Ge-on-insulator lateral p-i-n waveguide photodetectors for optical communication
We report high-performance lateral p-i-n Ge waveguide photodetectors (WGPDs) on a Ge-on-insulator (GOI) platform that could be integrated with electronic-photonic integrated circuits (EPICs) for communication applications. The high quality Ge layer affords a low absolute dark current. A tensile stra...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/145188 |
| _version_ | 1811682271678169088 |
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| author | Cheng, Chin-Yuan Tsai, Cheng-Hsun Yeh, Po-Lun Hung, Sheng-Feng Bao, Shuyu Lee, Kwang Hong Tan, Chuan Seng Chang, Guo-En |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Cheng, Chin-Yuan Tsai, Cheng-Hsun Yeh, Po-Lun Hung, Sheng-Feng Bao, Shuyu Lee, Kwang Hong Tan, Chuan Seng Chang, Guo-En |
| author_sort | Cheng, Chin-Yuan |
| collection | NTU |
| description | We report high-performance lateral p-i-n Ge waveguide photodetectors (WGPDs) on a Ge-on-insulator (GOI) platform that could be integrated with electronic-photonic integrated circuits (EPICs) for communication applications. The high quality Ge layer affords a low absolute dark current. A tensile strain of 0.144% in the Ge active layers narrows the direct bandgap to enable efficient photodetection over the entire range of C- and L bands. The low-index insulator layer enhances optical confinement, resulting in a good optical responsivity. These results demonstrate the feasibility of planar Ge WGPDs for monolithic GOI-based EPICs. |
| first_indexed | 2024-10-01T03:54:11Z |
| format | Journal Article |
| id | ntu-10356/145188 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:54:11Z |
| publishDate | 2020 |
| record_format | dspace |
| spelling | ntu-10356/1451882020-12-15T02:03:54Z Ge-on-insulator lateral p-i-n waveguide photodetectors for optical communication Cheng, Chin-Yuan Tsai, Cheng-Hsun Yeh, Po-Lun Hung, Sheng-Feng Bao, Shuyu Lee, Kwang Hong Tan, Chuan Seng Chang, Guo-En School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering::Semiconductors Germanium Photodetector We report high-performance lateral p-i-n Ge waveguide photodetectors (WGPDs) on a Ge-on-insulator (GOI) platform that could be integrated with electronic-photonic integrated circuits (EPICs) for communication applications. The high quality Ge layer affords a low absolute dark current. A tensile strain of 0.144% in the Ge active layers narrows the direct bandgap to enable efficient photodetection over the entire range of C- and L bands. The low-index insulator layer enhances optical confinement, resulting in a good optical responsivity. These results demonstrate the feasibility of planar Ge WGPDs for monolithic GOI-based EPICs. National Research Foundation (NRF) Accepted version This work was support by the National Research Foundation Singapore Competitive Research Programme under Grant NRF–CRP19–2017–01. 2020-12-15T02:03:54Z 2020-12-15T02:03:54Z 2020 Journal Article Cheng, C.-Y., Tsai, C.-H., Yeh, P.-L., Hung, S.-F., Bao, S., Lee, K. H., ... Chang, G.-E. (2020). Ge-on-insulator lateral p-i-n waveguide photodetectors for optical communication. Optics Letters, 45(24), 6683-6686. doi:10.1364/OL.409842 0146-9592 https://hdl.handle.net/10356/145188 10.1364/OL.409842 24 45 6683 6686 en Optics Letters © 2020 Optical Society of America (OSA). All rights reserved. This paper was published in Optics Letters and is made available with permission of Optical Society of America (OSA). application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering::Semiconductors Germanium Photodetector Cheng, Chin-Yuan Tsai, Cheng-Hsun Yeh, Po-Lun Hung, Sheng-Feng Bao, Shuyu Lee, Kwang Hong Tan, Chuan Seng Chang, Guo-En Ge-on-insulator lateral p-i-n waveguide photodetectors for optical communication |
| title | Ge-on-insulator lateral p-i-n waveguide photodetectors for optical communication |
| title_full | Ge-on-insulator lateral p-i-n waveguide photodetectors for optical communication |
| title_fullStr | Ge-on-insulator lateral p-i-n waveguide photodetectors for optical communication |
| title_full_unstemmed | Ge-on-insulator lateral p-i-n waveguide photodetectors for optical communication |
| title_short | Ge-on-insulator lateral p-i-n waveguide photodetectors for optical communication |
| title_sort | ge on insulator lateral p i n waveguide photodetectors for optical communication |
| topic | Engineering::Electrical and electronic engineering::Semiconductors Germanium Photodetector |
| url | https://hdl.handle.net/10356/145188 |
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