Formation of 45◦ silicon (110) surface using Triton X-n surfactants in potassium hydroxide for infrared applications
Silicon (Si) micromirrors are an integral feature for many micro-optomechanical systems (MOEMS). Such mirrors are generally wet etched in alkaline solution at elevated temperature. For 90 beam steering applications, 45 slanted Si (110) plane is the prime choice fabricated with the incorporation of...
| Main Authors: | , , , |
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| Format: | Journal Article |
| Language: | English |
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2021
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| Online Access: | https://hdl.handle.net/10356/147326 |
| _version_ | 1826116360075214848 |
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| author | Goh, Simon Chun Kiat Guo, Tina Xin Chuan, KaiLiang Tan, Chuan Seng |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Goh, Simon Chun Kiat Guo, Tina Xin Chuan, KaiLiang Tan, Chuan Seng |
| author_sort | Goh, Simon Chun Kiat |
| collection | NTU |
| description | Silicon (Si) micromirrors are an integral feature for many micro-optomechanical systems (MOEMS). Such mirrors are generally wet etched in alkaline solution at elevated temperature. For 90 beam steering applications, 45 slanted Si (110) plane is the prime choice fabricated with the incorporation of tensioactive surfactants. Here, Triton-Si and Triton-hydroxide (OH )/H O interaction using varying hydrophilic chain length Triton (X-45, X-100 and X-405) were investigated. The surfactant concentration was varied from 0 to 1000 ppm in potassium hydroxide (KOH). Triton molecules were shown to adsorb preferentially on (110) than on (100) surface. Longer chain length Triton hampered OH access to Si surface resulting in slower etch rate. In contrast, contact angle measurement suggested that shorter Triton interfaced better with Si surface. Later, Si wafers etched in Triton 10 ppm - KOH were examined. The measured output for (110)X-45, (110)X-100, (110) and polished Si wafer reference (R < 5Å) mirrors were 0.58, 0.76, 0.72 and 1.25 mW, respectively. Subsequently, Si-SiO thin film in [HLHL] -substrate configuration was fabricated. Broadband micromirror for use in 3.0-5.5 μm spectrum range was experimentally realized with reflected efficiency of 73%. |
| first_indexed | 2024-10-01T04:10:06Z |
| format | Journal Article |
| id | ntu-10356/147326 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:10:06Z |
| publishDate | 2021 |
| record_format | dspace |
| spelling | ntu-10356/1473262021-03-31T03:54:28Z Formation of 45◦ silicon (110) surface using Triton X-n surfactants in potassium hydroxide for infrared applications Goh, Simon Chun Kiat Guo, Tina Xin Chuan, KaiLiang Tan, Chuan Seng School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering Triton X-n Silicon Micromirrors Silicon (Si) micromirrors are an integral feature for many micro-optomechanical systems (MOEMS). Such mirrors are generally wet etched in alkaline solution at elevated temperature. For 90 beam steering applications, 45 slanted Si (110) plane is the prime choice fabricated with the incorporation of tensioactive surfactants. Here, Triton-Si and Triton-hydroxide (OH )/H O interaction using varying hydrophilic chain length Triton (X-45, X-100 and X-405) were investigated. The surfactant concentration was varied from 0 to 1000 ppm in potassium hydroxide (KOH). Triton molecules were shown to adsorb preferentially on (110) than on (100) surface. Longer chain length Triton hampered OH access to Si surface resulting in slower etch rate. In contrast, contact angle measurement suggested that shorter Triton interfaced better with Si surface. Later, Si wafers etched in Triton 10 ppm - KOH were examined. The measured output for (110)X-45, (110)X-100, (110) and polished Si wafer reference (R < 5Å) mirrors were 0.58, 0.76, 0.72 and 1.25 mW, respectively. Subsequently, Si-SiO thin film in [HLHL] -substrate configuration was fabricated. Broadband micromirror for use in 3.0-5.5 μm spectrum range was experimentally realized with reflected efficiency of 73%. Economic Development Board (EDB) Published version SCKG is grateful for the Industrial Postgraduate Program (IPP) Scholarship awarded by the Economic Development Board (EDB). 2021-03-31T03:54:28Z 2021-03-31T03:54:28Z 2018 Journal Article Goh, S. C. K., Guo, T. X., Chuan, K. & Tan, C. S. (2018). Formation of 45◦ silicon (110) surface using Triton X-n surfactants in potassium hydroxide for infrared applications. ECS Journal of Solid State Science and Technology, 7(12), Q259-Q266. https://dx.doi.org/10.1149/2.0141812jss 2162-8769 0000-0002-6833-2920 0000-0003-1250-9165 https://hdl.handle.net/10356/147326 10.1149/2.0141812jss 2-s2.0-85083916713 12 7 Q259 Q266 en ECS Journal of Solid State Science and Technology © The Electrochemical Society, Inc. 2018. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in ECS Journal of Solid State Science and Technology, 7(12), Q259-Q266. application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering Triton X-n Silicon Micromirrors Goh, Simon Chun Kiat Guo, Tina Xin Chuan, KaiLiang Tan, Chuan Seng Formation of 45◦ silicon (110) surface using Triton X-n surfactants in potassium hydroxide for infrared applications |
| title | Formation of 45◦ silicon (110) surface using Triton X-n surfactants in potassium hydroxide for infrared applications |
| title_full | Formation of 45◦ silicon (110) surface using Triton X-n surfactants in potassium hydroxide for infrared applications |
| title_fullStr | Formation of 45◦ silicon (110) surface using Triton X-n surfactants in potassium hydroxide for infrared applications |
| title_full_unstemmed | Formation of 45◦ silicon (110) surface using Triton X-n surfactants in potassium hydroxide for infrared applications |
| title_short | Formation of 45◦ silicon (110) surface using Triton X-n surfactants in potassium hydroxide for infrared applications |
| title_sort | formation of 45◦ silicon 110 surface using triton x n surfactants in potassium hydroxide for infrared applications |
| topic | Engineering::Electrical and electronic engineering Triton X-n Silicon Micromirrors |
| url | https://hdl.handle.net/10356/147326 |
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