A RF-DC rectifier with dual voltage polarity self-biasing for wireless sensor node application
This paper presents an improvement on the RF-DC rectifier with the self-bias diode-connected MOS transistors to achieve a wide input power range. The proposed design utilized a dual voltage polarity to bias the rectifying PMOS and NMOS with a positive and negative DC potential respectively. This bia...
| Main Authors: | , , , , , , , , |
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| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
| Published: |
2021
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/152061 |
| _version_ | 1811681577302753280 |
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| author | Teo, Terence Boon Chiat Venkadasamy, Navaneethan Lim, Xian Yang Nardi, Utomo Liu, Ziming Tan, Chong Boon Seah, Bryan Yun Da Sit, Ji-Jon Siek, Liter |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Teo, Terence Boon Chiat Venkadasamy, Navaneethan Lim, Xian Yang Nardi, Utomo Liu, Ziming Tan, Chong Boon Seah, Bryan Yun Da Sit, Ji-Jon Siek, Liter |
| author_sort | Teo, Terence Boon Chiat |
| collection | NTU |
| description | This paper presents an improvement on the RF-DC rectifier with the self-bias diode-connected MOS transistors to achieve a wide input power range. The proposed design utilized a dual voltage polarity to bias the rectifying PMOS and NMOS with a positive and negative DC potential respectively. This biasing potential enables the gate of the transistor to be boosted above the output voltage or below the rectifier ground to minimize the leakage current. A proposed 3-stage rectifier design is simulated using a 55nm BCD technology and occupies an area of 0.064 mm 2 . The post-layout simulation results show a 75.3% power conversion efficiency (PCE) at -7dBm, -22.5dBm sensitivity and an input power range of 21.2dB when operating at the 900MHz input RF frequency with a 100k0 load. |
| first_indexed | 2024-10-01T03:43:09Z |
| format | Conference Paper |
| id | ntu-10356/152061 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:43:09Z |
| publishDate | 2021 |
| record_format | dspace |
| spelling | ntu-10356/1520612021-07-16T01:15:40Z A RF-DC rectifier with dual voltage polarity self-biasing for wireless sensor node application Teo, Terence Boon Chiat Venkadasamy, Navaneethan Lim, Xian Yang Nardi, Utomo Liu, Ziming Tan, Chong Boon Seah, Bryan Yun Da Sit, Ji-Jon Siek, Liter School of Electrical and Electronic Engineering 2021 IEEE International Symposium on Circuits and Systems (ISCAS) VIRTUS, IC Design Centre of Excellence Engineering::Electrical and electronic engineering CMOS RF Rectifier Energy Harvesting This paper presents an improvement on the RF-DC rectifier with the self-bias diode-connected MOS transistors to achieve a wide input power range. The proposed design utilized a dual voltage polarity to bias the rectifying PMOS and NMOS with a positive and negative DC potential respectively. This biasing potential enables the gate of the transistor to be boosted above the output voltage or below the rectifier ground to minimize the leakage current. A proposed 3-stage rectifier design is simulated using a 55nm BCD technology and occupies an area of 0.064 mm 2 . The post-layout simulation results show a 75.3% power conversion efficiency (PCE) at -7dBm, -22.5dBm sensitivity and an input power range of 21.2dB when operating at the 900MHz input RF frequency with a 100k0 load. The authors would like to thank GLOBALFOUNDRIES Singapore Pte Ltd for supporting this work. 2021-07-15T02:11:01Z 2021-07-15T02:11:01Z 2021 Conference Paper Teo, T. B. C., Venkadasamy, N., Lim, X. Y., Nardi, U., Liu, Z., Tan, C. B., Seah, B. Y. D., Sit, J. & Siek, L. (2021). A RF-DC rectifier with dual voltage polarity self-biasing for wireless sensor node application. 2021 IEEE International Symposium on Circuits and Systems (ISCAS). https://dx.doi.org/10.1109/ISCAS51556.2021.9401260 2158-1525 https://hdl.handle.net/10356/152061 10.1109/ISCAS51556.2021.9401260 en © 2021 Institute of Electrical and Electronics Engineers (IEEE). All rights reserved. |
| spellingShingle | Engineering::Electrical and electronic engineering CMOS RF Rectifier Energy Harvesting Teo, Terence Boon Chiat Venkadasamy, Navaneethan Lim, Xian Yang Nardi, Utomo Liu, Ziming Tan, Chong Boon Seah, Bryan Yun Da Sit, Ji-Jon Siek, Liter A RF-DC rectifier with dual voltage polarity self-biasing for wireless sensor node application |
| title | A RF-DC rectifier with dual voltage polarity self-biasing for wireless sensor node application |
| title_full | A RF-DC rectifier with dual voltage polarity self-biasing for wireless sensor node application |
| title_fullStr | A RF-DC rectifier with dual voltage polarity self-biasing for wireless sensor node application |
| title_full_unstemmed | A RF-DC rectifier with dual voltage polarity self-biasing for wireless sensor node application |
| title_short | A RF-DC rectifier with dual voltage polarity self-biasing for wireless sensor node application |
| title_sort | rf dc rectifier with dual voltage polarity self biasing for wireless sensor node application |
| topic | Engineering::Electrical and electronic engineering CMOS RF Rectifier Energy Harvesting |
| url | https://hdl.handle.net/10356/152061 |
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