Comparative analysis of IGBT parameters variation under different accelerated aging tests
Power semiconductor devices are vulnerable to thermomechanical fatigue due to temperature cycling caused by system load profile and external climatic conditions. As the reliability performance of power semiconductor devices in power converter systems is determined by this temperature stress, acceler...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2021
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| Online Access: | https://hdl.handle.net/10356/154475 |
| _version_ | 1826115080376287232 |
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| author | Sathik, Mohamed Halick Mohamed Sundararajan, Prasanth Sasongko, Firman Pou, Josep Natarajan, Sivakumar |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Sathik, Mohamed Halick Mohamed Sundararajan, Prasanth Sasongko, Firman Pou, Josep Natarajan, Sivakumar |
| author_sort | Sathik, Mohamed Halick Mohamed |
| collection | NTU |
| description | Power semiconductor devices are vulnerable to thermomechanical fatigue due to temperature cycling caused by system load profile and external climatic conditions. As the reliability performance of power semiconductor devices in power converter systems is determined by this temperature stress, accelerated power or thermal cycling test are used in this article to emulate the temperature stress. The failure mechanisms due to temperature stress can be studied, and it also helps to develop the lifetime estimation model for power semiconductor devices. In the past, active power cycling and passive thermal cycling tests are investigated separately to develop the failure mechanism model based on the device's electrical parameter changes and scanning electron microscopic (SEM) analysis. However, there is no detailed report on, how different temperature stresses emulated by dc, pulsewidth modulation (PWM) power cycling, and thermal cycling affects the device physically, and how much changes it introduces in the device's electrical parameters. Therefore, this article presents an experimental investigation of active dc, PWM power cycling and passive thermal cycling approaches on 1.2-kV 50-A fast trench insulated gate bipolar junction transistor (IGBT) devices. The device electrical parameters, such as ON-state voltage, threshold voltage, gate current, gate voltage, and thermal resistance, were monitored during the study to classify the effects of temperature stress produced by dc, PWM power cycling, and thermal cycling on these electrical parameters. |
| first_indexed | 2024-10-01T03:49:41Z |
| format | Journal Article |
| id | ntu-10356/154475 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:49:41Z |
| publishDate | 2021 |
| record_format | dspace |
| spelling | ntu-10356/1544752021-12-23T05:35:08Z Comparative analysis of IGBT parameters variation under different accelerated aging tests Sathik, Mohamed Halick Mohamed Sundararajan, Prasanth Sasongko, Firman Pou, Josep Natarajan, Sivakumar School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering Dc Cycling Junction Temperature Power semiconductor devices are vulnerable to thermomechanical fatigue due to temperature cycling caused by system load profile and external climatic conditions. As the reliability performance of power semiconductor devices in power converter systems is determined by this temperature stress, accelerated power or thermal cycling test are used in this article to emulate the temperature stress. The failure mechanisms due to temperature stress can be studied, and it also helps to develop the lifetime estimation model for power semiconductor devices. In the past, active power cycling and passive thermal cycling tests are investigated separately to develop the failure mechanism model based on the device's electrical parameter changes and scanning electron microscopic (SEM) analysis. However, there is no detailed report on, how different temperature stresses emulated by dc, pulsewidth modulation (PWM) power cycling, and thermal cycling affects the device physically, and how much changes it introduces in the device's electrical parameters. Therefore, this article presents an experimental investigation of active dc, PWM power cycling and passive thermal cycling approaches on 1.2-kV 50-A fast trench insulated gate bipolar junction transistor (IGBT) devices. The device electrical parameters, such as ON-state voltage, threshold voltage, gate current, gate voltage, and thermal resistance, were monitored during the study to classify the effects of temperature stress produced by dc, PWM power cycling, and thermal cycling on these electrical parameters. National Research Foundation (NRF) This work was supported by the Rolls-Royce@NTU Corporate Lab through the National Research Foundation (NRF) Singapore under the Corp Lab@University Scheme. 2021-12-23T05:35:08Z 2021-12-23T05:35:08Z 2020 Journal Article Sathik, M. H. M., Sundararajan, P., Sasongko, F., Pou, J. & Natarajan, S. (2020). Comparative analysis of IGBT parameters variation under different accelerated aging tests. IEEE Transactions On Electron Devices, 67(3), 1098-1105. https://dx.doi.org/10.1109/TED.2020.2968617 0018-9383 https://hdl.handle.net/10356/154475 10.1109/TED.2020.2968617 2-s2.0-85080853454 3 67 1098 1105 en IEEE Transactions on Electron Devices © 2020 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission. |
| spellingShingle | Engineering::Electrical and electronic engineering Dc Cycling Junction Temperature Sathik, Mohamed Halick Mohamed Sundararajan, Prasanth Sasongko, Firman Pou, Josep Natarajan, Sivakumar Comparative analysis of IGBT parameters variation under different accelerated aging tests |
| title | Comparative analysis of IGBT parameters variation under different accelerated aging tests |
| title_full | Comparative analysis of IGBT parameters variation under different accelerated aging tests |
| title_fullStr | Comparative analysis of IGBT parameters variation under different accelerated aging tests |
| title_full_unstemmed | Comparative analysis of IGBT parameters variation under different accelerated aging tests |
| title_short | Comparative analysis of IGBT parameters variation under different accelerated aging tests |
| title_sort | comparative analysis of igbt parameters variation under different accelerated aging tests |
| topic | Engineering::Electrical and electronic engineering Dc Cycling Junction Temperature |
| url | https://hdl.handle.net/10356/154475 |
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