Novel CGS hole transport layer for perovskite solar cells
Over the last one-decade perovskite solar cell has shown promising improvements in their efficiency. However, despite the tremendous potential, its stability has been a real challenge to overcome. Due to their better stability, the use of inorganic hole transport layers (HTLs) in perovskite solar ce...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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Nanyang Technological University
2022
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| Online Access: | https://hdl.handle.net/10356/156735 |
| _version_ | 1811682212472422400 |
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| author | Darmawan, Michael Putra |
| author2 | Lydia Helena Wong |
| author_facet | Lydia Helena Wong Darmawan, Michael Putra |
| author_sort | Darmawan, Michael Putra |
| collection | NTU |
| description | Over the last one-decade perovskite solar cell has shown promising improvements in their efficiency. However, despite the tremendous potential, its stability has been a real challenge to overcome. Due to their better stability, the use of inorganic hole transport layers (HTLs) in perovskite solar cells (PSCs) has increased the hope for its commercialization. However, one of the main issues currently experienced for inorganic HTLs is the poor quality of the HTL/perovskite interface. This subsequently leads to inefficient charge extraction and transport, negatively affecting the power conversion efficiency (PCE), and the lifetime of the device. Sulfur based compounds have been shown to improve the interface quality and supplement the growth of perovskite film, which reduces interfacial recombination. This project used CuGaS2 (CGS) film as a hole transport layer in perovskite solar cells. The effects of indium and aluminium doping in CGS (In-CGS and Al-CGS) were investigated to improve CGS hole-transporting properties, which include valence band maximum (VBM) matching, conductivity and band gap. XRD and PL spectroscopy of the perovskite film grown on CGS-based HTLs indicated the presence of a better-quality perovskite film compared to the one deposited on FTO. Finally, it was observed that 10% indium doping improved the device efficiency of the CGS HTL based devices from 5.82 to 7.90%. |
| first_indexed | 2024-10-01T03:53:15Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/156735 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:53:15Z |
| publishDate | 2022 |
| publisher | Nanyang Technological University |
| record_format | dspace |
| spelling | ntu-10356/1567352022-04-23T13:20:38Z Novel CGS hole transport layer for perovskite solar cells Darmawan, Michael Putra Lydia Helena Wong School of Materials Science and Engineering CREATE LydiaWong@ntu.edu.sg Engineering::Materials::Energy materials Over the last one-decade perovskite solar cell has shown promising improvements in their efficiency. However, despite the tremendous potential, its stability has been a real challenge to overcome. Due to their better stability, the use of inorganic hole transport layers (HTLs) in perovskite solar cells (PSCs) has increased the hope for its commercialization. However, one of the main issues currently experienced for inorganic HTLs is the poor quality of the HTL/perovskite interface. This subsequently leads to inefficient charge extraction and transport, negatively affecting the power conversion efficiency (PCE), and the lifetime of the device. Sulfur based compounds have been shown to improve the interface quality and supplement the growth of perovskite film, which reduces interfacial recombination. This project used CuGaS2 (CGS) film as a hole transport layer in perovskite solar cells. The effects of indium and aluminium doping in CGS (In-CGS and Al-CGS) were investigated to improve CGS hole-transporting properties, which include valence band maximum (VBM) matching, conductivity and band gap. XRD and PL spectroscopy of the perovskite film grown on CGS-based HTLs indicated the presence of a better-quality perovskite film compared to the one deposited on FTO. Finally, it was observed that 10% indium doping improved the device efficiency of the CGS HTL based devices from 5.82 to 7.90%. Bachelor of Engineering (Materials Engineering) 2022-04-23T07:26:59Z 2022-04-23T07:26:59Z 2022 Final Year Project (FYP) Darmawan, M. P. (2022). Novel CGS hole transport layer for perovskite solar cells. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/156735 https://hdl.handle.net/10356/156735 en application/pdf Nanyang Technological University |
| spellingShingle | Engineering::Materials::Energy materials Darmawan, Michael Putra Novel CGS hole transport layer for perovskite solar cells |
| title | Novel CGS hole transport layer for perovskite solar cells |
| title_full | Novel CGS hole transport layer for perovskite solar cells |
| title_fullStr | Novel CGS hole transport layer for perovskite solar cells |
| title_full_unstemmed | Novel CGS hole transport layer for perovskite solar cells |
| title_short | Novel CGS hole transport layer for perovskite solar cells |
| title_sort | novel cgs hole transport layer for perovskite solar cells |
| topic | Engineering::Materials::Energy materials |
| url | https://hdl.handle.net/10356/156735 |
| work_keys_str_mv | AT darmawanmichaelputra novelcgsholetransportlayerforperovskitesolarcells |