Achieving high thermoelectric quality factor toward high figure of merit in GeTe
In recent years, GeTe has received tremendous attention from the research community due to its favorable electronic and thermal properties which make it one of the best performing thermoelectric compounds. In many reports, high performance has often been achieved via various doping/alloying methods,...
| Main Authors: | , , , , , , , , , , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2021
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| Online Access: | https://hdl.handle.net/10356/148447 |
| _version_ | 1826112042196533248 |
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| author | Ady Suwardi Cao, Jing Zhao, Yunshan Wu, Jing Chien, Sheau Wei Tan, Xian Yi Hu, Lei Wang, Xizu Wang, Weide Li, Dengfeng Yin, Yan Zhou, Wu-Xing Repaka, D. V. Maheswar Chen, Jingsheng Zheng, Yun Yan, Qingyu Zhang, Gang Xu, Jianwei |
| author2 | School of Materials Science and Engineering |
| author_facet | School of Materials Science and Engineering Ady Suwardi Cao, Jing Zhao, Yunshan Wu, Jing Chien, Sheau Wei Tan, Xian Yi Hu, Lei Wang, Xizu Wang, Weide Li, Dengfeng Yin, Yan Zhou, Wu-Xing Repaka, D. V. Maheswar Chen, Jingsheng Zheng, Yun Yan, Qingyu Zhang, Gang Xu, Jianwei |
| author_sort | Ady Suwardi |
| collection | NTU |
| description | In recent years, GeTe has received tremendous attention from the research community due to its favorable electronic and thermal properties which make it one of the best performing thermoelectric compounds. In many reports, high performance has often been achieved via various doping/alloying methods, which typically involve more than one type of dopants. In contrast to the widely used co-doping strategies, this work only uses a minute amount of 1% doping, giving rise to one of the highest quality factor (1.30) at 673 K amongst GeTe, with a corresponding zT of 1.5. The high performance is attributed to simultaneously improved electronic properties via carrier concentration optimization as well as reduced thermal conductivity via additional phonon scattering brought about by In-mass fluctuations. More importantly, we elucidate on the importance of preserving the high quality factor via choosing the right dopants to optimize the carrier concentration. Furthermore, we showed that the strategy of evaluating the quality factor can be applied to other material systems, serving as a general guideline for thermoelectric materials design. The quality factor of GeTe in this work is superior to most other high-performing chalcogenides such as PbTe, SnTe, and SnS, revealing the large space for further enhancing its zT. |
| first_indexed | 2024-10-01T03:00:46Z |
| format | Journal Article |
| id | ntu-10356/148447 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:00:46Z |
| publishDate | 2021 |
| record_format | dspace |
| spelling | ntu-10356/1484472023-07-14T16:03:30Z Achieving high thermoelectric quality factor toward high figure of merit in GeTe Ady Suwardi Cao, Jing Zhao, Yunshan Wu, Jing Chien, Sheau Wei Tan, Xian Yi Hu, Lei Wang, Xizu Wang, Weide Li, Dengfeng Yin, Yan Zhou, Wu-Xing Repaka, D. V. Maheswar Chen, Jingsheng Zheng, Yun Yan, Qingyu Zhang, Gang Xu, Jianwei School of Materials Science and Engineering Engineering::Materials::Functional materials Thermoelectrics (TE) Chalcogenides In recent years, GeTe has received tremendous attention from the research community due to its favorable electronic and thermal properties which make it one of the best performing thermoelectric compounds. In many reports, high performance has often been achieved via various doping/alloying methods, which typically involve more than one type of dopants. In contrast to the widely used co-doping strategies, this work only uses a minute amount of 1% doping, giving rise to one of the highest quality factor (1.30) at 673 K amongst GeTe, with a corresponding zT of 1.5. The high performance is attributed to simultaneously improved electronic properties via carrier concentration optimization as well as reduced thermal conductivity via additional phonon scattering brought about by In-mass fluctuations. More importantly, we elucidate on the importance of preserving the high quality factor via choosing the right dopants to optimize the carrier concentration. Furthermore, we showed that the strategy of evaluating the quality factor can be applied to other material systems, serving as a general guideline for thermoelectric materials design. The quality factor of GeTe in this work is superior to most other high-performing chalcogenides such as PbTe, SnTe, and SnS, revealing the large space for further enhancing its zT. Ministry of Education (MOE) Accepted version The authors acknowledge support from A*STAR’s Science and Engineering Research Council, PHAROS program on Hybrid Thermoelectrics for Ambient Applications: 1527200019, and Agritech program on Sustainable Hybrid Lighting System for Controlled Environment Agriculture: A19D9a0096. DVM. Repaka acknowledges PHAROS 1527200018. Q. Yan acknowledges Singapore MOE AcRF Tier 2 under Grant Nos. 2018-T2-1-010, Singapore A*STAR Pharos Program SERC 1527200022. 2021-05-19T02:06:06Z 2021-05-19T02:06:06Z 2020 Journal Article Ady Suwardi, Cao, J., Zhao, Y., Wu, J., Chien, S. W., Tan, X. Y., Hu, L., Wang, X., Wang, W., Li, D., Yin, Y., Zhou, W., Repaka, D. V. M., Chen, J., Zheng, Y., Yan, Q., Zhang, G. & Xu, J. (2020). Achieving high thermoelectric quality factor toward high figure of merit in GeTe. Materials Today Physics, 14, 100239-. https://dx.doi.org/10.1016/j.mtphys.2020.100239 2542-5293 https://hdl.handle.net/10356/148447 10.1016/j.mtphys.2020.100239 14 100239 en Materials Today Physics © 2021 Elsevier B.V. All rights reserved. This paper was published in Materials Today Physics and is made available with permission of Elsevier B.V. application/pdf |
| spellingShingle | Engineering::Materials::Functional materials Thermoelectrics (TE) Chalcogenides Ady Suwardi Cao, Jing Zhao, Yunshan Wu, Jing Chien, Sheau Wei Tan, Xian Yi Hu, Lei Wang, Xizu Wang, Weide Li, Dengfeng Yin, Yan Zhou, Wu-Xing Repaka, D. V. Maheswar Chen, Jingsheng Zheng, Yun Yan, Qingyu Zhang, Gang Xu, Jianwei Achieving high thermoelectric quality factor toward high figure of merit in GeTe |
| title | Achieving high thermoelectric quality factor toward high figure of merit in GeTe |
| title_full | Achieving high thermoelectric quality factor toward high figure of merit in GeTe |
| title_fullStr | Achieving high thermoelectric quality factor toward high figure of merit in GeTe |
| title_full_unstemmed | Achieving high thermoelectric quality factor toward high figure of merit in GeTe |
| title_short | Achieving high thermoelectric quality factor toward high figure of merit in GeTe |
| title_sort | achieving high thermoelectric quality factor toward high figure of merit in gete |
| topic | Engineering::Materials::Functional materials Thermoelectrics (TE) Chalcogenides |
| url | https://hdl.handle.net/10356/148447 |
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