Study of the leakage behavior of PZT thin film
This Final Year Project discusses primarily about the ferroelectric material lead zirconate titanate. Its unique spontaneous polarization and dielectric properties make it usual for modern storage devices such as NvFRAM and SWNT FET. The project investigates leakage current of the PZT thin film, and...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2009
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| Online Access: | http://hdl.handle.net/10356/15140 |