In0.3Ga0.7As heterojunction bipolar transistor grown on GeSi substrate for high-frequency application
We report an In0.3Ga0.7As HBT device grown on a 200 mm Si wafer using GeSi as virtual starting substrate and InAlAs as the compositionally graded buffer layer from GaAs to In0.3Ga0.7As lattice constant. A DC gain, emitter-base, and base-collector ideality factors of 10, 1.43, and 1.56, respectively,...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2022
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/156029 |