Analysis of compact silicon photonic hybrid ring external cavity (SHREC) wavelength-tunable laser diodes operating from 1881–1947 nm
The "2 mu m waveband", specifically the 1.9 mu m wavelength region, is playing an increasingly imperative role in photonics. Development into compact tunable light sources operating at the wavelength region can unlock numerous technological applications. Instances, while not exhaustive, in...
Main Authors: | , , , , , , , , , |
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Format: | Journal Article |
Language: | English |
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2021
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Online Access: | https://hdl.handle.net/10356/147386 |
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author | Sia, Brian Jia Xu Wang, Wanjun Qiao, Zhongliang Li, Xiang Guo, Tina Xin Zhou, Jin Littlejohns, Callum G. Liu, Chongyang Reed, Graham T. Wang, Hong |
author2 | School of Electrical and Electronic Engineering |
author_facet | School of Electrical and Electronic Engineering Sia, Brian Jia Xu Wang, Wanjun Qiao, Zhongliang Li, Xiang Guo, Tina Xin Zhou, Jin Littlejohns, Callum G. Liu, Chongyang Reed, Graham T. Wang, Hong |
author_sort | Sia, Brian Jia Xu |
collection | NTU |
description | The "2 mu m waveband", specifically the 1.9 mu m wavelength region, is playing an increasingly imperative role in photonics. Development into compact tunable light sources operating at the wavelength region can unlock numerous technological applications. Instances, while not exhaustive, include alleviating the capacity load in fiber communications, H2O spectroscopy, optical logic, signal processing as well as enabling the optical Kerr effect on silicon. Silicon photonics is a disruptive technology. Through mature silicon processing, recent developments suggest that silicon will emerge as the workhorse of integrated optics. While the realization of a monolithic light source has proved to be challenging, the hybrid/heterogenous Si platforms, consisting of silicon and III-V materials, has stepped to the fore. In this work, we present the study of Vernier-based hybrid silicon photonic wavelength-tunable lasers with an operating range of 1881-1947 nm (66 nm), subject to different coupling gaps (Gapmrr) between the silicon microring resonators (MRRs) and bus waveguide. Wavelength tuning functionality is enabled via the thermo-optic effect of MRRs. Gapmrr, being the smallest feature in the assemble, is highly influential to the characteristics of the SHREC. As such, trends in hybrid laser performance with respect to Gapmrr are measured and analyzed. Slope efficiency, laser output power and side-mode suppression ratio of 0.232 W/A, 28 mW and 42 dB respectively are obtained across the developed lasers. Through the design of the Vernier spectrum and Gapmrr, tuning of laser wavelength from 1881-1947 nm can be achieved by applying only 47.2 mW of thermal power to a single MRR. |
first_indexed | 2024-10-01T04:53:45Z |
format | Journal Article |
id | ntu-10356/147386 |
institution | Nanyang Technological University |
language | English |
last_indexed | 2024-10-01T04:53:45Z |
publishDate | 2021 |
record_format | dspace |
spelling | ntu-10356/1473862021-03-31T08:57:38Z Analysis of compact silicon photonic hybrid ring external cavity (SHREC) wavelength-tunable laser diodes operating from 1881–1947 nm Sia, Brian Jia Xu Wang, Wanjun Qiao, Zhongliang Li, Xiang Guo, Tina Xin Zhou, Jin Littlejohns, Callum G. Liu, Chongyang Reed, Graham T. Wang, Hong School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering Silicon Photonics Laser Tuning The "2 mu m waveband", specifically the 1.9 mu m wavelength region, is playing an increasingly imperative role in photonics. Development into compact tunable light sources operating at the wavelength region can unlock numerous technological applications. Instances, while not exhaustive, include alleviating the capacity load in fiber communications, H2O spectroscopy, optical logic, signal processing as well as enabling the optical Kerr effect on silicon. Silicon photonics is a disruptive technology. Through mature silicon processing, recent developments suggest that silicon will emerge as the workhorse of integrated optics. While the realization of a monolithic light source has proved to be challenging, the hybrid/heterogenous Si platforms, consisting of silicon and III-V materials, has stepped to the fore. In this work, we present the study of Vernier-based hybrid silicon photonic wavelength-tunable lasers with an operating range of 1881-1947 nm (66 nm), subject to different coupling gaps (Gapmrr) between the silicon microring resonators (MRRs) and bus waveguide. Wavelength tuning functionality is enabled via the thermo-optic effect of MRRs. Gapmrr, being the smallest feature in the assemble, is highly influential to the characteristics of the SHREC. As such, trends in hybrid laser performance with respect to Gapmrr are measured and analyzed. Slope efficiency, laser output power and side-mode suppression ratio of 0.232 W/A, 28 mW and 42 dB respectively are obtained across the developed lasers. Through the design of the Vernier spectrum and Gapmrr, tuning of laser wavelength from 1881-1947 nm can be achieved by applying only 47.2 mW of thermal power to a single MRR. 2021-03-31T08:47:16Z 2021-03-31T08:47:16Z 2020 Journal Article Sia, B. J. X., Wang, W., Qiao, Z., Li, X., Guo, T. X., Zhou, J., Littlejohns, C. G., Liu, C., Reed, G. T. & Wang, H. (2020). Analysis of compact silicon photonic hybrid ring external cavity (SHREC) wavelength-tunable laser diodes operating from 1881–1947 nm. IEEE Journal of Quantum Electronics, 56(6). https://dx.doi.org/10.1109/JQE.2020.3029964 1558-1713 https://hdl.handle.net/10356/147386 10.1109/JQE.2020.3029964 6 56 en IEEE Journal of Quantum Electronics © 2020 Institute of Electrical and Electronics Engineers (IEEE). All rights reserved. |
spellingShingle | Engineering::Electrical and electronic engineering Silicon Photonics Laser Tuning Sia, Brian Jia Xu Wang, Wanjun Qiao, Zhongliang Li, Xiang Guo, Tina Xin Zhou, Jin Littlejohns, Callum G. Liu, Chongyang Reed, Graham T. Wang, Hong Analysis of compact silicon photonic hybrid ring external cavity (SHREC) wavelength-tunable laser diodes operating from 1881–1947 nm |
title | Analysis of compact silicon photonic hybrid ring external cavity (SHREC) wavelength-tunable laser diodes operating from 1881–1947 nm |
title_full | Analysis of compact silicon photonic hybrid ring external cavity (SHREC) wavelength-tunable laser diodes operating from 1881–1947 nm |
title_fullStr | Analysis of compact silicon photonic hybrid ring external cavity (SHREC) wavelength-tunable laser diodes operating from 1881–1947 nm |
title_full_unstemmed | Analysis of compact silicon photonic hybrid ring external cavity (SHREC) wavelength-tunable laser diodes operating from 1881–1947 nm |
title_short | Analysis of compact silicon photonic hybrid ring external cavity (SHREC) wavelength-tunable laser diodes operating from 1881–1947 nm |
title_sort | analysis of compact silicon photonic hybrid ring external cavity shrec wavelength tunable laser diodes operating from 1881 1947 nm |
topic | Engineering::Electrical and electronic engineering Silicon Photonics Laser Tuning |
url | https://hdl.handle.net/10356/147386 |
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