Electrochemistry of layered semiconducting AᴵᴵᴵBᵛᴵ chalcogenides : indium monochalcogenides (InS, InSe, InTe)

Electrochemistry of layered semiconducting AᴵᴵᴵBᵛᴵ chalcogenides : indium monochalcogenides (InS, InSe, InTe)

Layered AᴵᴵᴵBᵛᴵ chalcogenides represent an interesting class semiconductors, where most of adopting 2D structures. Unlike the typical sandwiched structure of transition metal dichalcogenides (TMDs), layered AᴵᴵᴵBᵛᴵ chalcogenides like InSe and GaSe are composed of X−M−M−X motif where M is gallium/ind...

Deskribapen osoa

Xehetasun bibliografikoak
Egile Nagusiak:	Wang, Yong, Szökölová, Katerina, Muhammad Zafir Mohamad Nasir, Sofer, Zdenek, Pumera, Martin
Beste egile batzuk:	School of Physical and Mathematical Sciences
Formatua:	Journal Article
Hizkuntza:	English
Argitaratua:	2021
Gaiak:	Science::Chemistry Indium Monochalcogenides Layered Materials
Sarrera elektronikoa:	https://hdl.handle.net/10356/151160

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