Fabrication of vertical side-wall submicron emitter for heterojunction bipolar transistors
In this investigation, several dry etching processes have been systematically studied for submicron emitter formation for metamorphic heterojunction bipolar transistor (MHBT) devices. CH4/H2/O2 chemistry is shown to offer better side wall etch profile and smoother surface compared to other gas mixtu...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Research Report |
| Language: | English |
| Published: |
2008
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| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/14525 |
| _version_ | 1826113686705537024 |
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| author | Radhakrishnan, K. Wang, Hong |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Radhakrishnan, K. Wang, Hong |
| author_sort | Radhakrishnan, K. |
| collection | NTU |
| description | In this investigation, several dry etching processes have been systematically studied for submicron emitter formation for metamorphic heterojunction bipolar transistor (MHBT) devices. CH4/H2/O2 chemistry is shown to offer better side wall etch profile and smoother surface compared to other gas mixtures. Optimized HBT emitter etching process is developed by combining the plasma dry etching and the wet etching techniques. Submicron sized (0.6 μm × 20 μm) emitters have been demonstrated using direct electron beam lithography. RF performance of the MHBT devices (1.0×20 μm2) fabricated using the new dry-wet etch combination demonstrates fT and fMAX values of 92 GHz and 122 GHz, respectively. These values are higher than HBTs fabricated using all-wet-etch process. |
| first_indexed | 2024-10-01T03:27:17Z |
| format | Research Report |
| id | ntu-10356/14525 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:27:17Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | ntu-10356/145252023-03-04T03:20:12Z Fabrication of vertical side-wall submicron emitter for heterojunction bipolar transistors Radhakrishnan, K. Wang, Hong School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits In this investigation, several dry etching processes have been systematically studied for submicron emitter formation for metamorphic heterojunction bipolar transistor (MHBT) devices. CH4/H2/O2 chemistry is shown to offer better side wall etch profile and smoother surface compared to other gas mixtures. Optimized HBT emitter etching process is developed by combining the plasma dry etching and the wet etching techniques. Submicron sized (0.6 μm × 20 μm) emitters have been demonstrated using direct electron beam lithography. RF performance of the MHBT devices (1.0×20 μm2) fabricated using the new dry-wet etch combination demonstrates fT and fMAX values of 92 GHz and 122 GHz, respectively. These values are higher than HBTs fabricated using all-wet-etch process. 2008-11-27T01:43:44Z 2008-11-27T01:43:44Z 2007 2007 Research Report http://hdl.handle.net/10356/14525 en 51 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits Radhakrishnan, K. Wang, Hong Fabrication of vertical side-wall submicron emitter for heterojunction bipolar transistors |
| title | Fabrication of vertical side-wall submicron emitter for heterojunction bipolar transistors |
| title_full | Fabrication of vertical side-wall submicron emitter for heterojunction bipolar transistors |
| title_fullStr | Fabrication of vertical side-wall submicron emitter for heterojunction bipolar transistors |
| title_full_unstemmed | Fabrication of vertical side-wall submicron emitter for heterojunction bipolar transistors |
| title_short | Fabrication of vertical side-wall submicron emitter for heterojunction bipolar transistors |
| title_sort | fabrication of vertical side wall submicron emitter for heterojunction bipolar transistors |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits |
| url | http://hdl.handle.net/10356/14525 |
| work_keys_str_mv | AT radhakrishnank fabricationofverticalsidewallsubmicronemitterforheterojunctionbipolartransistors AT wanghong fabricationofverticalsidewallsubmicronemitterforheterojunctionbipolartransistors |