Engineered ultraviolet InGaN/AlGaN multiple-quantum-well structures for maximizing cathodoluminescence efficiency
We demonstrate a systematic way to understand and select the accelerating voltage for maximizing cathodoluminescence (CL) by correlating the carrier diffusion length with the efficiency of ultraviolet InGaN/GaN multiple quantum wells (MQWs). We showed that the MQWs absorption benefits from the absor...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2022
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| Online Access: | https://hdl.handle.net/10356/154996 |
| _version_ | 1826122724683022336 |
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| author | Zheng, Haiyang Sharma, Vijay Kumar Tsai, Ping Chieh Zhang, Yiping Lu, Shunpeng Zhang, Xueliang Tan, Swee Tiam Demir, Hilmi Volkan |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Zheng, Haiyang Sharma, Vijay Kumar Tsai, Ping Chieh Zhang, Yiping Lu, Shunpeng Zhang, Xueliang Tan, Swee Tiam Demir, Hilmi Volkan |
| author_sort | Zheng, Haiyang |
| collection | NTU |
| description | We demonstrate a systematic way to understand and select the accelerating voltage for maximizing cathodoluminescence (CL) by correlating the carrier diffusion length with the efficiency of ultraviolet InGaN/GaN multiple quantum wells (MQWs). We showed that the MQWs absorption benefits from the absorbed energy within the diffusion length below the MQWs. With this understanding, we have achieved a good agreement on the dependence of acceleration voltage and QW number in InGaN/GaN MQW structures between the experimental data and the Monte-Carlo (CASINO) simulations. These findings indicate that CL-based UV generation from carefully engineered III-N MWQ structures with an appropriate number of QWs is highly promising. The understanding and application of this work can be extended to electron-beam pumped devices emitting in deep-UV (200-280 nm) wavelengths. |
| first_indexed | 2024-10-01T05:52:52Z |
| format | Journal Article |
| id | ntu-10356/154996 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:52:52Z |
| publishDate | 2022 |
| record_format | dspace |
| spelling | ntu-10356/1549962023-02-28T19:34:11Z Engineered ultraviolet InGaN/AlGaN multiple-quantum-well structures for maximizing cathodoluminescence efficiency Zheng, Haiyang Sharma, Vijay Kumar Tsai, Ping Chieh Zhang, Yiping Lu, Shunpeng Zhang, Xueliang Tan, Swee Tiam Demir, Hilmi Volkan School of Electrical and Electronic Engineering School of Physical and Mathematical Sciences LUMINOUS! Centre of Excellence for Semiconductor Lighting & Displays Science::Physics Engineering::Electrical and electronic engineering Electron Beams Semiconductors We demonstrate a systematic way to understand and select the accelerating voltage for maximizing cathodoluminescence (CL) by correlating the carrier diffusion length with the efficiency of ultraviolet InGaN/GaN multiple quantum wells (MQWs). We showed that the MQWs absorption benefits from the absorbed energy within the diffusion length below the MQWs. With this understanding, we have achieved a good agreement on the dependence of acceleration voltage and QW number in InGaN/GaN MQW structures between the experimental data and the Monte-Carlo (CASINO) simulations. These findings indicate that CL-based UV generation from carefully engineered III-N MWQ structures with an appropriate number of QWs is highly promising. The understanding and application of this work can be extended to electron-beam pumped devices emitting in deep-UV (200-280 nm) wavelengths. Published version 2022-01-26T02:55:20Z 2022-01-26T02:55:20Z 2022 Journal Article Zheng, H., Sharma, V. K., Tsai, P. C., Zhang, Y., Lu, S., Zhang, X., Tan, S. T. & Demir, H. V. (2022). Engineered ultraviolet InGaN/AlGaN multiple-quantum-well structures for maximizing cathodoluminescence efficiency. AIP Advances, 12(1), 015005-. https://dx.doi.org/10.1063/6.0001262 2158-3226 https://hdl.handle.net/10356/154996 10.1063/6.0001262 1 12 015005 en AIP Advances © 2022 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). application/pdf |
| spellingShingle | Science::Physics Engineering::Electrical and electronic engineering Electron Beams Semiconductors Zheng, Haiyang Sharma, Vijay Kumar Tsai, Ping Chieh Zhang, Yiping Lu, Shunpeng Zhang, Xueliang Tan, Swee Tiam Demir, Hilmi Volkan Engineered ultraviolet InGaN/AlGaN multiple-quantum-well structures for maximizing cathodoluminescence efficiency |
| title | Engineered ultraviolet InGaN/AlGaN multiple-quantum-well structures for maximizing cathodoluminescence efficiency |
| title_full | Engineered ultraviolet InGaN/AlGaN multiple-quantum-well structures for maximizing cathodoluminescence efficiency |
| title_fullStr | Engineered ultraviolet InGaN/AlGaN multiple-quantum-well structures for maximizing cathodoluminescence efficiency |
| title_full_unstemmed | Engineered ultraviolet InGaN/AlGaN multiple-quantum-well structures for maximizing cathodoluminescence efficiency |
| title_short | Engineered ultraviolet InGaN/AlGaN multiple-quantum-well structures for maximizing cathodoluminescence efficiency |
| title_sort | engineered ultraviolet ingan algan multiple quantum well structures for maximizing cathodoluminescence efficiency |
| topic | Science::Physics Engineering::Electrical and electronic engineering Electron Beams Semiconductors |
| url | https://hdl.handle.net/10356/154996 |
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