Deposited poly-Si as on-demand linewidth compensator for on-chip Fabry-Perot interferometer and vertical linear variable optical filter bandpass and passband manipulation
Deep reactive ion etching (DRIE) is an important process for etching vertical structures for microelectromechanical systems. Due to the sidewall profile of some photoresists as well as effects from upstream processes, bulk micromachined structures, to a certain extent, could differ from expected. Co...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2021
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| Online Access: | https://hdl.handle.net/10356/152182 |
| _version_ | 1811694358156541952 |
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| author | Goh, Simon Chun Kiat Chen, Nan Shiau, Li Lynn Tay, Beng Kang Lee, ChengKuo Tan, Chuan Seng |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Goh, Simon Chun Kiat Chen, Nan Shiau, Li Lynn Tay, Beng Kang Lee, ChengKuo Tan, Chuan Seng |
| author_sort | Goh, Simon Chun Kiat |
| collection | NTU |
| description | Deep reactive ion etching (DRIE) is an important process for etching vertical structures for microelectromechanical systems. Due to the sidewall profile of some photoresists as well as effects from upstream processes, bulk micromachined structures, to a certain extent, could differ from expected. Concerning photonics applications, minute deviations from the intended design might alter its optical characteristics. The most popular approach is to introduce a compensation factor during mask design. However, such a method is not robust enough to accommodate batch variations due to varying process conditions. In one particular example specific to this work, the simulated passband for a Si-air Fabry–Perot interferometer configuration was 3.67 μm. However, post DRIE the passband was measured to be 3.40 μm. To resolve this discrepancy, linewidth compensation using low-pressure chemical vapor deposition (LPCVD) poly-Si is presented. When 170 and 194 nm of poly-Si were separately deposited, the passbands redshifted to 3.54 and 3.57 μm, respectively. With the LPCVD poly-Si layer being highly conformable, the full width half maximum remains unchanged at 80 nm. An on-chip linear variable optical filter was demonstrated with a compensation of 194 nm poly-Si. It was observed that the working range redshifted from 3.0–3.9 μm to 3.3–4.5 μm. |
| first_indexed | 2024-10-01T07:06:18Z |
| format | Journal Article |
| id | ntu-10356/152182 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:06:18Z |
| publishDate | 2021 |
| record_format | dspace |
| spelling | ntu-10356/1521822021-07-21T04:15:27Z Deposited poly-Si as on-demand linewidth compensator for on-chip Fabry-Perot interferometer and vertical linear variable optical filter bandpass and passband manipulation Goh, Simon Chun Kiat Chen, Nan Shiau, Li Lynn Tay, Beng Kang Lee, ChengKuo Tan, Chuan Seng School of Electrical and Electronic Engineering Excelitas Technologies Engineering::Electrical and electronic engineering Low-Velocity Oxyfuel Si-air Deep reactive ion etching (DRIE) is an important process for etching vertical structures for microelectromechanical systems. Due to the sidewall profile of some photoresists as well as effects from upstream processes, bulk micromachined structures, to a certain extent, could differ from expected. Concerning photonics applications, minute deviations from the intended design might alter its optical characteristics. The most popular approach is to introduce a compensation factor during mask design. However, such a method is not robust enough to accommodate batch variations due to varying process conditions. In one particular example specific to this work, the simulated passband for a Si-air Fabry–Perot interferometer configuration was 3.67 μm. However, post DRIE the passband was measured to be 3.40 μm. To resolve this discrepancy, linewidth compensation using low-pressure chemical vapor deposition (LPCVD) poly-Si is presented. When 170 and 194 nm of poly-Si were separately deposited, the passbands redshifted to 3.54 and 3.57 μm, respectively. With the LPCVD poly-Si layer being highly conformable, the full width half maximum remains unchanged at 80 nm. An on-chip linear variable optical filter was demonstrated with a compensation of 194 nm poly-Si. It was observed that the working range redshifted from 3.0–3.9 μm to 3.3–4.5 μm. Economic Development Board (EDB) SCKG is grateful for the EDB-IPP postgraduate scholarship dispensed by Economic Development Board of Singapore. Authors are grateful to KaiLiang Chuan (Excelitas Technologies, Singapore), Yuan Hsi Chan and Rambhatla Murthy (Excelitas, Montreal). SCKG would like to thank Shurui Wang (Park Systems) and Tom Tiwald (J A Woollam) for their assistance in AFM and ellipsometry measurement and analysis, respectively. The authors would like to thank Goh Constance and Pang Alvin for taking time to proofread this manuscript. 2021-07-21T04:15:27Z 2021-07-21T04:15:27Z 2019 Journal Article Goh, S. C. K., Chen, N., Shiau, L. L., Tay, B. K., Lee, C. & Tan, C. S. (2019). Deposited poly-Si as on-demand linewidth compensator for on-chip Fabry-Perot interferometer and vertical linear variable optical filter bandpass and passband manipulation. Journal of Micromechanics and Microengineering, 29(4), 047001-. https://dx.doi.org/10.1088/1361-6439/ab035c 0960-1317 https://hdl.handle.net/10356/152182 10.1088/1361-6439/ab035c 2-s2.0-85064079341 4 29 047001 en Journal of Micromechanics and Microengineering © 2019 IOP Publishing Ltd. All rights reserved. |
| spellingShingle | Engineering::Electrical and electronic engineering Low-Velocity Oxyfuel Si-air Goh, Simon Chun Kiat Chen, Nan Shiau, Li Lynn Tay, Beng Kang Lee, ChengKuo Tan, Chuan Seng Deposited poly-Si as on-demand linewidth compensator for on-chip Fabry-Perot interferometer and vertical linear variable optical filter bandpass and passband manipulation |
| title | Deposited poly-Si as on-demand linewidth compensator for on-chip Fabry-Perot interferometer and vertical linear variable optical filter bandpass and passband manipulation |
| title_full | Deposited poly-Si as on-demand linewidth compensator for on-chip Fabry-Perot interferometer and vertical linear variable optical filter bandpass and passband manipulation |
| title_fullStr | Deposited poly-Si as on-demand linewidth compensator for on-chip Fabry-Perot interferometer and vertical linear variable optical filter bandpass and passband manipulation |
| title_full_unstemmed | Deposited poly-Si as on-demand linewidth compensator for on-chip Fabry-Perot interferometer and vertical linear variable optical filter bandpass and passband manipulation |
| title_short | Deposited poly-Si as on-demand linewidth compensator for on-chip Fabry-Perot interferometer and vertical linear variable optical filter bandpass and passband manipulation |
| title_sort | deposited poly si as on demand linewidth compensator for on chip fabry perot interferometer and vertical linear variable optical filter bandpass and passband manipulation |
| topic | Engineering::Electrical and electronic engineering Low-Velocity Oxyfuel Si-air |
| url | https://hdl.handle.net/10356/152182 |
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