Enhancing the piezoelectric modulus of wurtzite AlN by ion beam strain engineering
The piezoelectric modulus of wurtzite aluminum nitride (AlN) is a critical material parameter for electrical components, ultimately contributing to the energy efficiency and achievable bandwidth of modern communication devices. Here, we demonstrate that the introduction of metallic point-defects (Ti...
| Main Authors: | , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2021
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/153531 |
| _version_ | 1811690455228743680 |
|---|---|
| author | Fiedler, Holger Leveneur, Jérôme Mitchell, David R. G. Arulkumaran, Subramaniam Ng, Geok Ing Alphones, Arokiaswami Kennedy, John |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Fiedler, Holger Leveneur, Jérôme Mitchell, David R. G. Arulkumaran, Subramaniam Ng, Geok Ing Alphones, Arokiaswami Kennedy, John |
| author_sort | Fiedler, Holger |
| collection | NTU |
| description | The piezoelectric modulus of wurtzite aluminum nitride (AlN) is a critical material parameter for electrical components, ultimately contributing to the energy efficiency and achievable bandwidth of modern communication devices. Here, we demonstrate that the introduction of metallic point-defects (Ti, Zr, Hf) improves the piezoelectric modulus of as-received, unstrained, epitaxially grown AlN. The metals are incorporated by ion implantation with an acceleration energy of 30 keV to a fluence of 1015 at cm-2, which causes an elongation along the wurtzite c-axis. The stored internal strain energy increases the piezoelectric polarization of the thin AlN layer. This can equivalently be described by an enhancement of the piezoelectric modulus d33. The incorporation of 0.1 at. % Ti enhances the piezoelectric modulus by ∼30%; significantly exceeding gains obtained by alloying with the same amount of Sc. |
| first_indexed | 2024-10-01T06:04:16Z |
| format | Journal Article |
| id | ntu-10356/153531 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:04:16Z |
| publishDate | 2021 |
| record_format | dspace |
| spelling | ntu-10356/1535312022-01-01T20:12:25Z Enhancing the piezoelectric modulus of wurtzite AlN by ion beam strain engineering Fiedler, Holger Leveneur, Jérôme Mitchell, David R. G. Arulkumaran, Subramaniam Ng, Geok Ing Alphones, Arokiaswami Kennedy, John School of Electrical and Electronic Engineering Temasek Laboratories @ NTU Engineering::Electrical and electronic engineering Aluminum Nitride Energy Efficiency The piezoelectric modulus of wurtzite aluminum nitride (AlN) is a critical material parameter for electrical components, ultimately contributing to the energy efficiency and achievable bandwidth of modern communication devices. Here, we demonstrate that the introduction of metallic point-defects (Ti, Zr, Hf) improves the piezoelectric modulus of as-received, unstrained, epitaxially grown AlN. The metals are incorporated by ion implantation with an acceleration energy of 30 keV to a fluence of 1015 at cm-2, which causes an elongation along the wurtzite c-axis. The stored internal strain energy increases the piezoelectric polarization of the thin AlN layer. This can equivalently be described by an enhancement of the piezoelectric modulus d33. The incorporation of 0.1 at. % Ti enhances the piezoelectric modulus by ∼30%; significantly exceeding gains obtained by alloying with the same amount of Sc. Published version The research was financed by the New Zealand Ministry for Business, Innovation, and Employment (No. C05X1712). This work used the JEOL JEM-ARM200F and FEI NanoLab G3 CX both funded by the Australian Research Council (ARC)—Linkage, Infrastructure, Equipment and Facilities (LIEF) Grant (Nos. LE120100104 and LE160100063, respectively) and located at the University of Wollongong Electron Microscopy Centre (UoW EMC), Australia. 2021-12-06T13:40:21Z 2021-12-06T13:40:21Z 2021 Journal Article Fiedler, H., Leveneur, J., Mitchell, D. R. G., Arulkumaran, S., Ng, G. I., Alphones, A. & Kennedy, J. (2021). Enhancing the piezoelectric modulus of wurtzite AlN by ion beam strain engineering. Applied Physics Letters, 118(1), 012108-. https://dx.doi.org/10.1063/5.0031047 0003-6951 https://hdl.handle.net/10356/153531 10.1063/5.0031047 2-s2.0-85099277291 1 118 012108 en Applied Physics Letters © 2021 Author(s). All rights reserved. This paper was published by AIP Publishing in Applied Physics Letters and is made available with permission of Author(s). application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering Aluminum Nitride Energy Efficiency Fiedler, Holger Leveneur, Jérôme Mitchell, David R. G. Arulkumaran, Subramaniam Ng, Geok Ing Alphones, Arokiaswami Kennedy, John Enhancing the piezoelectric modulus of wurtzite AlN by ion beam strain engineering |
| title | Enhancing the piezoelectric modulus of wurtzite AlN by ion beam strain engineering |
| title_full | Enhancing the piezoelectric modulus of wurtzite AlN by ion beam strain engineering |
| title_fullStr | Enhancing the piezoelectric modulus of wurtzite AlN by ion beam strain engineering |
| title_full_unstemmed | Enhancing the piezoelectric modulus of wurtzite AlN by ion beam strain engineering |
| title_short | Enhancing the piezoelectric modulus of wurtzite AlN by ion beam strain engineering |
| title_sort | enhancing the piezoelectric modulus of wurtzite aln by ion beam strain engineering |
| topic | Engineering::Electrical and electronic engineering Aluminum Nitride Energy Efficiency |
| url | https://hdl.handle.net/10356/153531 |
| work_keys_str_mv | AT fiedlerholger enhancingthepiezoelectricmodulusofwurtzitealnbyionbeamstrainengineering AT leveneurjerome enhancingthepiezoelectricmodulusofwurtzitealnbyionbeamstrainengineering AT mitchelldavidrg enhancingthepiezoelectricmodulusofwurtzitealnbyionbeamstrainengineering AT arulkumaransubramaniam enhancingthepiezoelectricmodulusofwurtzitealnbyionbeamstrainengineering AT nggeoking enhancingthepiezoelectricmodulusofwurtzitealnbyionbeamstrainengineering AT alphonesarokiaswami enhancingthepiezoelectricmodulusofwurtzitealnbyionbeamstrainengineering AT kennedyjohn enhancingthepiezoelectricmodulusofwurtzitealnbyionbeamstrainengineering |