Influences of surface charges and gap width between p-type and n-type semiconductors on charge pumping
It has been reported that charges can be pumped out of an intermittently contacted p-n (or Schottky) junction, accompanied with mechanical to electric power conversion [1]. The amount of charge measured in the circuit, however, was observed to be 3–4 orders of magnitudes smaller than the space charg...
Main Authors: | Deng, Shuo, Xu, Ran, Li, Min, Li, Lijie, Wang, Zhong Lin, Zhang, Qing |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Journal Article |
Language: | English |
Published: |
2022
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/154720 |
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