Development of resistive random access memory for next-generation embedded non-volatile memory application
Resistive random access memory (RRAM) is a promising candidate for the next-generation non-volatile memory owing to its simple structure, fast read/write speed, low power consumption, high memory density, and complementary metal oxide semiconductor (CMOS) compatibility. However, many challenges such...
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| Format: | Thesis-Doctor of Philosophy |
| Language: | English |
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Nanyang Technological University
2021
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| Online Access: | https://hdl.handle.net/10356/152482 |