Enhanced GeSn microdisk lasers directly released on Si
GeSn alloys are promising candidates for complementary metal-oxide- semiconductor-compatible, tunable lasers. Relaxation of residual compressive strain in epitaxial GeSn has recently shown promise in improving the lasing performance. However, the suspended device configuration that is thus far intr...
| Main Authors: | , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2022
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/156381 |
| _version_ | 1811693173530951680 |
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| author | Kim, Youngmin Assali, Simone Burt, Daniel Jung, Yongduck Joo, Hyo-Jun Chen, Melvina Ikonic, Zoran Moutanabbir, Oussama Nam, Donguk |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Kim, Youngmin Assali, Simone Burt, Daniel Jung, Yongduck Joo, Hyo-Jun Chen, Melvina Ikonic, Zoran Moutanabbir, Oussama Nam, Donguk |
| author_sort | Kim, Youngmin |
| collection | NTU |
| description | GeSn alloys are promising candidates for complementary metal-oxide- semiconductor-compatible, tunable lasers. Relaxation of residual compressive strain in epitaxial GeSn has recently shown promise in improving the lasing performance. However, the suspended device configuration that is thus
far introduced to relax the strain is destined to limit heat dissipation, thus hindering the device performance. Herein is demonstrated that strain-free GeSn microdisk laser devices fully released on Si outperform the canonical suspended devices. This approach allows to simultaneously relax the limiting compressive strain while offering excellent thermal conduction. Optical simulations confirm that, despite a relatively small refractive index contrast between GeSn and Si, optical confinement in strain-free GeSn optical cavities on Si is superior to that in conventional strain-free GeSn cavities suspended in the air. Moreover, thermal simulations indicate a negligible temperature increase in the device. Conversely, the temperature in the suspended devices increases substantially reaching, for instance, 120 K at a base temperature of 75 K under the employed optical pumping conditions. Such improvements enable increasing the operation temperature by ≈40 K and reducing the lasing threshold by 30%. This approach lays the groundwork to implement new designs in the quest for room temperature GeSn lasers on Si. |
| first_indexed | 2024-10-01T06:47:28Z |
| format | Journal Article |
| id | ntu-10356/156381 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:47:28Z |
| publishDate | 2022 |
| record_format | dspace |
| spelling | ntu-10356/1563812022-05-06T08:06:05Z Enhanced GeSn microdisk lasers directly released on Si Kim, Youngmin Assali, Simone Burt, Daniel Jung, Yongduck Joo, Hyo-Jun Chen, Melvina Ikonic, Zoran Moutanabbir, Oussama Nam, Donguk School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics Lasers Microdisks GeSn alloys are promising candidates for complementary metal-oxide- semiconductor-compatible, tunable lasers. Relaxation of residual compressive strain in epitaxial GeSn has recently shown promise in improving the lasing performance. However, the suspended device configuration that is thus far introduced to relax the strain is destined to limit heat dissipation, thus hindering the device performance. Herein is demonstrated that strain-free GeSn microdisk laser devices fully released on Si outperform the canonical suspended devices. This approach allows to simultaneously relax the limiting compressive strain while offering excellent thermal conduction. Optical simulations confirm that, despite a relatively small refractive index contrast between GeSn and Si, optical confinement in strain-free GeSn optical cavities on Si is superior to that in conventional strain-free GeSn cavities suspended in the air. Moreover, thermal simulations indicate a negligible temperature increase in the device. Conversely, the temperature in the suspended devices increases substantially reaching, for instance, 120 K at a base temperature of 75 K under the employed optical pumping conditions. Such improvements enable increasing the operation temperature by ≈40 K and reducing the lasing threshold by 30%. This approach lays the groundwork to implement new designs in the quest for room temperature GeSn lasers on Si. Agency for Science, Technology and Research (A*STAR) Ministry of Education (MOE) National Research Foundation (NRF) The work carried out in Montréal was supported by Natural Science and Engineering Research Council of Canada (Discovery, SPG, and CRD Grants), Canada Research Chairs, Canada Foundation for Innovation, Mitacs, PRIMA Québec, and Defence Canada (Innovation for Defence Excellence and Security, IDEaS). The research performed at Nanyang Technological University was supported by Ministry of Education, Singapore, under grant AcRF TIER 1 2019-T1-002-050 (RG 148/19 (S)). The research of the project was also supported by Ministry of Education, Singapore, under grant AcRF TIER 2 (MOE2018-T2-2-011 (S)). This work was also supported by National Research Foundation of Singapore through the Competitive Research Program (NRF-CRP19-2017-01). This work was also supported by National Research Foundation of Singapore through the NRF-ANR Joint Grant (NRF2018-NRF-ANR009 TIGER). This work was also supported by the iGrant of Singapore A*STAR AME IRG (A2083c0053). 2022-05-06T08:06:05Z 2022-05-06T08:06:05Z 2022 Journal Article Kim, Y., Assali, S., Burt, D., Jung, Y., Joo, H., Chen, M., Ikonic, Z., Moutanabbir, O. & Nam, D. (2022). Enhanced GeSn microdisk lasers directly released on Si. Advanced Optical Materials, 10(2), 2101213-. https://dx.doi.org/10.1002/adom.202101213 2195-1071 https://hdl.handle.net/10356/156381 10.1002/adom.202101213 2 10 2101213 en 2019-T1-002-050 (RG148/19 (S)) MOE2018-T2-2-011 (S) NRF-CRP19-2017-01 NRF2018-NRF-ANR009 TIGER A2083c0053 Advanced Optical Materials © 2021 Wiley-VCH GmbH. All rights reserved. |
| spellingShingle | Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics Lasers Microdisks Kim, Youngmin Assali, Simone Burt, Daniel Jung, Yongduck Joo, Hyo-Jun Chen, Melvina Ikonic, Zoran Moutanabbir, Oussama Nam, Donguk Enhanced GeSn microdisk lasers directly released on Si |
| title | Enhanced GeSn microdisk lasers directly released on Si |
| title_full | Enhanced GeSn microdisk lasers directly released on Si |
| title_fullStr | Enhanced GeSn microdisk lasers directly released on Si |
| title_full_unstemmed | Enhanced GeSn microdisk lasers directly released on Si |
| title_short | Enhanced GeSn microdisk lasers directly released on Si |
| title_sort | enhanced gesn microdisk lasers directly released on si |
| topic | Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics Lasers Microdisks |
| url | https://hdl.handle.net/10356/156381 |
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