Recent advances in organic‐based materials for resistive memory applications
With the rapid development of data‐driven human interaction, advanced data‐storage technologies with lower power consumption, larger storage capacity, faster switching speed, and higher integration density have become the goals of future memory electronics. Nevertheless, the physical limitations of...
Main Authors: | Li, Yang, Qian, Qingyun, Zhu, Xiaolin, Li, Yujia, Zhang, Mayue, Li, Jingni, Ma, Chunlan, Li, Hua, Lu, Jianmei, Zhang, Qichun |
---|---|
Other Authors: | School of Materials Science and Engineering |
Format: | Journal Article |
Language: | English |
Published: |
2021
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/146085 |
Similar Items
-
Recent advances in organic‐based materials for resistive memory applications
by: Yang Li, et al.
Published: (2020-11-01) -
Highly robust organometallic small-molecule-based nonvolatile resistive memory controlled by a redox-gated switching mechanism
by: Li, Yang, et al.
Published: (2021) -
Emerging Robust Polymer Materials for High-Performance Two-Terminal Resistive Switching Memory
by: Bixin Li, et al.
Published: (2023-11-01) -
Recent Advances in In-Memory Computing: Exploring Memristor and Memtransistor Arrays with 2D Materials
by: Hangbo Zhou, et al.
Published: (2024-02-01) -
Metal–Organic Frameworks–Based Memristors: Materials, Devices, and Applications
by: Fan Shu, et al.
Published: (2022-12-01)