PIC-integrable, uniformly 056%-tensile strained Ge-on-insulator photodiodes enabled by recessed SiNx stressor
Mechanical strain engineering has been promising for many integrated photonic applications. However, for the engineering of material electronic bandgap, a trade-off exists between the strain uniformity and the integration compatibility with photonic-integrated circuits (PICs). Herein, we adopted...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2021
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/148609 |
| _version_ | 1811694769464672256 |
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| author | Lin, Yiding Ma, Danhao Lee, Kwang Hong Wen, Rui-Tao Syaranamual, Govindo Kimerling, Lionel Tan, Chuan Seng Michel, Jurgen |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Lin, Yiding Ma, Danhao Lee, Kwang Hong Wen, Rui-Tao Syaranamual, Govindo Kimerling, Lionel Tan, Chuan Seng Michel, Jurgen |
| author_sort | Lin, Yiding |
| collection | NTU |
| description | Mechanical strain engineering has been promising for many integrated photonic
applications. However, for the engineering of material electronic bandgap, a trade-off exists
between the strain uniformity and the integration compatibility with photonic-integrated
circuits (PICs). Herein, we adopted a straightforward recess-type design of silicon nitride
(SiNx) stressor to achieve a uniform strain with enhanced magnitude in the material of interest
on PICs. Normal-incidence, uniformly 0.56%-tensile strained germanium (Ge)-on-insulator
(GOI) metal-semiconductor-metal photodiodes were demonstrated, using the recessed
stressor with 750-MPa tensile stress. The device exhibits a responsivity of 1.84±0.15 A/W at
1,550 nm. The extracted Ge absorption coefficient is enhanced by ~3.2× to 8,340 cm-1 at
1,612 nm and is superior to that of In0.53Ga0.47As up to 1,630 nm limited by measurement
spectrum. Compared to the non-recess strained device, additional absorption coefficient
improvement of 10‒20% in the C-band and 40‒60% in the L-band were observed. This work
facilitates the recess-strained GOI photodiodes for free-space PIC applications and paves the
way for various (e.g. Ge, GeSn or III-V based) uniformly strained photonic devices on PICs. |
| first_indexed | 2024-10-01T07:12:50Z |
| format | Journal Article |
| id | ntu-10356/148609 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:12:50Z |
| publishDate | 2021 |
| record_format | dspace |
| spelling | ntu-10356/1486092021-05-30T05:24:37Z PIC-integrable, uniformly 056%-tensile strained Ge-on-insulator photodiodes enabled by recessed SiNx stressor Lin, Yiding Ma, Danhao Lee, Kwang Hong Wen, Rui-Tao Syaranamual, Govindo Kimerling, Lionel Tan, Chuan Seng Michel, Jurgen School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering::Semiconductors Germanium Photodetector Mechanical strain engineering has been promising for many integrated photonic applications. However, for the engineering of material electronic bandgap, a trade-off exists between the strain uniformity and the integration compatibility with photonic-integrated circuits (PICs). Herein, we adopted a straightforward recess-type design of silicon nitride (SiNx) stressor to achieve a uniform strain with enhanced magnitude in the material of interest on PICs. Normal-incidence, uniformly 0.56%-tensile strained germanium (Ge)-on-insulator (GOI) metal-semiconductor-metal photodiodes were demonstrated, using the recessed stressor with 750-MPa tensile stress. The device exhibits a responsivity of 1.84±0.15 A/W at 1,550 nm. The extracted Ge absorption coefficient is enhanced by ~3.2× to 8,340 cm-1 at 1,612 nm and is superior to that of In0.53Ga0.47As up to 1,630 nm limited by measurement spectrum. Compared to the non-recess strained device, additional absorption coefficient improvement of 10‒20% in the C-band and 40‒60% in the L-band were observed. This work facilitates the recess-strained GOI photodiodes for free-space PIC applications and paves the way for various (e.g. Ge, GeSn or III-V based) uniformly strained photonic devices on PICs. Ministry of Education (MOE) National Research Foundation (NRF) Published version This work was support by the National Research Foundation Singapore Competitive Research Programme under Grant NRF–CRP19–2017–01 and Ministry of Education Tier-1 Project under Grant 2019-T1-002-040. 2021-05-30T05:24:37Z 2021-05-30T05:24:37Z 2021 Journal Article Lin, Y., Ma, D., Lee, K. H., Wen, R., Syaranamual, G., Kimerling, L., Tan, C. S. & Michel, J. (2021). PIC-integrable, uniformly 056%-tensile strained Ge-on-insulator photodiodes enabled by recessed SiNx stressor. Photonics Research. https://dx.doi.org/10.1364/PRJ.419776 2327-9125 https://hdl.handle.net/10356/148609 10.1364/PRJ.419776 en NRF–CRP19–2017–01 and 2019-T1-002-040 Photonics Research © 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement. application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering::Semiconductors Germanium Photodetector Lin, Yiding Ma, Danhao Lee, Kwang Hong Wen, Rui-Tao Syaranamual, Govindo Kimerling, Lionel Tan, Chuan Seng Michel, Jurgen PIC-integrable, uniformly 056%-tensile strained Ge-on-insulator photodiodes enabled by recessed SiNx stressor |
| title | PIC-integrable, uniformly 056%-tensile strained Ge-on-insulator photodiodes enabled by recessed SiNx stressor |
| title_full | PIC-integrable, uniformly 056%-tensile strained Ge-on-insulator photodiodes enabled by recessed SiNx stressor |
| title_fullStr | PIC-integrable, uniformly 056%-tensile strained Ge-on-insulator photodiodes enabled by recessed SiNx stressor |
| title_full_unstemmed | PIC-integrable, uniformly 056%-tensile strained Ge-on-insulator photodiodes enabled by recessed SiNx stressor |
| title_short | PIC-integrable, uniformly 056%-tensile strained Ge-on-insulator photodiodes enabled by recessed SiNx stressor |
| title_sort | pic integrable uniformly 056 tensile strained ge on insulator photodiodes enabled by recessed sinx stressor |
| topic | Engineering::Electrical and electronic engineering::Semiconductors Germanium Photodetector |
| url | https://hdl.handle.net/10356/148609 |
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