Stable mode-locked operation with high temperature characteristics of a two-section InGaAs/GaAs double quantum wells laser
A monolithic two-section InGaAs/GaAs double quantum wells (DQWs) mode-locked laser (MLL) emitting at 1.06~\mu \text{m} is demonstrated. Stable mode locking operation is achieved up to 80 °C. The fundamental repetition rate is at 9.51 GHz with a signal-to-noise ratio (SNR) of more than 55 dB, and up...
| Autores principales: | , , , , , , , , , , , |
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| Formato: | Journal Article |
| Lenguaje: | English |
| Publicado: |
2021
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| Acceso en línea: | https://hdl.handle.net/10356/146659 |
| _version_ | 1826117234871762944 |
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| author | Qiao, Zhongliang Li, Xiang Sia, Jia Xubrian Wang, Wanjun Wang, Hong Li, Lin Li, Zaijin Zhao, Zhibin Qu, Yi Gao, Xin Bo, Baoxue Liu, Chongyang |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Qiao, Zhongliang Li, Xiang Sia, Jia Xubrian Wang, Wanjun Wang, Hong Li, Lin Li, Zaijin Zhao, Zhibin Qu, Yi Gao, Xin Bo, Baoxue Liu, Chongyang |
| author_sort | Qiao, Zhongliang |
| collection | NTU |
| description | A monolithic two-section InGaAs/GaAs double quantum wells (DQWs) mode-locked laser (MLL) emitting at 1.06~\mu \text{m} is demonstrated. Stable mode locking operation is achieved up to 80 °C. The fundamental repetition rate is at 9.51 GHz with a signal-to-noise ratio (SNR) of more than 55 dB, and up to the fourth harmonic at 38.04 GHz is observed. The characteristic temperature ( T_{0} ) of the laser and the influences of absorber bias voltage on T_{0} have been systematically investigated. From our findings, T_{0} shows a two-segment feature, and is slightly affected by the absorber bias voltage for photon saturation. |
| first_indexed | 2024-10-01T04:24:17Z |
| format | Journal Article |
| id | ntu-10356/146659 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:24:17Z |
| publishDate | 2021 |
| record_format | dspace |
| spelling | ntu-10356/1466592021-03-04T06:18:43Z Stable mode-locked operation with high temperature characteristics of a two-section InGaAs/GaAs double quantum wells laser Qiao, Zhongliang Li, Xiang Sia, Jia Xubrian Wang, Wanjun Wang, Hong Li, Lin Li, Zaijin Zhao, Zhibin Qu, Yi Gao, Xin Bo, Baoxue Liu, Chongyang School of Electrical and Electronic Engineering Temasek Laboratories @ NTU Engineering::Electrical and electronic engineering Semiconductor Lasers Quantum Well Lasers A monolithic two-section InGaAs/GaAs double quantum wells (DQWs) mode-locked laser (MLL) emitting at 1.06~\mu \text{m} is demonstrated. Stable mode locking operation is achieved up to 80 °C. The fundamental repetition rate is at 9.51 GHz with a signal-to-noise ratio (SNR) of more than 55 dB, and up to the fourth harmonic at 38.04 GHz is observed. The characteristic temperature ( T_{0} ) of the laser and the influences of absorber bias voltage on T_{0} have been systematically investigated. From our findings, T_{0} shows a two-segment feature, and is slightly affected by the absorber bias voltage for photon saturation. National Research Foundation (NRF) Published version This work was supported in part by Finance science and technology project of Hainan Province under Grant ZDYF2020036, in part by the National Natural Science Foundation of China under Grant 61964007, Grant 61774024, Grant 61864002, and Grant 62064004; in part by the Hainan Provincial Natural Science Foundation of China under Grant 2018CXTD336; in part by the National Research Foundation of Singapore under Grant NRF-CRP12-2013-04; in part by the National Key Research and Development Project under Grant 2017YFB0405100; in part by the Jilin Province Science and Technology Development Plan under Grant 20190302007GX; and in part by the Young Talents Science and Technology Innovation Project of Hainan Association for Science and Technology under Grant QCXM201810. 2021-03-04T06:18:43Z 2021-03-04T06:18:43Z 2021 Journal Article Qiao, Z., Li, X., Sia, J. X., Wang, W., Wang, H., Li, L., . . . Liu, C. (2021). Stable mode-locked operation with high temperature characteristics of a two-section InGaAs/GaAs double quantum wells laser. IEEE Access, 9, 16608-16614. doi:10.1109/ACCESS.2021.3051179 2169-3536 0000-0002-3923-4029 0000-0003-4494-8293 0000-0002-2183-6865 0000-0001-8045-2944 https://hdl.handle.net/10356/146659 10.1109/ACCESS.2021.3051179 2-s2.0-85099594751 9 16608 16614 en IEEE Access © 2021 IEEE. This journal is 100% open access, which means that all content is freely available without charge to users or their institutions. All articles accepted after 12 June 2019 are published under a CC BY 4.0 license, and the author retains copyright. Users are allowed to read, download, copy, distribute, print, search, or link to the full texts of the articles, or use them for any other lawful purpose, as long as proper attribution is given. application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering Semiconductor Lasers Quantum Well Lasers Qiao, Zhongliang Li, Xiang Sia, Jia Xubrian Wang, Wanjun Wang, Hong Li, Lin Li, Zaijin Zhao, Zhibin Qu, Yi Gao, Xin Bo, Baoxue Liu, Chongyang Stable mode-locked operation with high temperature characteristics of a two-section InGaAs/GaAs double quantum wells laser |
| title | Stable mode-locked operation with high temperature characteristics of a two-section InGaAs/GaAs double quantum wells laser |
| title_full | Stable mode-locked operation with high temperature characteristics of a two-section InGaAs/GaAs double quantum wells laser |
| title_fullStr | Stable mode-locked operation with high temperature characteristics of a two-section InGaAs/GaAs double quantum wells laser |
| title_full_unstemmed | Stable mode-locked operation with high temperature characteristics of a two-section InGaAs/GaAs double quantum wells laser |
| title_short | Stable mode-locked operation with high temperature characteristics of a two-section InGaAs/GaAs double quantum wells laser |
| title_sort | stable mode locked operation with high temperature characteristics of a two section ingaas gaas double quantum wells laser |
| topic | Engineering::Electrical and electronic engineering Semiconductor Lasers Quantum Well Lasers |
| url | https://hdl.handle.net/10356/146659 |
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