Electronically tunable MOSFET-based resistor used in a variable gain amplifier or filter
We present a new design of an electronically tunable linear MOS resistor circuit that operates in the subthreshold saturation region, supported with mathematical derivations and simulation results using CSM0.13μm technology. For a given potential difference across the MOS resistor, its gate voltage...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
| Published: |
2021
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| Online Access: | https://hdl.handle.net/10356/152167 |
| _version_ | 1811682478053654528 |
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| author | Tan, Wei Lin Chang, Chip Hong Siek, Liter |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Tan, Wei Lin Chang, Chip Hong Siek, Liter |
| author_sort | Tan, Wei Lin |
| collection | NTU |
| description | We present a new design of an electronically tunable linear MOS resistor circuit that operates in the subthreshold saturation region, supported with mathematical derivations and simulation results using CSM0.13μm technology. For a given potential difference across the MOS resistor, its gate voltage will be automatically biased through feedback to provide the correct amount of current based on the desired resistance set through the bias current. In comparison with an existing design [1], the proposed design offers equal tunabilty with 36 less transistors for unidirectional current and 28 less transistors with one more bias current transistor for bidirectional current. A bias current ranging between 10nA to 100nA offers a tunable linear resistance between 20MΩ to 140MΩ. |
| first_indexed | 2024-10-01T03:57:28Z |
| format | Conference Paper |
| id | ntu-10356/152167 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:57:28Z |
| publishDate | 2021 |
| record_format | dspace |
| spelling | ntu-10356/1521672021-08-05T01:20:41Z Electronically tunable MOSFET-based resistor used in a variable gain amplifier or filter Tan, Wei Lin Chang, Chip Hong Siek, Liter School of Electrical and Electronic Engineering 2016 International Symposium on Integrated Circuits (ISIC) VIRTUS, IC Design Centre of Excellence Engineering::Electrical and electronic engineering Linearise Subthreshold Current Electronically Tunable Linear Resistor Automatic Biasing MOS Resistor We present a new design of an electronically tunable linear MOS resistor circuit that operates in the subthreshold saturation region, supported with mathematical derivations and simulation results using CSM0.13μm technology. For a given potential difference across the MOS resistor, its gate voltage will be automatically biased through feedback to provide the correct amount of current based on the desired resistance set through the bias current. In comparison with an existing design [1], the proposed design offers equal tunabilty with 36 less transistors for unidirectional current and 28 less transistors with one more bias current transistor for bidirectional current. A bias current ranging between 10nA to 100nA offers a tunable linear resistance between 20MΩ to 140MΩ. We would like to acknowledge Dr K H Wee for his idea on linearising a transistor in the subthreshold region, as well as Ms Ruiqi Ng for her assistance in the mathematical derivation. We would also like to thank Dr K H Wee, and Dr C L Kok for the discussion throughout this project. Lastly, we would like to thank URECA for sponsoring this project. 2021-08-05T01:18:57Z 2021-08-05T01:18:57Z 2017 Conference Paper Tan, W. L., Chang, C. H. & Siek, L. (2017). Electronically tunable MOSFET-based resistor used in a variable gain amplifier or filter. 2016 International Symposium on Integrated Circuits (ISIC), 1-4. https://dx.doi.org/10.1109/ISICIR.2016.7829715 9781467390194 https://hdl.handle.net/10356/152167 10.1109/ISICIR.2016.7829715 2-s2.0-85013857305 1 4 en © 2016 IEEE. All rights reserved. |
| spellingShingle | Engineering::Electrical and electronic engineering Linearise Subthreshold Current Electronically Tunable Linear Resistor Automatic Biasing MOS Resistor Tan, Wei Lin Chang, Chip Hong Siek, Liter Electronically tunable MOSFET-based resistor used in a variable gain amplifier or filter |
| title | Electronically tunable MOSFET-based resistor used in a variable gain amplifier or filter |
| title_full | Electronically tunable MOSFET-based resistor used in a variable gain amplifier or filter |
| title_fullStr | Electronically tunable MOSFET-based resistor used in a variable gain amplifier or filter |
| title_full_unstemmed | Electronically tunable MOSFET-based resistor used in a variable gain amplifier or filter |
| title_short | Electronically tunable MOSFET-based resistor used in a variable gain amplifier or filter |
| title_sort | electronically tunable mosfet based resistor used in a variable gain amplifier or filter |
| topic | Engineering::Electrical and electronic engineering Linearise Subthreshold Current Electronically Tunable Linear Resistor Automatic Biasing MOS Resistor |
| url | https://hdl.handle.net/10356/152167 |
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