Operando direct observation of filament formation in resistive switching devices enabled by a topological transformation molecule
Conductive filaments (CFs) play a critical role in the mechanism of resistive random-access memory (ReRAM) devices. However, in situ detection and visualization of the precise location of CFs are still key challenges. We demonstrate for the first time the use of a π-conjugated molecule which can tra...
| Main Authors: | , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2021
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| Online Access: | https://hdl.handle.net/10356/153464 |
| _version_ | 1826111418436419584 |
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| author | Hou, Kunqi Chen, Shuai Zhou, Cheng Nguyen, Linh Lan Dananjaya, Putu Andhita Duchamp, Martial Bazan, Guillermo C. Lew, Wen Siang Leong, Wei Lin |
| author2 | School of Physical and Mathematical Sciences |
| author_facet | School of Physical and Mathematical Sciences Hou, Kunqi Chen, Shuai Zhou, Cheng Nguyen, Linh Lan Dananjaya, Putu Andhita Duchamp, Martial Bazan, Guillermo C. Lew, Wen Siang Leong, Wei Lin |
| author_sort | Hou, Kunqi |
| collection | NTU |
| description | Conductive filaments (CFs) play a critical role in the mechanism of resistive random-access memory (ReRAM) devices. However, in situ detection and visualization of the precise location of CFs are still key challenges. We demonstrate for the first time the use of a π-conjugated molecule which can transform
between its twisted and planar states upon localized Joule heating generated within filament regions, thus reflecting the locations of the underlying CFs. Customized patterns of CFs were induced and observed by the π-conjugated molecule layer, which confirmed the hypothesis. Additionally, statistical studies on filaments distribution were conducted to study the effect of device sizes and bottom electrode heights, which serves to enhance the understanding of switching behavior and their variability at device level. Therefore, this approach has great potential in aiding the development of ReRAM technology. |
| first_indexed | 2024-10-01T02:50:23Z |
| format | Journal Article |
| id | ntu-10356/153464 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:50:23Z |
| publishDate | 2021 |
| record_format | dspace |
| spelling | ntu-10356/1534642023-02-28T19:53:57Z Operando direct observation of filament formation in resistive switching devices enabled by a topological transformation molecule Hou, Kunqi Chen, Shuai Zhou, Cheng Nguyen, Linh Lan Dananjaya, Putu Andhita Duchamp, Martial Bazan, Guillermo C. Lew, Wen Siang Leong, Wei Lin School of Physical and Mathematical Sciences School of Electrical and Electronic Engineering School of Materials Science and Engineering National University of Singapore Centre for Micro-/Nano-electronics (NOVITAS) Engineering::Electrical and electronic engineering::Nanoelectronics Engineering::Materials::Functional materials ReRAM π-Conjugated Molecule Conductive filaments (CFs) play a critical role in the mechanism of resistive random-access memory (ReRAM) devices. However, in situ detection and visualization of the precise location of CFs are still key challenges. We demonstrate for the first time the use of a π-conjugated molecule which can transform between its twisted and planar states upon localized Joule heating generated within filament regions, thus reflecting the locations of the underlying CFs. Customized patterns of CFs were induced and observed by the π-conjugated molecule layer, which confirmed the hypothesis. Additionally, statistical studies on filaments distribution were conducted to study the effect of device sizes and bottom electrode heights, which serves to enhance the understanding of switching behavior and their variability at device level. Therefore, this approach has great potential in aiding the development of ReRAM technology. Agency for Science, Technology and Research (A*STAR) Ministry of Education (MOE) Accepted version The authors acknowledge funding support from A*STAR AME IAF-ICP (grant no. I1801E0030) grant. This work is also supported by Ministry of Education (MOE) under AcRF Tier 2 grants (2019-T2-2-106, 2019-T2-2-066) and the National Robotics Programme (W1925d0106). 2021-12-05T06:25:11Z 2021-12-05T06:25:11Z 2021 Journal Article Hou, K., Chen, S., Zhou, C., Nguyen, L. L., Dananjaya, P. A., Duchamp, M., Bazan, G. C., Lew, W. S. & Leong, W. L. (2021). Operando direct observation of filament formation in resistive switching devices enabled by a topological transformation molecule. Nano Letters, 21(21), 9262-9269. https://dx.doi.org/10.1021/acs.nanolett.1c03180 1530-6984 https://hdl.handle.net/10356/153464 10.1021/acs.nanolett.1c03180 21 21 9262 9269 en I1801E0030 2019-T2-2-106 2019-T2-2-066 W1925d0106 Nano Letters This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.1c03180. application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering::Nanoelectronics Engineering::Materials::Functional materials ReRAM π-Conjugated Molecule Hou, Kunqi Chen, Shuai Zhou, Cheng Nguyen, Linh Lan Dananjaya, Putu Andhita Duchamp, Martial Bazan, Guillermo C. Lew, Wen Siang Leong, Wei Lin Operando direct observation of filament formation in resistive switching devices enabled by a topological transformation molecule |
| title | Operando direct observation of filament formation in resistive switching devices enabled by a topological transformation molecule |
| title_full | Operando direct observation of filament formation in resistive switching devices enabled by a topological transformation molecule |
| title_fullStr | Operando direct observation of filament formation in resistive switching devices enabled by a topological transformation molecule |
| title_full_unstemmed | Operando direct observation of filament formation in resistive switching devices enabled by a topological transformation molecule |
| title_short | Operando direct observation of filament formation in resistive switching devices enabled by a topological transformation molecule |
| title_sort | operando direct observation of filament formation in resistive switching devices enabled by a topological transformation molecule |
| topic | Engineering::Electrical and electronic engineering::Nanoelectronics Engineering::Materials::Functional materials ReRAM π-Conjugated Molecule |
| url | https://hdl.handle.net/10356/153464 |
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