Operando direct observation of filament formation in resistive switching devices enabled by a topological transformation molecule

Operando direct observation of filament formation in resistive switching devices enabled by a topological transformation molecule

Conductive filaments (CFs) play a critical role in the mechanism of resistive random-access memory (ReRAM) devices. However, in situ detection and visualization of the precise location of CFs are still key challenges. We demonstrate for the first time the use of a π-conjugated molecule which can tra...

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Bibliographic Details
Main Authors: Hou, Kunqi, Chen, Shuai, Zhou, Cheng, Nguyen, Linh Lan, Dananjaya, Putu Andhita, Duchamp, Martial, Bazan, Guillermo C., Lew, Wen Siang, Leong, Wei Lin
Other Authors: School of Physical and Mathematical Sciences
Format: Journal Article
Language:English
Published: 2021
Subjects:
Engineering::Electrical and electronic engineering::Nanoelectronics
Engineering::Materials::Functional materials
ReRAM
π-Conjugated Molecule
Online Access:https://hdl.handle.net/10356/153464

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