Carbon nanotubes based memory devices
In this dissertation, CNTs based memory devices in particularly using CNTs as the electrode for RRAM have been studied. First, the metal electrode RRAM was focused. To have a better understanding of RRAM working mechanism and performance, metal electrode RRAM devices were fabricated and analyzed. Se...
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| Format: | Thesis-Master by Research |
| Language: | English |
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Nanyang Technological University
2021
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| Online Access: | https://hdl.handle.net/10356/147155 |
| _version_ | 1811679906897068032 |
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| author | Tan, Chee Khing |
| author2 | Zhang Qing |
| author_facet | Zhang Qing Tan, Chee Khing |
| author_sort | Tan, Chee Khing |
| collection | NTU |
| description | In this dissertation, CNTs based memory devices in particularly using CNTs as the electrode for RRAM have been studied. First, the metal electrode RRAM was focused. To have a better understanding of RRAM working mechanism and performance, metal electrode RRAM devices were fabricated and analyzed. Several metal oxides were used as the resistive switching material to achieve a better memory performance. Next, CNTs based RRAM devices were fabricated. Random network CNTs and aligned CNTs were synthesized to fabricate random network CNTs electrode RRAM and aligned CNTs electrode RRAM devices. The electrical characterization was performed to analyze the device performance. Lastly, a bi-layer resistive switching memory using aligned CNTs electrodes were developed. The devices showed several key advantages over the metal electrode RRAM devices where the devices established a forming-free process and low reset current down to 10nA. Furthermore, the devices exhibited lesser variation in term of the operating voltages. |
| first_indexed | 2024-10-01T03:16:36Z |
| format | Thesis-Master by Research |
| id | ntu-10356/147155 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:16:36Z |
| publishDate | 2021 |
| publisher | Nanyang Technological University |
| record_format | dspace |
| spelling | ntu-10356/1471552023-07-04T17:07:26Z Carbon nanotubes based memory devices Tan, Chee Khing Zhang Qing School of Electrical and Electronic Engineering eqzhang@ntu.edu.sg Engineering::Electrical and electronic engineering In this dissertation, CNTs based memory devices in particularly using CNTs as the electrode for RRAM have been studied. First, the metal electrode RRAM was focused. To have a better understanding of RRAM working mechanism and performance, metal electrode RRAM devices were fabricated and analyzed. Several metal oxides were used as the resistive switching material to achieve a better memory performance. Next, CNTs based RRAM devices were fabricated. Random network CNTs and aligned CNTs were synthesized to fabricate random network CNTs electrode RRAM and aligned CNTs electrode RRAM devices. The electrical characterization was performed to analyze the device performance. Lastly, a bi-layer resistive switching memory using aligned CNTs electrodes were developed. The devices showed several key advantages over the metal electrode RRAM devices where the devices established a forming-free process and low reset current down to 10nA. Furthermore, the devices exhibited lesser variation in term of the operating voltages. Master of Engineering 2021-03-24T08:01:50Z 2021-03-24T08:01:50Z 2021 Thesis-Master by Research Tan, C. K. (2021). Carbon nanotubes based memory devices. Master's thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/147155 https://hdl.handle.net/10356/147155 10.32657/10356/147155 en This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License (CC BY-NC 4.0). application/pdf Nanyang Technological University |
| spellingShingle | Engineering::Electrical and electronic engineering Tan, Chee Khing Carbon nanotubes based memory devices |
| title | Carbon nanotubes based memory devices |
| title_full | Carbon nanotubes based memory devices |
| title_fullStr | Carbon nanotubes based memory devices |
| title_full_unstemmed | Carbon nanotubes based memory devices |
| title_short | Carbon nanotubes based memory devices |
| title_sort | carbon nanotubes based memory devices |
| topic | Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/147155 |
| work_keys_str_mv | AT tancheekhing carbonnanotubesbasedmemorydevices |