Thermoelectric properties of CuIn1-x AxTe2 (A- Al, Sn, Sb and Bi)
Thermoelectric properties of CuIn1-xAxTe2 compounds whereby A is (Group III = Al, Group IV = Sn and Group V = Sb and Bi) with (x=0, 0.05 and 0.1) have been studied. We have synthesized the compounds through solid-state reaction followed by spark plasma sintering. The electrical and thermal proper...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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Nanyang Technological University
2021
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| Online Access: | https://hdl.handle.net/10356/147760 |
| _version_ | 1811677074106089472 |
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| author | Denish Kumar Ammamuthu |
| author2 | Kedar Hippalgaonkar |
| author_facet | Kedar Hippalgaonkar Denish Kumar Ammamuthu |
| author_sort | Denish Kumar Ammamuthu |
| collection | NTU |
| description | Thermoelectric properties of CuIn1-xAxTe2 compounds whereby A is (Group III = Al,
Group IV = Sn and Group V = Sb and Bi) with (x=0, 0.05 and 0.1) have been studied.
We have synthesized the compounds through solid-state reaction followed by spark
plasma sintering. The electrical and thermal properties were studied using ZEM-3 and
PPMS. We achieved the high power factor with Sb doping among the prepared
samples.
Though the power factor decreased with Al doping from group III (isovalent), the
thermal conductivity dramatically reduced due to precipitate at grain boundaries and
surface. The thermal conductivity decreased from to 5.6 W/mK to 2.8W/mK at 300K.
CuIn1-xSnxTe2 displays a reduction in electrical conductivity due to charge
compensation cause by Sn2+ and Sn4+ as it replaces the Indium. The reduction in
electrical properties leads to a lower power factor compared to the pristine compound.
Both CuIn1-xSbxTe2 and CuIn1-xBixTe2 displays an increase in carrier concentration by
introducing acceptors. This lead to higher electrical conductivity and high power
factor. CuIn0.95Sn0.05Te2 exhibits a power factor of 1.10 at 650 K, which is higher than
the power factor stated in the latest research paper on CuIn1-xGaxTe2. Further
optimization can increase the power factor and enhance the zT value. |
| first_indexed | 2024-10-01T02:31:35Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/147760 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:31:35Z |
| publishDate | 2021 |
| publisher | Nanyang Technological University |
| record_format | dspace |
| spelling | ntu-10356/1477602023-03-04T15:44:16Z Thermoelectric properties of CuIn1-x AxTe2 (A- Al, Sn, Sb and Bi) Denish Kumar Ammamuthu Kedar Hippalgaonkar School of Materials Science and Engineering Institute of Materials Research and Engineering (IMRE) kedar@ntu.edu.sg Engineering::Materials Thermoelectric properties of CuIn1-xAxTe2 compounds whereby A is (Group III = Al, Group IV = Sn and Group V = Sb and Bi) with (x=0, 0.05 and 0.1) have been studied. We have synthesized the compounds through solid-state reaction followed by spark plasma sintering. The electrical and thermal properties were studied using ZEM-3 and PPMS. We achieved the high power factor with Sb doping among the prepared samples. Though the power factor decreased with Al doping from group III (isovalent), the thermal conductivity dramatically reduced due to precipitate at grain boundaries and surface. The thermal conductivity decreased from to 5.6 W/mK to 2.8W/mK at 300K. CuIn1-xSnxTe2 displays a reduction in electrical conductivity due to charge compensation cause by Sn2+ and Sn4+ as it replaces the Indium. The reduction in electrical properties leads to a lower power factor compared to the pristine compound. Both CuIn1-xSbxTe2 and CuIn1-xBixTe2 displays an increase in carrier concentration by introducing acceptors. This lead to higher electrical conductivity and high power factor. CuIn0.95Sn0.05Te2 exhibits a power factor of 1.10 at 650 K, which is higher than the power factor stated in the latest research paper on CuIn1-xGaxTe2. Further optimization can increase the power factor and enhance the zT value. Bachelor of Engineering (Materials Engineering) 2021-04-13T05:05:25Z 2021-04-13T05:05:25Z 2021 Final Year Project (FYP) Denish Kumar Ammamuthu (2021). Thermoelectric properties of CuIn1-x AxTe2 (A- Al, Sn, Sb and Bi). Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/147760 https://hdl.handle.net/10356/147760 en application/pdf Nanyang Technological University |
| spellingShingle | Engineering::Materials Denish Kumar Ammamuthu Thermoelectric properties of CuIn1-x AxTe2 (A- Al, Sn, Sb and Bi) |
| title | Thermoelectric properties of CuIn1-x AxTe2 (A- Al, Sn, Sb and Bi) |
| title_full | Thermoelectric properties of CuIn1-x AxTe2 (A- Al, Sn, Sb and Bi) |
| title_fullStr | Thermoelectric properties of CuIn1-x AxTe2 (A- Al, Sn, Sb and Bi) |
| title_full_unstemmed | Thermoelectric properties of CuIn1-x AxTe2 (A- Al, Sn, Sb and Bi) |
| title_short | Thermoelectric properties of CuIn1-x AxTe2 (A- Al, Sn, Sb and Bi) |
| title_sort | thermoelectric properties of cuin1 x axte2 a al sn sb and bi |
| topic | Engineering::Materials |
| url | https://hdl.handle.net/10356/147760 |
| work_keys_str_mv | AT denishkumarammamuthu thermoelectricpropertiesofcuin1xaxte2aalsnsbandbi |