Substrate engineering for CVD growth of single crystal graphene
Single crystal graphene (SCG) has attracted enormous attention for its unique potential for next‐generation high‐performance optoelectronics. In the absence of grain boundaries, the exceptional intrinsic properties of graphene are preserved by SCG. Currently, chemical vapor deposition (CVD) has been...
| Main Authors: | , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2021
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| Online Access: | https://hdl.handle.net/10356/147811 |
| _version_ | 1824455694706802688 |
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| author | Huang, Ming Deng, Bangwei Dong, Fan Zhang, Lili Zhang, Zheye Chen, Peng |
| author2 | School of Chemical and Biomedical Engineering |
| author_facet | School of Chemical and Biomedical Engineering Huang, Ming Deng, Bangwei Dong, Fan Zhang, Lili Zhang, Zheye Chen, Peng |
| author_sort | Huang, Ming |
| collection | NTU |
| description | Single crystal graphene (SCG) has attracted enormous attention for its unique potential for next‐generation high‐performance optoelectronics. In the absence of grain boundaries, the exceptional intrinsic properties of graphene are preserved by SCG. Currently, chemical vapor deposition (CVD) has been recognized as an effective method for the large‐scale synthesis of graphene films. However, polycrystalline films are usually obtained and the present grain boundaries compromise the carrier mobility, thermal conductivity, optical properties, and mechanical properties. The scalable and controllable synthesis of SCG is challenging. Recently, much attention has been attracted by the engineering of large‐size single‐crystal substrates for the epitaxial CVD growth of large‐area and high‐quality SCG films. In this article, a comprehensive and comparative review is provided on the selection and preparation of various single‐crystal substrates for CVD growth of SCG under different conditions. The growth mechanisms, current challenges, and future development and perspectives are discussed. |
| first_indexed | 2025-02-19T03:42:17Z |
| format | Journal Article |
| id | ntu-10356/147811 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2025-02-19T03:42:17Z |
| publishDate | 2021 |
| record_format | dspace |
| spelling | ntu-10356/1478112023-11-20T03:00:25Z Substrate engineering for CVD growth of single crystal graphene Huang, Ming Deng, Bangwei Dong, Fan Zhang, Lili Zhang, Zheye Chen, Peng School of Chemical and Biomedical Engineering Science::Chemistry::Crystallography::Crystal structure and growth Science::Chemistry::Inorganic chemistry::Metals Substrate Engineering Single Crystal Graphene Single crystal graphene (SCG) has attracted enormous attention for its unique potential for next‐generation high‐performance optoelectronics. In the absence of grain boundaries, the exceptional intrinsic properties of graphene are preserved by SCG. Currently, chemical vapor deposition (CVD) has been recognized as an effective method for the large‐scale synthesis of graphene films. However, polycrystalline films are usually obtained and the present grain boundaries compromise the carrier mobility, thermal conductivity, optical properties, and mechanical properties. The scalable and controllable synthesis of SCG is challenging. Recently, much attention has been attracted by the engineering of large‐size single‐crystal substrates for the epitaxial CVD growth of large‐area and high‐quality SCG films. In this article, a comprehensive and comparative review is provided on the selection and preparation of various single‐crystal substrates for CVD growth of SCG under different conditions. The growth mechanisms, current challenges, and future development and perspectives are discussed. Agency for Science, Technology and Research (A*STAR) Ministry of Education (MOE) This work was supported by an AME-IRG grant (AMEIRG18-0016) from Agency for Science, Technology and Research (A*STAR) of Singapore, an AcRF tier 2 grant (MOE2017-T2-2-005) from Ministry of Education (Singapore), the National Natural Science Foundation of China (21822601), the Fundamental Research Funds for the Central Universities (ZYGX2019Z021), and the 111 Project (B20030). 2021-06-04T02:28:53Z 2021-06-04T02:28:53Z 2021 Journal Article Huang, M., Deng, B., Dong, F., Zhang, L., Zhang, Z. & Chen, P. (2021). Substrate engineering for CVD growth of single crystal graphene. Small Methods, 5(5), 2001213-. https://dx.doi.org/10.1002/smtd.202001213 2366-9608 https://hdl.handle.net/10356/147811 10.1002/smtd.202001213 5 5 2001213 en AMEIRG18-0016 MOE2017-T2-2-005 21822601 ZYGX2019Z021 B20030 Small Methods 10.21979/N9/BCB919 © 2021 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. All rights reserved. |
| spellingShingle | Science::Chemistry::Crystallography::Crystal structure and growth Science::Chemistry::Inorganic chemistry::Metals Substrate Engineering Single Crystal Graphene Huang, Ming Deng, Bangwei Dong, Fan Zhang, Lili Zhang, Zheye Chen, Peng Substrate engineering for CVD growth of single crystal graphene |
| title | Substrate engineering for CVD growth of single crystal graphene |
| title_full | Substrate engineering for CVD growth of single crystal graphene |
| title_fullStr | Substrate engineering for CVD growth of single crystal graphene |
| title_full_unstemmed | Substrate engineering for CVD growth of single crystal graphene |
| title_short | Substrate engineering for CVD growth of single crystal graphene |
| title_sort | substrate engineering for cvd growth of single crystal graphene |
| topic | Science::Chemistry::Crystallography::Crystal structure and growth Science::Chemistry::Inorganic chemistry::Metals Substrate Engineering Single Crystal Graphene |
| url | https://hdl.handle.net/10356/147811 |
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