Two-step chemical vapor deposition synthesis of NiTe2-MoS2 vertical junctions with improved MoS2 transistor performance
The primary challenge for the widespread applications of two-dimensional (2D) electronics is to achieve satisfactory electrical contacts because, during traditional metal integration process, difficulties arise due to inevitable physical damages and selectively doping. The two-dimensional metal-sem...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2021
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/150892 |
| _version_ | 1811696647915175936 |
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| author | Guo, Yuxi Kang, Lixing Zeng, Qingsheng Xu, Manzhang Li, Lei Wu, Yao Yang, Jiefu Zhang, Yanni Qi, Xiaofei Zhao, Wu Zhang, Zhiyong Liu, Zheng |
| author2 | School of Materials Science and Engineering |
| author_facet | School of Materials Science and Engineering Guo, Yuxi Kang, Lixing Zeng, Qingsheng Xu, Manzhang Li, Lei Wu, Yao Yang, Jiefu Zhang, Yanni Qi, Xiaofei Zhao, Wu Zhang, Zhiyong Liu, Zheng |
| author_sort | Guo, Yuxi |
| collection | NTU |
| description | The primary challenge for the widespread applications of two-dimensional (2D) electronics is to achieve satisfactory electrical contacts because, during traditional metal integration process,
difficulties arise due to inevitable physical damages and selectively doping. The two-dimensional metal-semiconductor junctions have attracted captivated attention for the potential applications to achieve reliable electrical contacts in future atomically thin electronics. Here we demonstrate the van der Waals epitaxial growth of 2D NiTe2-MoS2 metal-semiconductor vertical junctions which the upper NiTe2 selectively nucleates at the edge of underlying MoS2. Optical microscopy (OM), scanning electron microscopy (SEM), atomic force microscopy (AFM), and scanning transmission electron microscope (STEM) studies confirm that NiTe2-MoS2 metal-semiconductor vertical junctions are successfully synthesized. Electrical properties of the NiTe2-contacted MoS2 field-effect transistors (FETs) show higher field-effect mobilities (μFE) than those with deposited Cr/Au contacts. This study demonstrates an effective pathway to improved MoS2 transistors performance with metal-semiconductor junctions. |
| first_indexed | 2024-10-01T07:42:42Z |
| format | Journal Article |
| id | ntu-10356/150892 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:42:42Z |
| publishDate | 2021 |
| record_format | dspace |
| spelling | ntu-10356/1508922023-07-14T16:02:42Z Two-step chemical vapor deposition synthesis of NiTe2-MoS2 vertical junctions with improved MoS2 transistor performance Guo, Yuxi Kang, Lixing Zeng, Qingsheng Xu, Manzhang Li, Lei Wu, Yao Yang, Jiefu Zhang, Yanni Qi, Xiaofei Zhao, Wu Zhang, Zhiyong Liu, Zheng School of Materials Science and Engineering School of Information Science and Technology, Northwest University Engineering::Materials Chemical Vapor Deposition 2D Materials The primary challenge for the widespread applications of two-dimensional (2D) electronics is to achieve satisfactory electrical contacts because, during traditional metal integration process, difficulties arise due to inevitable physical damages and selectively doping. The two-dimensional metal-semiconductor junctions have attracted captivated attention for the potential applications to achieve reliable electrical contacts in future atomically thin electronics. Here we demonstrate the van der Waals epitaxial growth of 2D NiTe2-MoS2 metal-semiconductor vertical junctions which the upper NiTe2 selectively nucleates at the edge of underlying MoS2. Optical microscopy (OM), scanning electron microscopy (SEM), atomic force microscopy (AFM), and scanning transmission electron microscope (STEM) studies confirm that NiTe2-MoS2 metal-semiconductor vertical junctions are successfully synthesized. Electrical properties of the NiTe2-contacted MoS2 field-effect transistors (FETs) show higher field-effect mobilities (μFE) than those with deposited Cr/Au contacts. This study demonstrates an effective pathway to improved MoS2 transistors performance with metal-semiconductor junctions. Ministry of Education (MOE) This work was supported by the National Research Foundation–Competitive Research Program NRF-CRP21-2018-0007 and