In0.3Ga0.7As heterojunction bipolar transistor grown on GeSi substrate for high-frequency application
We report an In0.3Ga0.7As HBT device grown on a 200 mm Si wafer using GeSi as virtual starting substrate and InAlAs as the compositionally graded buffer layer from GaAs to In0.3Ga0.7As lattice constant. A DC gain, emitter-base, and base-collector ideality factors of 10, 1.43, and 1.56, respectively,...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2022
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| Online Access: | https://hdl.handle.net/10356/156029 |
| _version_ | 1826110833918214144 |
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| author | Loke, Wan Khai Wang, Yue Gao, Yu Khaw, Lina Lee, Kenneth Eng Kian Tan, Chuan Seng Fitzgerald, Eugene A. Yoon, Soon Fatt |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Loke, Wan Khai Wang, Yue Gao, Yu Khaw, Lina Lee, Kenneth Eng Kian Tan, Chuan Seng Fitzgerald, Eugene A. Yoon, Soon Fatt |
| author_sort | Loke, Wan Khai |
| collection | NTU |
| description | We report an In0.3Ga0.7As HBT device grown on a 200 mm Si wafer using GeSi as virtual starting substrate and InAlAs as the compositionally graded buffer layer from GaAs to In0.3Ga0.7As lattice constant. A DC gain, emitter-base, and base-collector ideality factors of 10, 1.43, and 1.56, respectively, are obtained for a device with an emitter area of 40×50µm2. Small-signal simulation of an In0.3Ga0.7As HBT device with 2x8 µm2 emitter area shows that current gain cutoff frequency (fT) and maximum cut-off frequency (fMax), of 50 GHz and 220 GHz, respectively, can be achieved with base doping and layer thickness of 2×1018cm-3 and 30 nm, respectively. |
| first_indexed | 2024-10-01T02:40:40Z |
| format | Journal Article |
| id | ntu-10356/156029 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:40:40Z |
| publishDate | 2022 |
| record_format | dspace |
| spelling | ntu-10356/1560292022-03-31T06:15:00Z In0.3Ga0.7As heterojunction bipolar transistor grown on GeSi substrate for high-frequency application Loke, Wan Khai Wang, Yue Gao, Yu Khaw, Lina Lee, Kenneth Eng Kian Tan, Chuan Seng Fitzgerald, Eugene A. Yoon, Soon Fatt School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering Heterojunction Bipolar Transistors III-V and CMOS Integration InGaAs Germanium We report an In0.3Ga0.7As HBT device grown on a 200 mm Si wafer using GeSi as virtual starting substrate and InAlAs as the compositionally graded buffer layer from GaAs to In0.3Ga0.7As lattice constant. A DC gain, emitter-base, and base-collector ideality factors of 10, 1.43, and 1.56, respectively, are obtained for a device with an emitter area of 40×50µm2. Small-signal simulation of an In0.3Ga0.7As HBT device with 2x8 µm2 emitter area shows that current gain cutoff frequency (fT) and maximum cut-off frequency (fMax), of 50 GHz and 220 GHz, respectively, can be achieved with base doping and layer thickness of 2×1018cm-3 and 30 nm, respectively. Ministry of Education (MOE) National Research Foundation (NRF) Submitted/Accepted version This work was supported by the National Research Foundation Singapore through the Singapore MIT Alliance for Research and Technology’s Low Energy Electronic Systems IRG and MOE AcRF Tier-2 T2EP50121-0001. 2022-03-31T06:15:00Z 2022-03-31T06:15:00Z 2022 Journal Article Loke, W. K., Wang, Y., Gao, Y., Khaw, L., Lee, K. E. K., Tan, C. S., Fitzgerald, E. A. & Yoon, S. F. (2022). In0.3Ga0.7As heterojunction bipolar transistor grown on GeSi substrate for high-frequency application. Materials Science in Semiconductor Processing, 146, 106663-. https://dx.doi.org/10.1016/j.mssp.2022.106663 1369-8001 https://hdl.handle.net/10356/156029 10.1016/j.mssp.2022.106663 146 106663 en MOE AcRF Tier-2 T2EP50121-0001 Materials Science in Semiconductor Processing © 2022 Elsevier Ltd. All rights reserved. This paper was published in Materials Science in Semiconductor Processing and is made available with permission of Elsevier Ltd. application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering Heterojunction Bipolar Transistors III-V and CMOS Integration InGaAs Germanium Loke, Wan Khai Wang, Yue Gao, Yu Khaw, Lina Lee, Kenneth Eng Kian Tan, Chuan Seng Fitzgerald, Eugene A. Yoon, Soon Fatt In0.3Ga0.7As heterojunction bipolar transistor grown on GeSi substrate for high-frequency application |
| title | In0.3Ga0.7As heterojunction bipolar transistor grown on GeSi substrate for high-frequency application |
| title_full | In0.3Ga0.7As heterojunction bipolar transistor grown on GeSi substrate for high-frequency application |
| title_fullStr | In0.3Ga0.7As heterojunction bipolar transistor grown on GeSi substrate for high-frequency application |
| title_full_unstemmed | In0.3Ga0.7As heterojunction bipolar transistor grown on GeSi substrate for high-frequency application |
| title_short | In0.3Ga0.7As heterojunction bipolar transistor grown on GeSi substrate for high-frequency application |
| title_sort | in0 3ga0 7as heterojunction bipolar transistor grown on gesi substrate for high frequency application |
| topic | Engineering::Electrical and electronic engineering Heterojunction Bipolar Transistors III-V and CMOS Integration InGaAs Germanium |
| url | https://hdl.handle.net/10356/156029 |
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