Uncovering the indium filament revolution in transparent bipolar ito/siox/ito resistive switching memories
Transparent resistive switching random access memory (ReRAM) is of interest for the future integrated invisible circuitry. However, poor understanding of its working mechanism in transparent ReRAMs with the indium tin oxide (ITO) electrode is still a critical problem and will hinder its widespread a...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2022
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| Online Access: | https://hdl.handle.net/10356/155166 |
| _version_ | 1811676482928377856 |
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| author | Qian, Kai Han, Xu Li, Huakai Chen, Tupei Lee, Pooi See |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Qian, Kai Han, Xu Li, Huakai Chen, Tupei Lee, Pooi See |
| author_sort | Qian, Kai |
| collection | NTU |
| description | Transparent resistive switching random access memory (ReRAM) is of interest for the future integrated invisible circuitry. However, poor understanding of its working mechanism in transparent ReRAMs with the indium tin oxide (ITO) electrode is still a critical problem and will hinder its widespread applications. To reveal the actual working mechanism in transparent ReRAMs with the ITO electrode, we investigate the transparent ITO/SiOx/ITO memory devices (∼82% transmittance in the visible region) and compare it with ITO/SiOx/Au memory devices, which both can exhibit reproducible bipolar switching. The indium (In) filament evolution, which accounts for the bipolar switching behaviors in the ITO/SiOx/ITO (or Au) memories, is directly observed using transmission electron microscopy on samples with different memory states (electroformed, ON, and OFF). These studies uncover the microscopic mechanism behind the bipolar switching in SiOx-based ReRAM devices with the ITO electrode, providing a general guidance for the design of high-performance ReRAMs with large scalability and high endurance. |
| first_indexed | 2024-10-01T02:22:11Z |
| format | Journal Article |
| id | ntu-10356/155166 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:22:11Z |
| publishDate | 2022 |
| record_format | dspace |
| spelling | ntu-10356/1551662022-02-11T04:43:13Z Uncovering the indium filament revolution in transparent bipolar ito/siox/ito resistive switching memories Qian, Kai Han, Xu Li, Huakai Chen, Tupei Lee, Pooi See School of Electrical and Electronic Engineering School of Materials Science and Engineering Engineering::Electrical and electronic engineering Transparent ReRAM Bipolar Switching Transparent resistive switching random access memory (ReRAM) is of interest for the future integrated invisible circuitry. However, poor understanding of its working mechanism in transparent ReRAMs with the indium tin oxide (ITO) electrode is still a critical problem and will hinder its widespread applications. To reveal the actual working mechanism in transparent ReRAMs with the ITO electrode, we investigate the transparent ITO/SiOx/ITO memory devices (∼82% transmittance in the visible region) and compare it with ITO/SiOx/Au memory devices, which both can exhibit reproducible bipolar switching. The indium (In) filament evolution, which accounts for the bipolar switching behaviors in the ITO/SiOx/ITO (or Au) memories, is directly observed using transmission electron microscopy on samples with different memory states (electroformed, ON, and OFF). These studies uncover the microscopic mechanism behind the bipolar switching in SiOx-based ReRAM devices with the ITO electrode, providing a general guidance for the design of high-performance ReRAMs with large scalability and high endurance. Agency for Science, Technology and Research (A*STAR) National Research Foundation (NRF) This work is supported by the National Research Foundation Competitive Research Programme (grant no. NRF-CRP13- 2014-02) and the RIE2020 ASTAR AME IAF-ICP Grant (No. I1801E0030). K.Q. acknowledges the “Qilu young scholar” program (grant no. 11500089963022) of Shandong University, China. 2022-02-11T04:42:16Z 2022-02-11T04:42:16Z 2020 Journal Article Qian, K., Han, X., Li, H., Chen, T. & Lee, P. S. (2020). Uncovering the indium filament revolution in transparent bipolar ito/siox/ito resistive switching memories. ACS Applied Materials and Interfaces, 12(4), 4579-4585. https://dx.doi.org/10.1021/acsami.9b16325 1944-8244 https://hdl.handle.net/10356/155166 10.1021/acsami.9b16325 31891483 2-s2.0-85078664487 4 12 4579 4585 en I1801E0030 NRF-CRP13- 2014-02 ACS Applied Materials and Interfaces © 2019 American Chemical Society. All rights reserved. |
| spellingShingle | Engineering::Electrical and electronic engineering Transparent ReRAM Bipolar Switching Qian, Kai Han, Xu Li, Huakai Chen, Tupei Lee, Pooi See Uncovering the indium filament revolution in transparent bipolar ito/siox/ito resistive switching memories |
| title | Uncovering the indium filament revolution in transparent bipolar ito/siox/ito resistive switching memories |
| title_full | Uncovering the indium filament revolution in transparent bipolar ito/siox/ito resistive switching memories |
| title_fullStr | Uncovering the indium filament revolution in transparent bipolar ito/siox/ito resistive switching memories |
| title_full_unstemmed | Uncovering the indium filament revolution in transparent bipolar ito/siox/ito resistive switching memories |
| title_short | Uncovering the indium filament revolution in transparent bipolar ito/siox/ito resistive switching memories |
| title_sort | uncovering the indium filament revolution in transparent bipolar ito siox ito resistive switching memories |
| topic | Engineering::Electrical and electronic engineering Transparent ReRAM Bipolar Switching |
| url | https://hdl.handle.net/10356/155166 |
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