Mid-infrared GaN/AlGaN quantum cascade detector grown on silicon
We demonstrate the first implementation of a GaN-based infrared photodetector epitaxially grown on silicon. The device is a GaN/AlGaN quantum cascade detector that consists of layered quantum well structure grown by plasma-assisted molecular beam epitaxy on a 4-in Si (111) substrate. The design, sim...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2021
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| Online Access: | https://hdl.handle.net/10356/150803 |
| _version_ | 1826122959631155200 |
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| author | Dror, Ben Zheng, Yuanjin Agrawal, M. Radhakrishnan, K. Orenstein, Meir Bahir, Gad |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Dror, Ben Zheng, Yuanjin Agrawal, M. Radhakrishnan, K. Orenstein, Meir Bahir, Gad |
| author_sort | Dror, Ben |
| collection | NTU |
| description | We demonstrate the first implementation of a GaN-based infrared photodetector epitaxially grown on silicon. The device is a GaN/AlGaN quantum cascade detector that consists of layered quantum well structure grown by plasma-assisted molecular beam epitaxy on a 4-in Si (111) substrate. The design, simulations, growth process, optical measurements and device performance are presented and discussed. The photosignal, centered at a wavelength of 4.4 μm, is resolved up to 150 K. The zero bias responsivity is 44 μA/W at 19 K and the detectivity is 2 × 10 8 Jones. |
| first_indexed | 2024-10-01T05:57:06Z |
| format | Journal Article |
| id | ntu-10356/150803 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:57:06Z |
| publishDate | 2021 |
| record_format | dspace |
| spelling | ntu-10356/1508032021-06-08T09:13:26Z Mid-infrared GaN/AlGaN quantum cascade detector grown on silicon Dror, Ben Zheng, Yuanjin Agrawal, M. Radhakrishnan, K. Orenstein, Meir Bahir, Gad School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering Quantum Well Devices Photonic Integrated Circuits We demonstrate the first implementation of a GaN-based infrared photodetector epitaxially grown on silicon. The device is a GaN/AlGaN quantum cascade detector that consists of layered quantum well structure grown by plasma-assisted molecular beam epitaxy on a 4-in Si (111) substrate. The design, simulations, growth process, optical measurements and device performance are presented and discussed. The photosignal, centered at a wavelength of 4.4 μm, is resolved up to 150 K. The zero bias responsivity is 44 μA/W at 19 K and the detectivity is 2 × 10 8 Jones. 2021-06-08T09:13:26Z 2021-06-08T09:13:26Z 2019 Journal Article Dror, B., Zheng, Y., Agrawal, M., Radhakrishnan, K., Orenstein, M. & Bahir, G. (2019). Mid-infrared GaN/AlGaN quantum cascade detector grown on silicon. IEEE Electron Device Letters, 40(2), 263-266. https://dx.doi.org/10.1109/LED.2018.2885611 0741-3106 0000-0003-4566-2422 0000-0002-8910-3297 0000-0002-1644-4365 https://hdl.handle.net/10356/150803 10.1109/LED.2018.2885611 2-s2.0-85058162212 2 40 263 266 en IEEE Electron Device Letters © 2018 IEEE. All rights reserved. |
| spellingShingle | Engineering::Electrical and electronic engineering Quantum Well Devices Photonic Integrated Circuits Dror, Ben Zheng, Yuanjin Agrawal, M. Radhakrishnan, K. Orenstein, Meir Bahir, Gad Mid-infrared GaN/AlGaN quantum cascade detector grown on silicon |
| title | Mid-infrared GaN/AlGaN quantum cascade detector grown on silicon |
| title_full | Mid-infrared GaN/AlGaN quantum cascade detector grown on silicon |
| title_fullStr | Mid-infrared GaN/AlGaN quantum cascade detector grown on silicon |
| title_full_unstemmed | Mid-infrared GaN/AlGaN quantum cascade detector grown on silicon |
| title_short | Mid-infrared GaN/AlGaN quantum cascade detector grown on silicon |
| title_sort | mid infrared gan algan quantum cascade detector grown on silicon |
| topic | Engineering::Electrical and electronic engineering Quantum Well Devices Photonic Integrated Circuits |
| url | https://hdl.handle.net/10356/150803 |
| work_keys_str_mv | AT drorben midinfraredganalganquantumcascadedetectorgrownonsilicon AT zhengyuanjin midinfraredganalganquantumcascadedetectorgrownonsilicon AT agrawalm midinfraredganalganquantumcascadedetectorgrownonsilicon AT radhakrishnank midinfraredganalganquantumcascadedetectorgrownonsilicon AT orensteinmeir midinfraredganalganquantumcascadedetectorgrownonsilicon AT bahirgad midinfraredganalganquantumcascadedetectorgrownonsilicon |