A monolithic artificial iconic memory based on highly stable perovskite-metal multilayers
Artificial iconic memories, also called photomemories, are new types of nonvolatile memory that can simultaneously detect and store light information in a monolithic device. Several approaches have been proposed to construct artificial iconic memories, such as three-terminal field effect transistors...
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2021
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| Online Access: | https://hdl.handle.net/10356/148754 |
| _version_ | 1826120318222073856 |
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| author | Guan, Xinwei Wang , Yutao Lin, Chun-Ho Hu, Long Ge, Shuaipeng Wan, Tao Younis, Adnan Li, Feng Cui, Yimin Qi, Dong-Chen Chu, Dewei Chen, Xiaodong Wu, Tom |
| author2 | School of Materials Science and Engineering |
| author_facet | School of Materials Science and Engineering Guan, Xinwei Wang , Yutao Lin, Chun-Ho Hu, Long Ge, Shuaipeng Wan, Tao Younis, Adnan Li, Feng Cui, Yimin Qi, Dong-Chen Chu, Dewei Chen, Xiaodong Wu, Tom |
| author_sort | Guan, Xinwei |
| collection | NTU |
| description | Artificial iconic memories, also called photomemories, are new types of nonvolatile memory that can simultaneously detect and store light information in a monolithic device. Several approaches have been proposed to construct artificial iconic memories, such as three-terminal field effect transistors, which can achieve an effective control of the gate voltage and external light terminals. The drawbacks in constructing these memories involve complicated fabrication processes, and the resulting performance of, for example, perovskite transistor-type photomemories is limited by the low carrier mobilities and poor ambient stabilities, whereas architectures based on floating gate modulations entail strict interface engineering and poor device reliability. In this paper, we propose a novel monolithic artificial iconic memory with a multilayer architecture of indium tin oxide/perovskite/gold/perovskite/silver, which combines the memory and photodetector functionalities of perovskites in an integrated device. The bottom perovskite layer plays the role of a photodetector, modulating the voltage bias on the top perovskite layer that serves as a resistive switching memory. This multilayer perovskite device can store photo-sensing data in its resistive states, with a memory retention of 5 × 103 s and ambient stability longer than sixty days. As a prototype demonstration, a 7 × 7 artificial iconic memory array is constructed to detect and store data on light intensity distribution, enabling a nonvolatile imaging functionality. Our work provides a new platform for designing perovskite-based architectures with simultaneous light detection and data storage capabilities. |
| first_indexed | 2024-10-01T05:14:31Z |
| format | Journal Article |
| id | ntu-10356/148754 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:14:31Z |
| publishDate | 2021 |
| record_format | dspace |
| spelling | ntu-10356/1487542023-07-14T16:03:02Z A monolithic artificial iconic memory based on highly stable perovskite-metal multilayers Guan, Xinwei Wang , Yutao Lin, Chun-Ho Hu, Long Ge, Shuaipeng Wan, Tao Younis, Adnan Li, Feng Cui, Yimin Qi, Dong-Chen Chu, Dewei Chen, Xiaodong Wu, Tom School of Materials Science and Engineering Engineering::Materials Digital Storage Field Effect Transistors Photodetectors Artificial iconic memories, also called photomemories, are new types of nonvolatile memory that can simultaneously detect and store light information in a monolithic device. Several approaches have been proposed to construct artificial iconic memories, such as three-terminal field effect transistors, which can achieve an effective control of the gate voltage and external light terminals. The drawbacks in constructing these memories involve complicated fabrication processes, and the resulting performance of, for example, perovskite transistor-type photomemories is limited by the low carrier mobilities and poor ambient stabilities, whereas architectures based on floating gate modulations entail strict interface engineering and poor device reliability. In this paper, we propose a novel monolithic artificial iconic memory with a multilayer architecture of indium tin oxide/perovskite/gold/perovskite/silver, which combines the memory and photodetector functionalities of perovskites in an integrated device. The bottom perovskite layer plays the role of a photodetector, modulating the voltage bias on the top perovskite layer that serves as a resistive switching memory. This multilayer perovskite device can store photo-sensing data in its resistive states, with a memory retention of 5 × 103 s and ambient stability longer than sixty days. As a prototype demonstration, a 7 × 7 artificial iconic memory array is constructed to detect and store data on light intensity distribution, enabling a nonvolatile imaging functionality. Our work provides a new platform for designing perovskite-based architectures with simultaneous light detection and data storage capabilities. Published version This work was supported by the University of New South Wales SHARP Project. D.-C. Qi acknowledges the support of the Australian Research Council (Grant No. FT160100207) and the continued support from the Queensland University of Technology (QUT) through the Centre for Materials Science. 2021-08-30T04:34:29Z 2021-08-30T04:34:29Z 2020 Journal Article Guan, X., Wang , Y., Lin, C., Hu, L., Ge, S., Wan, T., Younis, A., Li, F., Cui, Y., Qi, D., Chu, D., Chen, X. & Wu, T. (2020). A monolithic artificial iconic memory based on highly stable perovskite-metal multilayers. Applied Physics Reviews, 7(3), 031401-. https://dx.doi.org/10.1063/5.0009713 1931-9401 0000-0003-0882-4728 0000-0003-4448-074X 0000-0002-5142-7528 0000-0001-8466-0257 0000-0003-0845-4827 https://hdl.handle.net/10356/148754 10.1063/5.0009713 2-s2.0-85093865916 3 7 031401 en Applied Physics Reviews © 2020 Author(s). All rights reserved. This paper was published by American Institute of Physics (AIP) in Applied Physics Reviews and is made available with permission of the Author(s). application/pdf |
| spellingShingle | Engineering::Materials Digital Storage Field Effect Transistors Photodetectors Guan, Xinwei Wang , Yutao Lin, Chun-Ho Hu, Long Ge, Shuaipeng Wan, Tao Younis, Adnan Li, Feng Cui, Yimin Qi, Dong-Chen Chu, Dewei Chen, Xiaodong Wu, Tom A monolithic artificial iconic memory based on highly stable perovskite-metal multilayers |
| title | A monolithic artificial iconic memory based on highly stable perovskite-metal multilayers |
| title_full | A monolithic artificial iconic memory based on highly stable perovskite-metal multilayers |
| title_fullStr | A monolithic artificial iconic memory based on highly stable perovskite-metal multilayers |
| title_full_unstemmed | A monolithic artificial iconic memory based on highly stable perovskite-metal multilayers |
| title_short | A monolithic artificial iconic memory based on highly stable perovskite-metal multilayers |
| title_sort | monolithic artificial iconic memory based on highly stable perovskite metal multilayers |
| topic | Engineering::Materials Digital Storage Field Effect Transistors Photodetectors |
| url | https://hdl.handle.net/10356/148754 |
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