GeSn-on-insulator dual-waveband resonant-cavity-enhanced photodetectors at the 2 μm and 155 μm optical communication bands
Germanium-tin-on-insulator (GSOI) has emerged as a new platform for three-dimensional (3D) photonicintegrated circuits (PICs). We report the first demonstration of GeSn dual-waveband resonant-cavity-enhanced photodetectors (RCE PDs) on GSOI platforms with resonance-enhanced responsivity at both...
| Main Authors: | , , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2021
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/151990 |
| _version_ | 1811679968757809152 |
|---|---|
| author | Chen, Qimiao Wu, Shaoteng Zhang, Lin Burt, Daniel Zhou, Hao Nam, Donguk Fan, Weijun Tan, Chuan Seng |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Chen, Qimiao Wu, Shaoteng Zhang, Lin Burt, Daniel Zhou, Hao Nam, Donguk Fan, Weijun Tan, Chuan Seng |
| author_sort | Chen, Qimiao |
| collection | NTU |
| description | Germanium-tin-on-insulator (GSOI) has emerged as
a new platform for three-dimensional (3D) photonicintegrated
circuits (PICs). We report the first demonstration
of GeSn dual-waveband resonant-cavity-enhanced
photodetectors (RCE PDs) on GSOI platforms with
resonance-enhanced responsivity at both the 2 μm and
1.55 μm bands. 10% Sn is introduced to the GeSn absorbing
layer to extend the detection wavelength to the
2 μm band. A vertical Fabry–Pérot cavity is designed
to enhance the responsivity. The measured responsivity
spectra show resonance peaks which cover a wide
wavelength range near both the 2 μm and conventional
telecommunication bands. This work demonstrates
that the GeSn dual-waveband RCE PDs on a GSOI platform
are promising for CMOS-compatible 3D PICs for
optoelectronic applications in 2 μm and telecommunication
bands. |
| first_indexed | 2024-10-01T03:17:35Z |
| format | Journal Article |
| id | ntu-10356/151990 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:17:35Z |
| publishDate | 2021 |
| record_format | dspace |
| spelling | ntu-10356/1519902021-08-12T08:36:29Z GeSn-on-insulator dual-waveband resonant-cavity-enhanced photodetectors at the 2 μm and 155 μm optical communication bands Chen, Qimiao Wu, Shaoteng Zhang, Lin Burt, Daniel Zhou, Hao Nam, Donguk Fan, Weijun Tan, Chuan Seng School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering Germanium-Tin Photodetector Semiconductor Germanium-tin-on-insulator (GSOI) has emerged as a new platform for three-dimensional (3D) photonicintegrated circuits (PICs). We report the first demonstration of GeSn dual-waveband resonant-cavity-enhanced photodetectors (RCE PDs) on GSOI platforms with resonance-enhanced responsivity at both the 2 μm and 1.55 μm bands. 10% Sn is introduced to the GeSn absorbing layer to extend the detection wavelength to the 2 μm band. A vertical Fabry–Pérot cavity is designed to enhance the responsivity. The measured responsivity spectra show resonance peaks which cover a wide wavelength range near both the 2 μm and conventional telecommunication bands. This work demonstrates that the GeSn dual-waveband RCE PDs on a GSOI platform are promising for CMOS-compatible 3D PICs for optoelectronic applications in 2 μm and telecommunication bands. Ministry of Education (MOE) National Research Foundation (NRF) Accepted version National Research Foundation Singapore (CRP Award NRF-CRP19-2017-01); Ministry of Education—Singapore (AcRF Tier 1 2019-T1-002-040 (RG147/19 (S))). 2021-08-12T08:36:29Z 2021-08-12T08:36:29Z 2021 Journal Article Chen, Q., Wu, S., Zhang, L., Burt, D., Zhou, H., Nam, D., Fan, W. & Tan, C. S. (2021). GeSn-on-insulator dual-waveband resonant-cavity-enhanced photodetectors at the 2 μm and 155 μm optical communication bands. Optics Letters, 46(15), 3809-3812. https://dx.doi.org/10.1364/OL.434044 0146-9592 https://hdl.handle.net/10356/151990 10.1364/OL.434044 15 46 3809 3812 en NRF–CRP19–2017–01 2019-T1-002-040 (RG147/19 (S)) Optics Letters © 2021 Optical Society of America. All rights reserved. This paper was published in Optics Letters and is made available with permission of Optical Society of America. application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering Germanium-Tin Photodetector Semiconductor Chen, Qimiao Wu, Shaoteng Zhang, Lin Burt, Daniel Zhou, Hao Nam, Donguk Fan, Weijun Tan, Chuan Seng GeSn-on-insulator dual-waveband resonant-cavity-enhanced photodetectors at the 2 μm and 155 μm optical communication bands |
| title | GeSn-on-insulator dual-waveband resonant-cavity-enhanced photodetectors at the 2 μm and 155 μm optical communication bands |
| title_full | GeSn-on-insulator dual-waveband resonant-cavity-enhanced photodetectors at the 2 μm and 155 μm optical communication bands |
| title_fullStr | GeSn-on-insulator dual-waveband resonant-cavity-enhanced photodetectors at the 2 μm and 155 μm optical communication bands |
| title_full_unstemmed | GeSn-on-insulator dual-waveband resonant-cavity-enhanced photodetectors at the 2 μm and 155 μm optical communication bands |
| title_short | GeSn-on-insulator dual-waveband resonant-cavity-enhanced photodetectors at the 2 μm and 155 μm optical communication bands |
| title_sort | gesn on insulator dual waveband resonant cavity enhanced photodetectors at the 2 μm and 155 μm optical communication bands |
| topic | Engineering::Electrical and electronic engineering Germanium-Tin Photodetector Semiconductor |
| url | https://hdl.handle.net/10356/151990 |
| work_keys_str_mv | AT chenqimiao gesnoninsulatordualwavebandresonantcavityenhancedphotodetectorsatthe2mmand155mmopticalcommunicationbands AT wushaoteng gesnoninsulatordualwavebandresonantcavityenhancedphotodetectorsatthe2mmand155mmopticalcommunicationbands AT zhanglin gesnoninsulatordualwavebandresonantcavityenhancedphotodetectorsatthe2mmand155mmopticalcommunicationbands AT burtdaniel gesnoninsulatordualwavebandresonantcavityenhancedphotodetectorsatthe2mmand155mmopticalcommunicationbands AT zhouhao gesnoninsulatordualwavebandresonantcavityenhancedphotodetectorsatthe2mmand155mmopticalcommunicationbands AT namdonguk gesnoninsulatordualwavebandresonantcavityenhancedphotodetectorsatthe2mmand155mmopticalcommunicationbands AT fanweijun gesnoninsulatordualwavebandresonantcavityenhancedphotodetectorsatthe2mmand155mmopticalcommunicationbands AT tanchuanseng gesnoninsulatordualwavebandresonantcavityenhancedphotodetectorsatthe2mmand155mmopticalcommunicationbands |