2D Cairo pentagonal PdPS : air-stable anisotropic ternary semiconductor with high optoelectronic performance
Pentagonal 2D materials as a new member in the 2D material family have attracted increasing attention due to the exotic physical properties originating from the unique Cairo pentagonal tiling topology. Herein, the penta-PdPS atomic layers as a new air-stable 2D semiconductor with the unique pucke...
| Main Authors: | , , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2022
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/155874 |
| _version_ | 1824455838718230528 |
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| author | Duan, Ruihuan He, Yanchao Zhu, Chao Wang, Xiaowei Zhu, Chao Zhao, Xiaoxu Zhang, Zhonghan Zeng, Qingsheng Deng, Ya Xu, Manzhang Liu, Zheng |
| author2 | School of Materials Science and Engineering |
| author_facet | School of Materials Science and Engineering Duan, Ruihuan He, Yanchao Zhu, Chao Wang, Xiaowei Zhu, Chao Zhao, Xiaoxu Zhang, Zhonghan Zeng, Qingsheng Deng, Ya Xu, Manzhang Liu, Zheng |
| author_sort | Duan, Ruihuan |
| collection | NTU |
| description | Pentagonal 2D materials as a new member in the 2D material family have
attracted increasing attention due to the exotic physical properties originating
from the unique Cairo pentagonal tiling topology. Herein, the penta-PdPS
atomic layers as a new air-stable 2D semiconductor with the unique puckered pentagonal low-symmetry structure are successfully exfoliated from
bulk crystals grown via chemical vapor transport (CVT). Notably, 2D pentaPdPS exhibits outstanding electronic and optoelectronic performance under
650 nm laser: high electron mobility of ≈208 cm2 V−1 s−1, an ultrahigh on/off
ratio of ≈108, a high photoresponsivity of 5.2 × 104 A W−1, a high photogain
of 1.0 × 105, an ultrahigh detectivity of 1.0 × 1013 Jones, respectively. Significantly, the exceptional puckered pentagonal atomic structure of 2D PdPS
makes it strong in-plane anisotropy in optical, electronic, and optoelectronic
properties, demonstrating a sizeable anisotropic ratio of carrier mobility and
photocurrent with the value of up to 3.9 and 2.3, respectively. These excellent
properties make 2D Cairo Pentagonal PdPS a potential candidate in nanoelectronics, optoelectronics, polarized-nanoelectronics, which will significantly
promote the development of 2D materials. |
| first_indexed | 2025-02-19T03:44:34Z |
| format | Journal Article |
| id | ntu-10356/155874 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2025-02-19T03:44:34Z |
| publishDate | 2022 |
| record_format | dspace |
| spelling | ntu-10356/1558742022-03-25T01:09:57Z 2D Cairo pentagonal PdPS : air-stable anisotropic ternary semiconductor with high optoelectronic performance Duan, Ruihuan He, Yanchao Zhu, Chao Wang, Xiaowei Zhu, Chao Zhao, Xiaoxu Zhang, Zhonghan Zeng, Qingsheng Deng, Ya Xu, Manzhang Liu, Zheng School of Materials Science and Engineering School of Electrical and Electronic Engineering CNRS International NTU THALES Research Alliances Engineering::Materials 2D Semiconductors Field-Effect Transistors Pentagonal 2D materials as a new member in the 2D material family have attracted increasing attention due to the exotic physical properties originating from the unique Cairo pentagonal tiling topology. Herein, the penta-PdPS atomic layers as a new air-stable 2D semiconductor with the unique puckered pentagonal low-symmetry structure are successfully exfoliated from bulk crystals grown via chemical vapor transport (CVT). Notably, 2D pentaPdPS exhibits outstanding electronic and optoelectronic performance under 650 nm laser: high electron mobility of ≈208 cm2 V−1 s−1, an ultrahigh on/off ratio of ≈108, a high photoresponsivity of 5.2 × 104 A W−1, a high photogain of 1.0 × 105, an ultrahigh detectivity of 1.0 × 1013 Jones, respectively. Significantly, the exceptional puckered pentagonal atomic structure of 2D PdPS makes it strong in-plane anisotropy in optical, electronic, and optoelectronic properties, demonstrating a sizeable anisotropic ratio of carrier mobility and photocurrent with the value of up to 3.9 and 2.3, respectively. These excellent properties make 2D Cairo Pentagonal PdPS a potential candidate in nanoelectronics, optoelectronics, polarized-nanoelectronics, which will significantly promote the development of 2D materials. Agency for Science, Technology and Research (A*STAR) National Research Foundation (NRF) Z.L. acknowledges supports from Singapore National Research Foundation – Competitive Research Program NRF-CRP22-2019-0007 and NRF-CRP21-2018-0007. This research was also supported by A*STAR under its AME IRG Grant (Project No. A2083c0052). 2022-03-25T01:09:56Z 2022-03-25T01:09:56Z 2022 Journal Article Duan, R., He, Y., Zhu, C., Wang, X., Zhu, C., Zhao, X., Zhang, Z., Zeng, Q., Deng, Y., Xu, M. & Liu, Z. (2022). 2D Cairo pentagonal PdPS : air-stable anisotropic ternary semiconductor with high optoelectronic performance. Advanced Functional Materials. https://dx.doi.org/10.1002/adfm.202113255 1616-301X https://hdl.handle.net/10356/155874 10.1002/adfm.202113255 en NRF-CRP22-2019-0007 NRF-CRP21-2018-0007 A2083c0052 Advanced Functional Materials © 2022 Wiley-VCH GmbH. All rights reserved. |
| spellingShingle | Engineering::Materials 2D Semiconductors Field-Effect Transistors Duan, Ruihuan He, Yanchao Zhu, Chao Wang, Xiaowei Zhu, Chao Zhao, Xiaoxu Zhang, Zhonghan Zeng, Qingsheng Deng, Ya Xu, Manzhang Liu, Zheng 2D Cairo pentagonal PdPS : air-stable anisotropic ternary semiconductor with high optoelectronic performance |
| title | 2D Cairo pentagonal PdPS : air-stable anisotropic ternary semiconductor with high optoelectronic performance |
| title_full | 2D Cairo pentagonal PdPS : air-stable anisotropic ternary semiconductor with high optoelectronic performance |
| title_fullStr | 2D Cairo pentagonal PdPS : air-stable anisotropic ternary semiconductor with high optoelectronic performance |
| title_full_unstemmed | 2D Cairo pentagonal PdPS : air-stable anisotropic ternary semiconductor with high optoelectronic performance |
| title_short | 2D Cairo pentagonal PdPS : air-stable anisotropic ternary semiconductor with high optoelectronic performance |
| title_sort | 2d cairo pentagonal pdps air stable anisotropic ternary semiconductor with high optoelectronic performance |
| topic | Engineering::Materials 2D Semiconductors Field-Effect Transistors |
| url | https://hdl.handle.net/10356/155874 |
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