Effects of high-temperature thermal annealing on GeSn thin-film material and photodetector operating at 2 µm
Here, we explore the thermal stability of GeSn epilayers with varying Sn contents (3-10%) at an annealing temperature ranging from 300 to 750°C. It is found that ordered nanopatterns are formed on the surface of GeSn with Sn content of 8% without excessive Sn precipitation after thermal annealing at...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2021
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/147836 |
| _version_ | 1826130054393888768 |
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| author | Wu, Shaoteng Son, Bongkwon Zhang, Lin Chen, Qimiao Zhou, Hao Goh, Simon Chun Kiat Tan, Chuan Seng |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Wu, Shaoteng Son, Bongkwon Zhang, Lin Chen, Qimiao Zhou, Hao Goh, Simon Chun Kiat Tan, Chuan Seng |
| author_sort | Wu, Shaoteng |
| collection | NTU |
| description | Here, we explore the thermal stability of GeSn epilayers with varying Sn contents (3-10%) at an annealing temperature ranging from 300 to 750°C. It is found that ordered nanopatterns are formed on the surface of GeSn with Sn content of 8% without excessive Sn precipitation after thermal annealing at 700°C. Despite being annealed at high temperatures, the GeSn maintains its crystal structure, which is confirmed by the X-ray Diffraction (XRD), Raman spectrum, and secondary-ion mass spectrometry (SIMS). The corresponding photocurrents of the photodetectors at the wavelength of 2 µm also indicate the crystal quality of the GeSn alloys does not deteriorate significantly after high-temperature annealing (675-700°C). Meanwhile, the decrease of dark current with the enhancement of Ip/Id ratio (on-off ratio) indicates the improvement of detectivity of the photodetector due to the annealing process. Furthermore, the annealing temperature is optimized to 550°C to achieve 200% enhancement of photocurrents of the GeSn photodetectors operated at 2 µm. |
| first_indexed | 2024-10-01T07:50:36Z |
| format | Journal Article |
| id | ntu-10356/147836 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:50:36Z |
| publishDate | 2021 |
| record_format | dspace |
| spelling | ntu-10356/1478362021-04-13T01:07:46Z Effects of high-temperature thermal annealing on GeSn thin-film material and photodetector operating at 2 µm Wu, Shaoteng Son, Bongkwon Zhang, Lin Chen, Qimiao Zhou, Hao Goh, Simon Chun Kiat Tan, Chuan Seng School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering::Semiconductors Germanium-Tin Photodetector Here, we explore the thermal stability of GeSn epilayers with varying Sn contents (3-10%) at an annealing temperature ranging from 300 to 750°C. It is found that ordered nanopatterns are formed on the surface of GeSn with Sn content of 8% without excessive Sn precipitation after thermal annealing at 700°C. Despite being annealed at high temperatures, the GeSn maintains its crystal structure, which is confirmed by the X-ray Diffraction (XRD), Raman spectrum, and secondary-ion mass spectrometry (SIMS). The corresponding photocurrents of the photodetectors at the wavelength of 2 µm also indicate the crystal quality of the GeSn alloys does not deteriorate significantly after high-temperature annealing (675-700°C). Meanwhile, the decrease of dark current with the enhancement of Ip/Id ratio (on-off ratio) indicates the improvement of detectivity of the photodetector due to the annealing process. Furthermore, the annealing temperature is optimized to 550°C to achieve 200% enhancement of photocurrents of the GeSn photodetectors operated at 2 µm. Ministry of Education (MOE) National Research Foundation (NRF) Accepted version This work was support by the National Research Foundation Singapore Competitive Research Programme under Grant NRF–CRP19–2017–01 and Ministry of Education Tier-1 Project under Grant 2019-T1-002-040. 2021-04-13T01:07:46Z 2021-04-13T01:07:46Z 2021 Journal Article Wu, S., Son, B., Zhang, L., Chen, Q., Zhou, H., Goh, S. C. K. & Tan, C. S. (2021). Effects of high-temperature thermal annealing on GeSn thin-film material and photodetector operating at 2 µm. Journal of Alloys and Compounds, 872, 159696-. https://dx.doi.org/10.1016/j.jallcom.2021.159696 0925-8388 https://hdl.handle.net/10356/147836 10.1016/j.jallcom.2021.159696 872 159696 en NRF–CRP19–2017–01 and 2019-T1-002-040 Journal of Alloys and Compounds © 2021 Elsevier B.V. All rights reserved. This paper was published in Journal of Alloys and Compounds and is made available with permission of Elsevier B.V. application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering::Semiconductors Germanium-Tin Photodetector Wu, Shaoteng Son, Bongkwon Zhang, Lin Chen, Qimiao Zhou, Hao Goh, Simon Chun Kiat Tan, Chuan Seng Effects of high-temperature thermal annealing on GeSn thin-film material and photodetector operating at 2 µm |
| title | Effects of high-temperature thermal annealing on GeSn thin-film material and photodetector operating at 2 µm |
| title_full | Effects of high-temperature thermal annealing on GeSn thin-film material and photodetector operating at 2 µm |
| title_fullStr | Effects of high-temperature thermal annealing on GeSn thin-film material and photodetector operating at 2 µm |
| title_full_unstemmed | Effects of high-temperature thermal annealing on GeSn thin-film material and photodetector operating at 2 µm |
| title_short | Effects of high-temperature thermal annealing on GeSn thin-film material and photodetector operating at 2 µm |
| title_sort | effects of high temperature thermal annealing on gesn thin film material and photodetector operating at 2 µm |
| topic | Engineering::Electrical and electronic engineering::Semiconductors Germanium-Tin Photodetector |
| url | https://hdl.handle.net/10356/147836 |
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