Ligand exchange and impurity doping in 2D CdSe nanoplatelet thin films and their applications
The effects of halide-ligand exchange and Cu and Ag doping are studied on structural, optical, and electrical properties of four monolayer CdSe nanoplatelet (NPL) and NPL thin films. Combinational study shows that NH4Cl-treatment on CdSe NPL and NPL thin films show tetragonal lattice distortion of N...
| Main Authors: | , , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2022
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| Online Access: | https://hdl.handle.net/10356/154995 |
| _version_ | 1826117572527915008 |
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| author | Lee, Woo Seok Kang, Yoon-Gu Sharma, Manoj Lee, Yong Min Jeon, Sanghyun Sharma, Ashma Demir, Hilmi Volkan Han, Myung Joon Koh, Weon-Kyu Oh, Soong Ju |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Lee, Woo Seok Kang, Yoon-Gu Sharma, Manoj Lee, Yong Min Jeon, Sanghyun Sharma, Ashma Demir, Hilmi Volkan Han, Myung Joon Koh, Weon-Kyu Oh, Soong Ju |
| author_sort | Lee, Woo Seok |
| collection | NTU |
| description | The effects of halide-ligand exchange and Cu and Ag doping are studied on structural, optical, and electrical properties of four monolayer CdSe nanoplatelet (NPL) and NPL thin films. Combinational study shows that NH4Cl-treatment on CdSe NPL and NPL thin films show tetragonal lattice distortion of NPL, side-to-side attachment between NPLs, bathochromic shift in absorption spectra, and complete quenching of band-edge and dopant-induced emissions. First-principle calculations reveal that Cl creates states below valence band maximum while Ag and Cu dopants create acceptor-like states, explaining the change of their optical property. Field-effect transistors are fabricated to investigate the effect of doping and reduced interplatelet distance on electrical properties of CdSe NPL thin films, demonstrating Cu and Ag dopants mitigate n-type character of CdSe NPL thin films. Temperature-dependent electrical characterization is conducted to further understand charge transport behavior depending on the existence of dopants. This work provides scientific information on the influence of surface chemistry and impurity doping on quantum confined semiconductors and new directions for the design of high-performance nanomaterial-based electronic and optoelectronic devices. |
| first_indexed | 2024-10-01T04:29:49Z |
| format | Journal Article |
| id | ntu-10356/154995 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:29:49Z |
| publishDate | 2022 |
| record_format | dspace |
| spelling | ntu-10356/1549952023-02-28T19:34:58Z Ligand exchange and impurity doping in 2D CdSe nanoplatelet thin films and their applications Lee, Woo Seok Kang, Yoon-Gu Sharma, Manoj Lee, Yong Min Jeon, Sanghyun Sharma, Ashma Demir, Hilmi Volkan Han, Myung Joon Koh, Weon-Kyu Oh, Soong Ju School of Electrical and Electronic Engineering School of Physical and Mathematical Sciences LUMINOUS! Centre of Excellence for Semiconductor Lighting & Displays Science::Physics Engineering::Electrical and electronic engineering Charge Transport Doping The effects of halide-ligand exchange and Cu and Ag doping are studied on structural, optical, and electrical properties of four monolayer CdSe nanoplatelet (NPL) and NPL thin films. Combinational study shows that NH4Cl-treatment on CdSe NPL and NPL thin films show tetragonal lattice distortion of NPL, side-to-side attachment between NPLs, bathochromic shift in absorption spectra, and complete quenching of band-edge and dopant-induced emissions. First-principle calculations reveal that Cl creates states below valence band maximum while Ag and Cu dopants create acceptor-like states, explaining the change of their optical property. Field-effect transistors are fabricated to investigate the effect of doping and reduced interplatelet distance on electrical properties of CdSe NPL thin films, demonstrating Cu and Ag dopants mitigate n-type character of CdSe NPL thin films. Temperature-dependent electrical characterization is conducted to further understand charge transport behavior depending on the existence of dopants. This work provides scientific information on the influence of surface chemistry and impurity doping on quantum confined semiconductors and new directions for the design of high-performance nanomaterial-based electronic and optoelectronic devices. Ministry of Education (MOE) National Research Foundation (NRF) Accepted version The authors would like to acknowledge the financial support from Singapore National Research Foundation under the Program of NRF-NRFI2016-08, the Competitive Research Program NRF-CRP14-2014-03, and Singapore Ministry of Education Tier 1 grant (MOE-RG62/20). The authors acknowledge the financial support from National Science Foundation the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2019R1C1C1003319), Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science, ICT and Future Planning (NRF-2018M3D1A1059001), and Korea University Future Research Grant. H.V.D. also acknowledges support from TUBA. Y.G.K. and M.J.H. were supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (2021R1A2C1009303). 2022-01-26T03:10:09Z 2022-01-26T03:10:09Z 2022 Journal Article Lee, W. S., Kang, Y., Sharma, M., Lee, Y. M., Jeon, S., Sharma, A., Demir, H. V., Han, M. J., Koh, W. & Oh, S. J. (2022). Ligand exchange and impurity doping in 2D CdSe nanoplatelet thin films and their applications. Advanced Electronic Materials, 8(1), 2100739-. https://dx.doi.org/10.1002/aelm.202100739 2199-160X https://hdl.handle.net/10356/154995 10.1002/aelm.202100739 2-s2.0-85115397093 1 8 2100739 en NRF-NRFI2016-08 NRF-CRP14-2014-03 RG62/20 Advanced Electronic Materials This is the peer reviewed version of the following article: Lee, W. S., Kang, Y., Sharma, M., Lee, Y. M., Jeon, S., Sharma, A., Demir, H. V., Han, M. J., Koh, W. & Oh, S. J. (2022). Ligand exchange and impurity doping in 2D CdSe nanoplatelet thin films and their applications. Advanced Electronic Materials, 8(1), 2100739-, which has been published in final form at https://doi.org/10.1002/aelm.202100739. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. application/pdf |
| spellingShingle | Science::Physics Engineering::Electrical and electronic engineering Charge Transport Doping Lee, Woo Seok Kang, Yoon-Gu Sharma, Manoj Lee, Yong Min Jeon, Sanghyun Sharma, Ashma Demir, Hilmi Volkan Han, Myung Joon Koh, Weon-Kyu Oh, Soong Ju Ligand exchange and impurity doping in 2D CdSe nanoplatelet thin films and their applications |
| title | Ligand exchange and impurity doping in 2D CdSe nanoplatelet thin films and their applications |
| title_full | Ligand exchange and impurity doping in 2D CdSe nanoplatelet thin films and their applications |
| title_fullStr | Ligand exchange and impurity doping in 2D CdSe nanoplatelet thin films and their applications |
| title_full_unstemmed | Ligand exchange and impurity doping in 2D CdSe nanoplatelet thin films and their applications |
| title_short | Ligand exchange and impurity doping in 2D CdSe nanoplatelet thin films and their applications |
| title_sort | ligand exchange and impurity doping in 2d cdse nanoplatelet thin films and their applications |
| topic | Science::Physics Engineering::Electrical and electronic engineering Charge Transport Doping |
| url | https://hdl.handle.net/10356/154995 |
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