SiN-SOI multilayer platform for prospective applications at 2 μm
Silicon photonics at the 2 μm waveband, specifically the 1.9 μm wavelength region is strategically imperative. This is due to its infrastructural compatibility (i.e., thulium-doped fiber amplifier, hollow-core photonic bandgap fiber) in enabling communications, as well as its potential to enable a w...
| Main Authors: | , , , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2021
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/147105 |
| _version_ | 1811684406254895104 |
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| author | Sia, Brian Jia Xu Wang, Wanjun Guo, Xin Zhou, Jin Zhang, Zecen Li, Xiang Qiao, Zhong Liang Liu, Chong Yang Littlejohns, Callum Reed, Graham T. Wang, Hong |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Sia, Brian Jia Xu Wang, Wanjun Guo, Xin Zhou, Jin Zhang, Zecen Li, Xiang Qiao, Zhong Liang Liu, Chong Yang Littlejohns, Callum Reed, Graham T. Wang, Hong |
| author_sort | Sia, Brian Jia Xu |
| collection | NTU |
| description | Silicon photonics at the 2 μm waveband, specifically the 1.9 μm wavelength region is strategically imperative. This is due to its infrastructural compatibility (i.e., thulium-doped fiber amplifier, hollow-core photonic bandgap fiber) in enabling communications, as well as its potential to enable a wide range of applications. While the conventional Silicon-on-Insulator platform permits passive/active functionalities, it requires stringent processing due to high-index contrast. On the other hand, SiN can serve to reduce waveguiding losses via its moderate-index contrast. In this work, by demonstrating SiN passives and Si-SiN interlayer coupler with favorable performance, we extend the Si-SiN platform to the 1.9 μm wavelength region. We report waveguide propagation loss of 2.32 dB/cm. Following, trends in radiation loss with regards to bending radius is analyzed. A high performance 3-dB power splitter with insertion loss and bandwidth of 0.05 dB and 55 nm (1935 - 1990 nm) respectively is introduced. Lastly, Si-SiN transition loss as low as 0.04 dB is demonstrated. |
| first_indexed | 2024-10-01T04:28:07Z |
| format | Journal Article |
| id | ntu-10356/147105 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:28:07Z |
| publishDate | 2021 |
| record_format | dspace |
| spelling | ntu-10356/1471052021-03-26T05:19:10Z SiN-SOI multilayer platform for prospective applications at 2 μm Sia, Brian Jia Xu Wang, Wanjun Guo, Xin Zhou, Jin Zhang, Zecen Li, Xiang Qiao, Zhong Liang Liu, Chong Yang Littlejohns, Callum Reed, Graham T. Wang, Hong School of Electrical and Electronic Engineering Centre for Micro-/Nano-electronics (NOVITAS) Silicon Technologies, Centre of Excellence Engineering::Electrical and electronic engineering Silicon Photonics 2 μm Waveband Silicon photonics at the 2 μm waveband, specifically the 1.9 μm wavelength region is strategically imperative. This is due to its infrastructural compatibility (i.e., thulium-doped fiber amplifier, hollow-core photonic bandgap fiber) in enabling communications, as well as its potential to enable a wide range of applications. While the conventional Silicon-on-Insulator platform permits passive/active functionalities, it requires stringent processing due to high-index contrast. On the other hand, SiN can serve to reduce waveguiding losses via its moderate-index contrast. In this work, by demonstrating SiN passives and Si-SiN interlayer coupler with favorable performance, we extend the Si-SiN platform to the 1.9 μm wavelength region. We report waveguide propagation loss of 2.32 dB/cm. Following, trends in radiation loss with regards to bending radius is analyzed. A high performance 3-dB power splitter with insertion loss and bandwidth of 0.05 dB and 55 nm (1935 - 1990 nm) respectively is introduced. Lastly, Si-SiN transition loss as low as 0.04 dB is demonstrated. Agency for Science, Technology and Research (A*STAR) Nanyang Technological University National Research Foundation (NRF) Published version This work was supported in part by the National Research Foundation Singapore under Grant NRF-CRP12-2013-04 and in part by Nanyang Technological University-A*Start Silicon Technologies Centre of Excellence and NTUCompoundTek Pte Ltd Research Collaboration Agreement (RCA). 2021-03-26T05:19:10Z 2021-03-26T05:19:10Z 2019 Journal Article Sia, B. J. X., Wang, W., Guo, X., Zhou, J., Zhang, Z., Li, X., Qiao, Z. L., Liu, C. Y., Littlejohns, C., Reed, G. T. & Wang, H. (2019). SiN-SOI multilayer platform for prospective applications at 2 μm. IEEE Photonics Journal, 11(6). https://dx.doi.org/10.1109/JPHOT.2019.2952603 1943-0655 0000-0002-2183-6865 0000-0001-8045-2944 0000-0002-7101-0447 https://hdl.handle.net/10356/147105 10.1109/JPHOT.2019.2952603 2-s2.0-85077220838 6 11 en NRF-CRP12-2013-04 IEEE Photonics Journal © 2019 IEEE. This journal is 100% open access, which means that all content is freely available without charge to users or their institutions. All articles accepted after 12 June 2019 are published under a CC BY 4.0 license, and the author retains copyright. Users are allowed to read, download, copy, distribute, print, search, or link to the full texts of the articles, or use them for any other lawful purpose, as long as proper attribution is given. application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering Silicon Photonics 2 μm Waveband Sia, Brian Jia Xu Wang, Wanjun Guo, Xin Zhou, Jin Zhang, Zecen Li, Xiang Qiao, Zhong Liang Liu, Chong Yang Littlejohns, Callum Reed, Graham T. Wang, Hong SiN-SOI multilayer platform for prospective applications at 2 μm |
| title | SiN-SOI multilayer platform for prospective applications at 2 μm |
| title_full | SiN-SOI multilayer platform for prospective applications at 2 μm |
| title_fullStr | SiN-SOI multilayer platform for prospective applications at 2 μm |
| title_full_unstemmed | SiN-SOI multilayer platform for prospective applications at 2 μm |
| title_short | SiN-SOI multilayer platform for prospective applications at 2 μm |
| title_sort | sin soi multilayer platform for prospective applications at 2 μm |
| topic | Engineering::Electrical and electronic engineering Silicon Photonics 2 μm Waveband |
| url | https://hdl.handle.net/10356/147105 |
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