Stable mode-locked operation with high temperature characteristics of a two-section InGaAs/GaAs double quantum wells laser
A monolithic two-section InGaAs/GaAs double quantum wells (DQWs) mode-locked laser (MLL) emitting at 1.06~\mu \text{m} is demonstrated. Stable mode locking operation is achieved up to 80 °C. The fundamental repetition rate is at 9.51 GHz with a signal-to-noise ratio (SNR) of more than 55 dB, and up...
Main Authors: | Qiao, Zhongliang, Li, Xiang, Sia, Jia Xubrian, Wang, Wanjun, Wang, Hong, Li, Lin, Li, Zaijin, Zhao, Zhibin, Qu, Yi, Gao, Xin, Bo, Baoxue, Liu, Chongyang |
---|---|
Other Authors: | School of Electrical and Electronic Engineering |
Format: | Journal Article |
Language: | English |
Published: |
2021
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/146659 |
Similar Items
-
Stable Mode-Locked Operation With High Temperature Characteristics of a Two-Section InGaAs/GaAs Double Quantum Wells Laser
by: Zhongliang Qiao, et al.
Published: (2021-01-01) -
Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide
by: Qiao, Zhongliang, et al.
Published: (2022) -
Tunable Characteristics of Optical Frequency Combs from InGaAs/GaAs Two-Section Mode-Locked Lasers
by: Dengqun Weng, et al.
Published: (2024-12-01) -
Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy DisorderingQuantum Well Intermixing
by: Qiao, Zhongliang, et al.
Published: (2017) -
Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy Disordering Quantum Well Intermixing
by: Zhongliang Qiao, et al.
Published: (2017-01-01)