Monolithic Germanium-tin pedestal waveguide for mid-infrared applications
Germanium-tin (GeSn) is a CMOS-compatible group-IV material. Its growth, however, is plagued by the tendency of Sn segregation and the generation of defects within the GeSn layer when it is grown on the lattice-mismatched substrate. Thus far, thin GeSn has been reported for use in a direct-band gap...
| Main Authors: | , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2021
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| Online Access: | https://hdl.handle.net/10356/146749 |
| _version_ | 1811689882711490560 |
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| author | Goh, Simon Chun Kiat Shiau, Li Lynn Zhang, Lin Son, Bongkwon Chen, Qimiao Zhong, Jian Salim, Teddy Tan, Chuan Seng |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Goh, Simon Chun Kiat Shiau, Li Lynn Zhang, Lin Son, Bongkwon Chen, Qimiao Zhong, Jian Salim, Teddy Tan, Chuan Seng |
| author_sort | Goh, Simon Chun Kiat |
| collection | NTU |
| description | Germanium-tin (GeSn) is a CMOS-compatible group-IV material. Its growth, however, is plagued by the tendency of Sn segregation and the generation of defects within the GeSn layer when it is grown on the lattice-mismatched substrate. Thus far, thin GeSn has been reported for use in a direct-band gap for near-mid infrared light source and photodetector. In this communication, we report the growth of high quality single-crystalline GeSn (∼ 1 μm) with low compressive stress (−0.3%) and low defects (3 × 10 7 /cm 2 ) on Ge buffer on Si substrate. The as-grown GeSn is then fabricated into pedestal waveguide of width 1.25 μm. An estimated propagation loss of 1.81 dB/cm and bending loss of 0.19 dB/ bend are measured at 3.74 μm. In the absence of Ge-O absorption peaks at 820 and 550 cm −1 , under optimal fabrication and measurement condition, the proposed GeSn waveguide might possibly support light propagation for wavelength beyond 25 μm. |
| first_indexed | 2024-10-01T05:55:10Z |
| format | Journal Article |
| id | ntu-10356/146749 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:55:10Z |
| publishDate | 2021 |
| record_format | dspace |
| spelling | ntu-10356/1467492021-03-09T06:23:00Z Monolithic Germanium-tin pedestal waveguide for mid-infrared applications Goh, Simon Chun Kiat Shiau, Li Lynn Zhang, Lin Son, Bongkwon Chen, Qimiao Zhong, Jian Salim, Teddy Tan, Chuan Seng School of Electrical and Electronic Engineering School of Materials Science and Engineering Temasek Laboratories @ NTU Engineering::Electrical and electronic engineering::Semiconductors Group IV Photonics Germanium-tin (GeSn) is a CMOS-compatible group-IV material. Its growth, however, is plagued by the tendency of Sn segregation and the generation of defects within the GeSn layer when it is grown on the lattice-mismatched substrate. Thus far, thin GeSn has been reported for use in a direct-band gap for near-mid infrared light source and photodetector. In this communication, we report the growth of high quality single-crystalline GeSn (∼ 1 μm) with low compressive stress (−0.3%) and low defects (3 × 10 7 /cm 2 ) on Ge buffer on Si substrate. The as-grown GeSn is then fabricated into pedestal waveguide of width 1.25 μm. An estimated propagation loss of 1.81 dB/cm and bending loss of 0.19 dB/ bend are measured at 3.74 μm. In the absence of Ge-O absorption peaks at 820 and 550 cm −1 , under optimal fabrication and measurement condition, the proposed GeSn waveguide might possibly support light propagation for wavelength beyond 25 μm. National Research Foundation (NRF) Published version This research project is supported by the National Research Foundation, Singapore, under its Competitive Research Program (CRP Award NRF-CRP19-2017-01). 2021-03-09T06:19:06Z 2021-03-09T06:19:06Z 2021 Journal Article Goh, S. C. K., Shiau, L. L., Zhang, L., Son, B., Chen, Q., Zhong, J., ... Tan, C. S. (2021). Monolithic Germanium-tin pedestal waveguide for mid-infrared applications. IEEE Photonics Journal, 13(2), 1-11. doi:10.1109/JPHOT.2021.3059452 1943-0655 https://hdl.handle.net/10356/146749 10.1109/JPHOT.2021.3059452 2-s2.0-85100934335 2 13 1 11 en IEEE Photonics Journal © 2021 IEEE. This journal is 100% open access, which means that all content is freely available without charge to users or their institutions. All articles accepted after 12 June 2019 are published under a CC BY 4.0 license, and the author retains copyright. Users are allowed to read, download, copy, distribute, print, search, or link to the full texts of the articles, or use them for any other lawful purpose, as long as proper attribution is given. application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering::Semiconductors Group IV Photonics Goh, Simon Chun Kiat Shiau, Li Lynn Zhang, Lin Son, Bongkwon Chen, Qimiao Zhong, Jian Salim, Teddy Tan, Chuan Seng Monolithic Germanium-tin pedestal waveguide for mid-infrared applications |
| title | Monolithic Germanium-tin pedestal waveguide for mid-infrared applications |
| title_full | Monolithic Germanium-tin pedestal waveguide for mid-infrared applications |
| title_fullStr | Monolithic Germanium-tin pedestal waveguide for mid-infrared applications |
| title_full_unstemmed | Monolithic Germanium-tin pedestal waveguide for mid-infrared applications |
| title_short | Monolithic Germanium-tin pedestal waveguide for mid-infrared applications |
| title_sort | monolithic germanium tin pedestal waveguide for mid infrared applications |
| topic | Engineering::Electrical and electronic engineering::Semiconductors Group IV Photonics |
| url | https://hdl.handle.net/10356/146749 |
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