Design and development of single-qubit ion trap on glass and Si substrates with RF analysis and performance benchmarking
This article presents the design and development of surface electrode ion traps on glass and Si substrates and their radio frequency (RF) characterizations and performance benchmarking. In this case, the ion trap on glass shows superior performances in all necessary criteria. In terms of RF characte...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2021
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/148250 |
| _version_ | 1826124196625776640 |
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| author | Apriyana, Anak Agung Alit Li, Hong Yu Zhao, Peng Tao, Jing Lim, Yu Dian Lin, Ye Guidoni, Luca Tan, Chuan Seng |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Apriyana, Anak Agung Alit Li, Hong Yu Zhao, Peng Tao, Jing Lim, Yu Dian Lin, Ye Guidoni, Luca Tan, Chuan Seng |
| author_sort | Apriyana, Anak Agung Alit |
| collection | NTU |
| description | This article presents the design and development of surface electrode ion traps on glass and Si substrates and their radio frequency (RF) characterizations and performance benchmarking. In this case, the ion trap on glass shows superior performances in all necessary criteria. In terms of RF characterizations, ion traps on glass have a {Q} factor of greater than 900. This is significantly higher than the {Q} factor of its silicon counterparts, which are around 20-300. Such a high {Q} factor results in power spectral density (PSD) of greater than 10 W/MHz. On the other hand, ion traps on silicon produce PSD values of lower than 3 W/MHz. In terms of RF performance, the ion trap on glass shows insertion loss lower than 0.2 dB at 60 MHz. This is more superior to insertion loss values of ion traps on silicon, which are around 1-4 dB. The ion-traps metallization is developed using three metallization layers (0.1- mu text{m} Ti barrier layer, 2.5-3.7- mu text{m} Cu, and 0.3- mu text{m} Au) on top of the dielectric. The on-chip resonance condition can be maintained upon packaging integration. The laser optical setup for ion trapping is verified to capture a single 88Sr+ ion. |
| first_indexed | 2024-10-01T06:16:48Z |
| format | Journal Article |
| id | ntu-10356/148250 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:16:48Z |
| publishDate | 2021 |
| record_format | dspace |
| spelling | ntu-10356/1482502021-04-21T02:30:20Z Design and development of single-qubit ion trap on glass and Si substrates with RF analysis and performance benchmarking Apriyana, Anak Agung Alit Li, Hong Yu Zhao, Peng Tao, Jing Lim, Yu Dian Lin, Ye Guidoni, Luca Tan, Chuan Seng School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering::Semiconductors Qubit Glass This article presents the design and development of surface electrode ion traps on glass and Si substrates and their radio frequency (RF) characterizations and performance benchmarking. In this case, the ion trap on glass shows superior performances in all necessary criteria. In terms of RF characterizations, ion traps on glass have a {Q} factor of greater than 900. This is significantly higher than the {Q} factor of its silicon counterparts, which are around 20-300. Such a high {Q} factor results in power spectral density (PSD) of greater than 10 W/MHz. On the other hand, ion traps on silicon produce PSD values of lower than 3 W/MHz. In terms of RF performance, the ion trap on glass shows insertion loss lower than 0.2 dB at 60 MHz. This is more superior to insertion loss values of ion traps on silicon, which are around 1-4 dB. The ion-traps metallization is developed using three metallization layers (0.1- mu text{m} Ti barrier layer, 2.5-3.7- mu text{m} Cu, and 0.3- mu text{m} Au) on top of the dielectric. The on-chip resonance condition can be maintained upon packaging integration. The laser optical setup for ion trapping is verified to capture a single 88Sr+ ion. Agency for Science, Technology and Research (A*STAR) Accepted version This work is supported by Agency for Science, Technology and Research (A*STAR) under Individual Research Grant #A1783c0004. 2021-04-21T02:10:36Z 2021-04-21T02:10:36Z 2020 Journal Article Apriyana, A. A. A., Li, H. Y., Zhao, P., Tao, J., Lim, Y. D., Lin, Y., Guidoni, L. & Tan, C. S. (2020). Design and development of single-qubit ion trap on glass and Si substrates with RF analysis and performance benchmarking. IEEE Transactions On Components, Packaging and Manufacturing Technology, 10(7), 1221-1231. https://dx.doi.org/10.1109/TCPMT.2020.2995388 2156-3985 0000-0003-4232-0611 0000-0002-4850-9354 0000-0001-5058-7688 0000-0003-4188-997X 0000-0002-0681-908X 0000-0003-1250-9165 https://hdl.handle.net/10356/148250 10.1109/TCPMT.2020.2995388 2-s2.0-85088516534 7 10 1221 1231 en A1685b0005 IEEE Transactions on Components, Packaging and Manufacturing Technology © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: https://doi.org/10.1109/TCPMT.2020.2995388 application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering::Semiconductors Qubit Glass Apriyana, Anak Agung Alit Li, Hong Yu Zhao, Peng Tao, Jing Lim, Yu Dian Lin, Ye Guidoni, Luca Tan, Chuan Seng Design and development of single-qubit ion trap on glass and Si substrates with RF analysis and performance benchmarking |
| title | Design and development of single-qubit ion trap on glass and Si substrates with RF analysis and performance benchmarking |
| title_full | Design and development of single-qubit ion trap on glass and Si substrates with RF analysis and performance benchmarking |
| title_fullStr | Design and development of single-qubit ion trap on glass and Si substrates with RF analysis and performance benchmarking |
| title_full_unstemmed | Design and development of single-qubit ion trap on glass and Si substrates with RF analysis and performance benchmarking |
| title_short | Design and development of single-qubit ion trap on glass and Si substrates with RF analysis and performance benchmarking |
| title_sort | design and development of single qubit ion trap on glass and si substrates with rf analysis and performance benchmarking |
| topic | Engineering::Electrical and electronic engineering::Semiconductors Qubit Glass |
| url | https://hdl.handle.net/10356/148250 |
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