Filamentary physics and modelling in redox-based resistive devices
As we are moving towards a more data-centric and energy-consuming world, there is an increasingly strong need to search for more efficient alternatives in computing memory. Resistive random access memory (RRAM) has been one of the most promising alternatives to existing memories due to its simple...
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| Format: | Thesis-Doctor of Philosophy |
| Language: | English |
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Nanyang Technological University
2021
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| Online Access: | https://hdl.handle.net/10356/147065 |
| _version_ | 1811679438730952704 |
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| author | Loy, Desmond Jia Jun |
| author2 | Lew Wen Siang |
| author_facet | Lew Wen Siang Loy, Desmond Jia Jun |
| author_sort | Loy, Desmond Jia Jun |
| collection | NTU |
| description | As we are moving towards a more data-centric and energy-consuming world, there is an
increasingly strong need to search for more efficient alternatives in computing memory.
Resistive random access memory (RRAM) has been one of the most promising alternatives to
existing memories due to its simple metal-insulator-metal (MIM) structure, high scalability, low
power, multi-bit characteristics and compatibility to complementary metal oxide semiconductor
(CMOS). An RRAM is made up of two metal electrodes sandwiching a dielectric layer and its
switching process is based on basic redox reactions of oxidation and reduction. Recently, there
have been studies ranging from the high-k materials such as HfOx to the lesser known lower-k
materials such as MgO. This work comprises of conduction mechanism physics, switching
dynamics multi-level resistance states, coupled with modelling for a better understanding and
prediction analysis studies for future 1T1R industrial applications. |
| first_indexed | 2024-10-01T03:09:10Z |
| format | Thesis-Doctor of Philosophy |
| id | ntu-10356/147065 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:09:10Z |
| publishDate | 2021 |
| publisher | Nanyang Technological University |
| record_format | dspace |
| spelling | ntu-10356/1470652023-02-28T23:35:10Z Filamentary physics and modelling in redox-based resistive devices Loy, Desmond Jia Jun Lew Wen Siang School of Physical and Mathematical Sciences WenSiang@ntu.edu.sg Science::Physics As we are moving towards a more data-centric and energy-consuming world, there is an increasingly strong need to search for more efficient alternatives in computing memory. Resistive random access memory (RRAM) has been one of the most promising alternatives to existing memories due to its simple metal-insulator-metal (MIM) structure, high scalability, low power, multi-bit characteristics and compatibility to complementary metal oxide semiconductor (CMOS). An RRAM is made up of two metal electrodes sandwiching a dielectric layer and its switching process is based on basic redox reactions of oxidation and reduction. Recently, there have been studies ranging from the high-k materials such as HfOx to the lesser known lower-k materials such as MgO. This work comprises of conduction mechanism physics, switching dynamics multi-level resistance states, coupled with modelling for a better understanding and prediction analysis studies for future 1T1R industrial applications. Doctor of Philosophy 2021-03-22T07:35:54Z 2021-03-22T07:35:54Z 2020 Thesis-Doctor of Philosophy Loy, D. J. J. (2020). Filamentary physics and modelling in redox-based resistive devices. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/147065 https://hdl.handle.net/10356/147065 10.32657/10356/147065 en This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License (CC BY-NC 4.0). application/pdf Nanyang Technological University |
| spellingShingle | Science::Physics Loy, Desmond Jia Jun Filamentary physics and modelling in redox-based resistive devices |
| title | Filamentary physics and modelling in redox-based resistive devices |
| title_full | Filamentary physics and modelling in redox-based resistive devices |
| title_fullStr | Filamentary physics and modelling in redox-based resistive devices |
| title_full_unstemmed | Filamentary physics and modelling in redox-based resistive devices |
| title_short | Filamentary physics and modelling in redox-based resistive devices |
| title_sort | filamentary physics and modelling in redox based resistive devices |
| topic | Science::Physics |
| url | https://hdl.handle.net/10356/147065 |
| work_keys_str_mv | AT loydesmondjiajun filamentaryphysicsandmodellinginredoxbasedresistivedevices |