Investigation of interface properties of h-BN and AlN on AlGaN/GaN heterostructures

Investigation of interface properties of h-BN and AlN on AlGaN/GaN heterostructures

AlGaN/GaN based high electron mobility transistors (HEMTs) are excellent for high-frequency and high-power applications such as DC-DC convertors, cellular base stations, radar and wireless communication systems. This is due to its excellent intrinsic material properties such as a wide band gap, high...

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Bibliographic Details
Main Author:	Whiteside, Matthew David
Other Authors:	Ng Geok Ing
Format:	Thesis-Doctor of Philosophy
Language:	English
Published:	Nanyang Technological University 2021
Subjects:	Engineering::Electrical and electronic engineering::Semiconductors Engineering::Electrical and electronic engineering::Microelectronics
Online Access:	https://hdl.handle.net/10356/150543

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