Strongly out-of-equilibrium simulations for electron Boltzmann transport equation using modal discontinuous Galerkina approach
In this study, we present simulations of strongly out-of-equilibrium conditions for the one-dimensional electron Boltzmann transport equation (BTE) in semiconductor devices. An explicit modal discontinuous Galerkin method is employed to solve the electron BTE along with the simplest collisional mode...
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| Format: | Journal Article |
| Language: | English |
| Published: |
2022
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| Online Access: | https://hdl.handle.net/10356/156111 |
| _version_ | 1824455135545262080 |
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| author | Singh, Satyvir Battiato, Marco |
| author2 | School of Physical and Mathematical Sciences |
| author_facet | School of Physical and Mathematical Sciences Singh, Satyvir Battiato, Marco |
| author_sort | Singh, Satyvir |
| collection | NTU |
| description | In this study, we present simulations of strongly out-of-equilibrium conditions for the one-dimensional electron Boltzmann transport equation (BTE) in semiconductor devices. An explicit modal discontinuous Galerkin method is employed to solve the electron BTE along with the simplest collisional model–relaxation time approximation. The electron BTE system is discretized in momentum and time, and applied to the description of the dynamics of non-linear electron transport under a strong static electric field. A third-order explicit SSP-RK scheme is adopted for the temporal discretization of the resulting semi-discrete ODE. For the steady-state electron BTE, the analytical solutions are derived at low and high electric fields which are used to validate the numerical approach. The computed solution show a good agreement with derived analytic solution in wide range of tested parameters and regimes. An extensive range of numerical simulations has also been performed to investigate the impact of exploited flow parameters on the electron BTE solutions. Ultimately, these results predict that the modal DG approach is particularly effective in treating the strongly out-of-equilibrium regimes encountered like in ultrafast transport dynamics. |
| first_indexed | 2025-02-19T03:33:24Z |
| format | Journal Article |
| id | ntu-10356/156111 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2025-02-19T03:33:24Z |
| publishDate | 2022 |
| record_format | dspace |
| spelling | ntu-10356/1561112022-05-01T02:30:14Z Strongly out-of-equilibrium simulations for electron Boltzmann transport equation using modal discontinuous Galerkina approach Singh, Satyvir Battiato, Marco School of Physical and Mathematical Sciences Science::Physics Modal Discontinuous Galerkin Electron Boltzmann Transport In this study, we present simulations of strongly out-of-equilibrium conditions for the one-dimensional electron Boltzmann transport equation (BTE) in semiconductor devices. An explicit modal discontinuous Galerkin method is employed to solve the electron BTE along with the simplest collisional model–relaxation time approximation. The electron BTE system is discretized in momentum and time, and applied to the description of the dynamics of non-linear electron transport under a strong static electric field. A third-order explicit SSP-RK scheme is adopted for the temporal discretization of the resulting semi-discrete ODE. For the steady-state electron BTE, the analytical solutions are derived at low and high electric fields which are used to validate the numerical approach. The computed solution show a good agreement with derived analytic solution in wide range of tested parameters and regimes. An extensive range of numerical simulations has also been performed to investigate the impact of exploited flow parameters on the electron BTE solutions. Ultimately, these results predict that the modal DG approach is particularly effective in treating the strongly out-of-equilibrium regimes encountered like in ultrafast transport dynamics. Nanyang Technological University The authors would like to acknowledge the financial support of the NAP-SUG Grant program funded by the Nanyang Technological University, Singapore. 2022-04-21T08:57:09Z 2022-04-21T08:57:09Z 2020 Journal Article Singh, S. & Battiato, M. (2020). Strongly out-of-equilibrium simulations for electron Boltzmann transport equation using modal discontinuous Galerkina approach. International Journal of Applied and Computational Mathematics, 6(5), 133-. https://dx.doi.org/10.1007/s40819-020-00887-2 2349-5103 https://hdl.handle.net/10356/156111 10.1007/s40819-020-00887-2 2-s2.0-85089838998 5 6 133 en NAP-SUP M408074 International Journal of Applied and Computational Mathematics © 2020 Springer Nature India Private Limited. All rights reserved. |
| spellingShingle | Science::Physics Modal Discontinuous Galerkin Electron Boltzmann Transport Singh, Satyvir Battiato, Marco Strongly out-of-equilibrium simulations for electron Boltzmann transport equation using modal discontinuous Galerkina approach |
| title | Strongly out-of-equilibrium simulations for electron Boltzmann transport equation using modal discontinuous Galerkina approach |
| title_full | Strongly out-of-equilibrium simulations for electron Boltzmann transport equation using modal discontinuous Galerkina approach |
| title_fullStr | Strongly out-of-equilibrium simulations for electron Boltzmann transport equation using modal discontinuous Galerkina approach |
| title_full_unstemmed | Strongly out-of-equilibrium simulations for electron Boltzmann transport equation using modal discontinuous Galerkina approach |
| title_short | Strongly out-of-equilibrium simulations for electron Boltzmann transport equation using modal discontinuous Galerkina approach |
| title_sort | strongly out of equilibrium simulations for electron boltzmann transport equation using modal discontinuous galerkina approach |
| topic | Science::Physics Modal Discontinuous Galerkin Electron Boltzmann Transport |
| url | https://hdl.handle.net/10356/156111 |
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