Temperature-dependent phase noise properties of a two-section GaSb-based mode-locked laser emitting at 2 μm

Temperature-dependent phase noise properties of a two-section GaSb-based mode-locked laser emitting at 2 μm

The temperature-dependent phase noise properties of a monolithic two-section mode-locked semiconductor laser are first investigated. This is performed on a GaSb-based quantum well laser emitting at ∼2 μm. Stable mode locking operation with a fundamental repetition frequency of ∼13.3 GHz is achieved...

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Detalles Bibliográficos
Main Authors: Li, Xiang, Wang, Hong, Qiao, Zhongliang, Sia, Brian Jia Xu, Wang, Wanjun, Guo, Xin, Zhang, Yu, Niu, Zhichuan, Tong, Cunzhu, Liu, Chongyang
Outros autores: School of Electrical and Electronic Engineering
Formato: Journal Article
Idioma:English
Publicado: 2021
Subjects:
Engineering::Electrical and electronic engineering
Phase Noise
Temperature Dependent
Acceso en liña:https://hdl.handle.net/10356/145696

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