CRP22-2019-0060, MOE Tier 2 MOE2017-T2-2-136, Tier 3 MOE2018-T3-1-002, and A*Star QTE programme. Z. Z. acknowledge supports from the National Natural Science Foundation of China (grants 61701402, 61804125, 61974120 and 61904148), the Key Program for International Science and Technology Cooperation Project of Shaanxi Province (grants 2018KWZ-08 and 2019KW-029), the National Key Research and Development Program of China (2019YFC1520904), the Natural Science Foundation of Shaanxi Province (grants 2017JM5135 and 2018JM6046), the Key Research and Development Program of Shaanxi Province (2018GY-025), the Foundation of the Education Department of Shaanxi Province (grans 18JK0772 and 18JK0780) and the Technology Innovation Program of Xi'an 201805041YD19CG25(1). 2021-06-14T03:33:28Z 2021-06-14T03:33:28Z 2021 Journal Article Guo, Y., Kang, L., Zeng, Q., Xu, M., Li, L., Wu, Y., Yang, J., Zhang, Y., Qi, X., Zhao, W., Zhang, Z. & Liu, Z. (2021). Two-step chemical vapor deposition synthesis of NiTe2-MoS2 vertical junctions with improved MoS2 transistor performance. Nanotechnology. https://dx.doi.org/10.1088/1361-6528/abe963 0957-4484 https://hdl.handle.net/10356/150892 10.1088/1361-6528/abe963 en NRF-CRP21-2018-0007 CRP22-2019-0060 MOE2017-T2-2-136 MOE2018-T3-1-002 Nanotechnology © 2021 IOP Publishing Ltd. All rights reserved. This is an author-created, un-copyedited version of an article accepted for publication in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The definitive publisher authenticated version is available online at https://doi.org/10.1088/1361-6528/abe963 application/pdf |
| spellingShingle | Engineering::Materials Chemical Vapor Deposition 2D Materials Guo, Yuxi Kang, Lixing Zeng, Qingsheng Xu, Manzhang Li, Lei Wu, Yao Yang, Jiefu Zhang, Yanni Qi, Xiaofei Zhao, Wu Zhang, Zhiyong Liu, Zheng Two-step chemical vapor deposition synthesis of NiTe2-MoS2 vertical junctions with improved MoS2 transistor performance |
| title | Two-step chemical vapor deposition synthesis of NiTe2-MoS2 vertical junctions with improved MoS2 transistor performance |
| title_full | Two-step chemical vapor deposition synthesis of NiTe2-MoS2 vertical junctions with improved MoS2 transistor performance |
| title_fullStr | Two-step chemical vapor deposition synthesis of NiTe2-MoS2 vertical junctions with improved MoS2 transistor performance |
| title_full_unstemmed | Two-step chemical vapor deposition synthesis of NiTe2-MoS2 vertical junctions with improved MoS2 transistor performance |
| title_short | Two-step chemical vapor deposition synthesis of NiTe2-MoS2 vertical junctions with improved MoS2 transistor performance |
| title_sort | two step chemical vapor deposition synthesis of nite2 mos2 vertical junctions with improved mos2 transistor performance |
| topic | Engineering::Materials Chemical Vapor Deposition 2D Materials |
| url | https://hdl.handle.net/10356/150892 |
| work_keys_str_mv | AT guoyuxi twostepchemicalvapordepositionsynthesisofnite2mos2verticaljunctionswithimprovedmos2transistorperformance AT kanglixing twostepchemicalvapordepositionsynthesisofnite2mos2verticaljunctionswithimprovedmos2transistorperformance AT zengqingsheng twostepchemicalvapordepositionsynthesisofnite2mos2verticaljunctionswithimprovedmos2transistorperformance AT xumanzhang twostepchemicalvapordepositionsynthesisofnite2mos2verticaljunctionswithimprovedmos2transistorperformance AT lilei twostepchemicalvapordepositionsynthesisofnite2mos2verticaljunctionswithimprovedmos2transistorperformance AT wuyao twostepchemicalvapordepositionsynthesisofnite2mos2verticaljunctionswithimprovedmos2transistorperformance AT yangjiefu twostepchemicalvapordepositionsynthesisofnite2mos2verticaljunctionswithimprovedmos2transistorperformance AT zhangyanni twostepchemicalvapordepositionsynthesisofnite2mos2verticaljunctionswithimprovedmos2transistorperformance AT qixiaofei twostepchemicalvapordepositionsynthesisofnite2mos2verticaljunctionswithimprovedmos2transistorperformance AT zhaowu twostepchemicalvapordepositionsynthesisofnite2mos2verticaljunctionswithimprovedmos2transistorperformance AT zhangzhiyong twostepchemicalvapordepositionsynthesisofnite2mos2verticaljunctionswithimprovedmos2transistorperformance AT liuzheng twostepchemicalvapordepositionsynthesisofnite2mos2verticaljunctionswithimprovedmos2transistorperformance |