TSV-integrated surface electrode ion trap for scalable quantum information processing

TSV-integrated surface electrode ion trap for scalable quantum information processing

In this study, we report the first Cu-filled through silicon via (TSV) integrated ion trap. TSVs are placed directly underneath electrodes as vertical interconnections between ion trap and a glass interposer, facilitating the arbitrary geometry design with increasing electrodes numbers and evolving...

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Bibliographic Details
Main Authors: Zhao, Peng, Likforman, J. P., Li, Hong Yu, Tao, Jing, Henner, T., Lim, Yu Dian, Seit, W. W., Tan, Chuan Seng, Guidoni, Luca
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2021
Subjects:
Engineering::Electrical and electronic engineering::Semiconductors
Science::Physics
Qubit
TSV
Online Access:https://hdl.handle.net/10356/148248

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