Van der Waals engineering of ferroelectric heterostructures for long-retention memory

Van der Waals engineering of ferroelectric heterostructures for long-retention memory

The limited memory retention for a ferroelectric field-effect transistor has prevented the commercialization of its nonvolatile memory potential using the commercially available ferroelectrics. Here, we show a long-retention ferroelectric transistor memory cell featuring a metal-ferroelectric-metal-...

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Bibliographic Details
Main Authors: Wang, Xiaowei, Zhu, Chao, Deng, Ya, Duan, Ruihuan, Chen, Jieqiong, Zeng, Qingsheng, Zhou, Jiadong, Fu, Qundong, You, Lu, Liu, Song, Edgar, James H., Yu, Peng, Liu, Zheng
Other Authors: School of Materials Science and Engineering
Format: Journal Article
Language:English
Published: 2021
Subjects:
Engineering::Materials
Electronic Devices
Information Storage
Online Access:https://hdl.handle.net/10356/146740

Internet

https://hdl.handle.net/10356/146740

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