Raman scattering study of GeSn under <1 0 0> and <1 1 0> uniaxial stress
The application of strain into GeSn alloys can effectively modulate the band structures, thus creating novel electronic and photonic devices. Raman spectroscopy is a powerful tool for characterizing strain; however, the lack of Raman coefficient makes it difficult for accurate determination of strai...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2022
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| Online Access: | https://hdl.handle.net/10356/156824 |
| _version_ | 1826129772717015040 |
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| author | An, Shu Tai, Yeh-Chen Lee, Kuo-Chih Shin, Sang-Ho Cheng, H. H. Chang, Guo-En Kim, Munho |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering An, Shu Tai, Yeh-Chen Lee, Kuo-Chih Shin, Sang-Ho Cheng, H. H. Chang, Guo-En Kim, Munho |
| author_sort | An, Shu |
| collection | NTU |
| description | The application of strain into GeSn alloys can effectively modulate the band structures, thus creating novel electronic and photonic devices. Raman spectroscopy is a powerful tool for characterizing strain; however, the lack of Raman coefficient makes it difficult for accurate determination of strain in GeSn alloys. Here, we have investigated the Raman-strain function of Ge1-xSnx along <1 0 0> and <1 1 0> directions. GeSn nanomembranes (NMs) with different Sn compositions are transfer-printed on polyethylene terephthalate (PET) substrates. External strain is introduced by bending fixtures with different radii, leading to uniaxial tensile strain up to 0.44%. Strain analysis of flexible GeSn NMs bent along <1 0 0> and <1 1 0> directions are performed by Raman spectroscopy. The linear coefficients of Raman-strain for Ge0.96Sn0.04 are measured to be −1.81 and −2.60 cm-1, while those of Ge0.94Sn0.06 are decreased to be −2.69 and −3.82 cm-1 along <1 0 0> and <1 1 0> directions, respectively. As a result, the experimental ratio of linear coefficient (ROLC) of Ge, Ge0.96Sn0.04 and Ge0.94Sn0.06 are 1.34, 1.44 and 1.42, which agree well with theoretical ROLC values calculated by elastic compliances and phonon deformation potentials (PDPs). In addition, the compositional dependence of PDPs is analyzed qualitatively. These fundamental parameters are important in designing high performance strained GeSn electronic and photonic devices. |
| first_indexed | 2024-10-01T07:46:01Z |
| format | Journal Article |
| id | ntu-10356/156824 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:46:01Z |
| publishDate | 2022 |
| record_format | dspace |
| spelling | ntu-10356/1568242022-04-26T00:54:45Z Raman scattering study of GeSn under <1 0 0> and <1 1 0> uniaxial stress An, Shu Tai, Yeh-Chen Lee, Kuo-Chih Shin, Sang-Ho Cheng, H. H. Chang, Guo-En Kim, Munho School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering::Semiconductors GeSn Strain Nanomembranes The application of strain into GeSn alloys can effectively modulate the band structures, thus creating novel electronic and photonic devices. Raman spectroscopy is a powerful tool for characterizing strain; however, the lack of Raman coefficient makes it difficult for accurate determination of strain in GeSn alloys. Here, we have investigated the Raman-strain function of Ge1-xSnx along <1 0 0> and <1 1 0> directions. GeSn nanomembranes (NMs) with different Sn compositions are transfer-printed on polyethylene terephthalate (PET) substrates. External strain is introduced by bending fixtures with different radii, leading to uniaxial tensile strain up to 0.44%. Strain analysis of flexible GeSn NMs bent along <1 0 0> and <1 1 0> directions are performed by Raman spectroscopy. The linear coefficients of Raman-strain for Ge0.96Sn0.04 are measured to be −1.81 and −2.60 cm-1, while those of Ge0.94Sn0.06 are decreased to be −2.69 and −3.82 cm-1 along <1 0 0> and <1 1 0> directions, respectively. As a result, the experimental ratio of linear coefficient (ROLC) of Ge, Ge0.96Sn0.04 and Ge0.94Sn0.06 are 1.34, 1.44 and 1.42, which agree well with theoretical ROLC values calculated by elastic compliances and phonon deformation potentials (PDPs). In addition, the compositional dependence of PDPs is analyzed qualitatively. These fundamental parameters are important in designing high performance strained GeSn electronic and photonic devices. Agency for Science, Technology and Research (A*STAR) Submitted/Accepted version The work at NTU was supported by A∗STAR, Singapore, Advanced Manufacturing and Engineering (AME) Young Individual Research Grant (YIRG) under Project A2084c0066. The work at CCU was supported by Ministry of Science and Technology of Taiwan under Project no. MOST 109-2636-E-194-002. 2022-04-26T00:54:45Z 2022-04-26T00:54:45Z 2021 Journal Article An, S., Tai, Y., Lee, K., Shin, S., Cheng, H. H., Chang, G. & Kim, M. (2021). Raman scattering study of GeSn under <1 0 0> and <1 1 0> uniaxial stress. Nanotechnology, 32(35), 355704-. https://dx.doi.org/10.1088/1361-6528/ac03d7 0957-4484 https://hdl.handle.net/10356/156824 10.1088/1361-6528/ac03d7 35 32 355704 en A2084c0066 Nanotechnology © 2021 IOP Publishing Ltd. All rights reserved. This is an author-created, un-copyedited version of an article accepted for publication in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The definitive publisher authenticated version is available online at https://doi.org/10.1088/1361-6528/ac03d7. application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering::Semiconductors GeSn Strain Nanomembranes An, Shu Tai, Yeh-Chen Lee, Kuo-Chih Shin, Sang-Ho Cheng, H. H. Chang, Guo-En Kim, Munho Raman scattering study of GeSn under <1 0 0> and <1 1 0> uniaxial stress |
| title | Raman scattering study of GeSn under <1 0 0> and <1 1 0> uniaxial stress |
| title_full | Raman scattering study of GeSn under <1 0 0> and <1 1 0> uniaxial stress |
| title_fullStr | Raman scattering study of GeSn under <1 0 0> and <1 1 0> uniaxial stress |
| title_full_unstemmed | Raman scattering study of GeSn under <1 0 0> and <1 1 0> uniaxial stress |
| title_short | Raman scattering study of GeSn under <1 0 0> and <1 1 0> uniaxial stress |
| title_sort | raman scattering study of gesn under 1 0 0 and 1 1 0 uniaxial stress |
| topic | Engineering::Electrical and electronic engineering::Semiconductors GeSn Strain Nanomembranes |
| url | https://hdl.handle.net/10356/156824 |
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