Nonvolatile multistates memories for high-density data storage
In the current information age, the realization of memory devices with energy efficient design, high storage density, nonvolatility, fast access, and low cost is still a great challenge. As a promising technology to meet these stringent requirements, nonvolatile multistates memory (NMSM) has attract...
| Main Authors: | , , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2021
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/151391 |
| _version_ | 1826114546005180416 |
|---|---|
| author | Cao, Qiang Lü, Weiming Wang, Renshaw Xiao Guan, Xinwei Wang, Lan Yan, Shishen Wu, Tom Wang, Xiaolin |
| author2 | School of Physical and Mathematical Sciences |
| author_facet | School of Physical and Mathematical Sciences Cao, Qiang Lü, Weiming Wang, Renshaw Xiao Guan, Xinwei Wang, Lan Yan, Shishen Wu, Tom Wang, Xiaolin |
| author_sort | Cao, Qiang |
| collection | NTU |
| description | In the current information age, the realization of memory devices with energy efficient design, high storage density, nonvolatility, fast access, and low cost is still a great challenge. As a promising technology to meet these stringent requirements, nonvolatile multistates memory (NMSM) has attracted lots of attention over the past years. Owing to the capability to store data in more than a single bit (0 or 1), the storage density is dramatically enhanced without scaling down the memory cell, making memory devices more efficient and less expensive. Multistates in a single cell also provide an unconventional in-memory computing platform beyond the Von Neumann architecture and enable neuromorphic computing with low power consumption. In this review, an in-depth perspective is presented on the recent progress and challenges on the device architectures, material innovation, working mechanisms of various types of NMSMs, including flash, magnetic random-access memory (MRAM), resistive random-access memory (RRAM), ferroelectric random-access memory (FeRAM), and phase-change memory (PCM). The intriguing properties and performance of these NMSMs, which are the key to realizing highly integrated memory hierarchy, are discussed and compared. |
| first_indexed | 2024-10-01T03:40:53Z |
| format | Journal Article |
| id | ntu-10356/151391 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:40:53Z |
| publishDate | 2021 |
| record_format | dspace |
| spelling | ntu-10356/1513912023-02-28T19:53:40Z Nonvolatile multistates memories for high-density data storage Cao, Qiang Lü, Weiming Wang, Renshaw Xiao Guan, Xinwei Wang, Lan Yan, Shishen Wu, Tom Wang, Xiaolin School of Physical and Mathematical Sciences Engineering::Materials Chemical Structure Circuits In the current information age, the realization of memory devices with energy efficient design, high storage density, nonvolatility, fast access, and low cost is still a great challenge. As a promising technology to meet these stringent requirements, nonvolatile multistates memory (NMSM) has attracted lots of attention over the past years. Owing to the capability to store data in more than a single bit (0 or 1), the storage density is dramatically enhanced without scaling down the memory cell, making memory devices more efficient and less expensive. Multistates in a single cell also provide an unconventional in-memory computing platform beyond the Von Neumann architecture and enable neuromorphic computing with low power consumption. In this review, an in-depth perspective is presented on the recent progress and challenges on the device architectures, material innovation, working mechanisms of various types of NMSMs, including flash, magnetic random-access memory (MRAM), resistive random-access memory (RRAM), ferroelectric random-access memory (FeRAM), and phase-change memory (PCM). The intriguing properties and performance of these NMSMs, which are the key to realizing highly integrated memory hierarchy, are discussed and compared. Ministry of Education (MOE) Accepted version 2021-06-13T04:30:58Z 2021-06-13T04:30:58Z 2020 Journal Article Cao, Q., Lü, W., Wang, R. X., Guan, X., Wang, L., Yan, S., Wu, T. & Wang, X. (2020). Nonvolatile multistates memories for high-density data storage. ACS Applied Materials and Interfaces, 12(38), 42449-42471. https://dx.doi.org/10.1021/acsami.0c10184 1944-8244 0000-0003-4469-0659 0000-0002-7327-9968 0000-0003-0845-4827 0000-0003-4150-0848 https://hdl.handle.net/10356/151391 10.1021/acsami.0c10184 32812741 2-s2.0-85091562543 38 12 42449 42471 en ACS Applied Materials and Interfaces This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials and Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsami.0c10184 application/pdf |
| spellingShingle | Engineering::Materials Chemical Structure Circuits Cao, Qiang Lü, Weiming Wang, Renshaw Xiao Guan, Xinwei Wang, Lan Yan, Shishen Wu, Tom Wang, Xiaolin Nonvolatile multistates memories for high-density data storage |
| title | Nonvolatile multistates memories for high-density data storage |
| title_full | Nonvolatile multistates memories for high-density data storage |
| title_fullStr | Nonvolatile multistates memories for high-density data storage |
| title_full_unstemmed | Nonvolatile multistates memories for high-density data storage |
| title_short | Nonvolatile multistates memories for high-density data storage |
| title_sort | nonvolatile multistates memories for high density data storage |
| topic | Engineering::Materials Chemical Structure Circuits |
| url | https://hdl.handle.net/10356/151391 |
| work_keys_str_mv | AT caoqiang nonvolatilemultistatesmemoriesforhighdensitydatastorage AT luweiming nonvolatilemultistatesmemoriesforhighdensitydatastorage AT wangrenshawxiao nonvolatilemultistatesmemoriesforhighdensitydatastorage AT guanxinwei nonvolatilemultistatesmemoriesforhighdensitydatastorage AT wanglan nonvolatilemultistatesmemoriesforhighdensitydatastorage AT yanshishen nonvolatilemultistatesmemoriesforhighdensitydatastorage AT wutom nonvolatilemultistatesmemoriesforhighdensitydatastorage AT wangxiaolin nonvolatilemultistatesmemoriesforhighdensitydatastorage |