A heavily doped germanium pyramid array for tunable optical antireflection in the broadband mid-infrared range
In this work, we report the heavily doped germanium (Ge) inverted pyramid array as a suitable candidate for tunable antireflection in mid-infrared (MIR) range. Inverted Ge pyramid structures are formed by the metal-assisted chemical etching process. The heavy doping profile in a box shape is obtaine...
| Main Authors: | , , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2022
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/156827 |
| _version_ | 1811676651691442176 |
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| author | Son, Bongkwon Shin, Sang-Ho Jin, Yuhao Liao, Yikai Zhao, Zhi-Jun Jeong, Jun-Ho Wang, Qi Jie Wang, Xincai Tan, Chuan Seng Kim, Munho |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Son, Bongkwon Shin, Sang-Ho Jin, Yuhao Liao, Yikai Zhao, Zhi-Jun Jeong, Jun-Ho Wang, Qi Jie Wang, Xincai Tan, Chuan Seng Kim, Munho |
| author_sort | Son, Bongkwon |
| collection | NTU |
| description | In this work, we report the heavily doped germanium (Ge) inverted pyramid array as a suitable candidate for tunable antireflection in mid-infrared (MIR) range. Inverted Ge pyramid structures are formed by the metal-assisted chemical etching process. The heavy doping profile in a box shape is obtained via the KrF laser annealing process. The inverted pyramid serves as an effective antireflective surface structure, while the heavy doping layer acts as the high reflector, resulting from the modulated permittivity of Ge. It is observed that the reflectance of the inverted pyramid array made on undoped Ge is suppressed. On the contrary, the reflectance of the pyramids after doping is increased in the wavelength range larger than 15 μm. The reflectance is consistent in the wavelength range smaller than 7 μm. A systematic study reveals that the doping concentration and depth are important parameters determining the ability to modulate the reflection spectra. The proposed heavily doped inverted Ge pyramid array paves the way toward a tunable and complementary metal-oxide-semiconductor-compatible antireflection structure in the MIR range. |
| first_indexed | 2024-10-01T02:24:52Z |
| format | Journal Article |
| id | ntu-10356/156827 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:24:52Z |
| publishDate | 2022 |
| record_format | dspace |
| spelling | ntu-10356/1568272022-04-26T01:57:18Z A heavily doped germanium pyramid array for tunable optical antireflection in the broadband mid-infrared range Son, Bongkwon Shin, Sang-Ho Jin, Yuhao Liao, Yikai Zhao, Zhi-Jun Jeong, Jun-Ho Wang, Qi Jie Wang, Xincai Tan, Chuan Seng Kim, Munho School of Electrical and Electronic Engineering Singapore-MIT Alliance for Research and Technology (SMART) Singapore Institute of Manufacturing Technology Engineering::Electrical and electronic engineering::Semiconductors Silicon Germanium In this work, we report the heavily doped germanium (Ge) inverted pyramid array as a suitable candidate for tunable antireflection in mid-infrared (MIR) range. Inverted Ge pyramid structures are formed by the metal-assisted chemical etching process. The heavy doping profile in a box shape is obtained via the KrF laser annealing process. The inverted pyramid serves as an effective antireflective surface structure, while the heavy doping layer acts as the high reflector, resulting from the modulated permittivity of Ge. It is observed that the reflectance of the inverted pyramid array made on undoped Ge is suppressed. On the contrary, the reflectance of the pyramids after doping is increased in the wavelength range larger than 15 μm. The reflectance is consistent in the wavelength range smaller than 7 μm. A systematic study reveals that the doping concentration and depth are important parameters determining the ability to modulate the reflection spectra. The proposed heavily doped inverted Ge pyramid array paves the way toward a tunable and complementary metal-oxide-semiconductor-compatible antireflection structure in the MIR range. Agency for Science, Technology and Research (A*STAR) Ministry of Education (MOE) National Research Foundation (NRF) Published version This work was supported by the National Research Foundation, Singapore, under its Competitive Research Program (CRP Award NRF-CRP19-2017-01), A*STAR Programmatic Funds (A18A7b0058), AME IRG and YIRG grants (A20E5c0095 and A2084c0066), Ministry of Education AcRF Tier 1 (2021-T1-002-031 (RG112/21)), and Ministry of Education AcRF Tier 2 (T2EP50120-0003 and T2EP50121-0001 (MOE-00180-01)). The authors acknowledge the support of the Nanyang NanoFabrication Centre (N2FC). 2022-04-26T01:57:18Z 2022-04-26T01:57:18Z 2022 Journal Article Son, B., Shin, S., Jin, Y., Liao, Y., Zhao, Z., Jeong, J., Wang, Q. J., Wang, X., Tan, C. S. & Kim, M. (2022). A heavily doped germanium pyramid array for tunable optical antireflection in the broadband mid-infrared range. Journal of Materials Chemistry C, 10(15), 5797-5804. https://dx.doi.org/10.1039/D2TC00141A 2050-7526 https://hdl.handle.net/10356/156827 10.1039/D2TC00141A 15 10 5797 5804 en NRF-CRP19-2017-01 A18A7b0058 A20E5c0095 A2084c0066 2021-T1-002-031 (RG112/21) T2EP50120-0003 T2EP50121-0001 (MOE-00180-01) M4082289.040 Journal of Materials Chemistry C © 2022 The Royal Society of Chemistry. This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence. application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering::Semiconductors Silicon Germanium Son, Bongkwon Shin, Sang-Ho Jin, Yuhao Liao, Yikai Zhao, Zhi-Jun Jeong, Jun-Ho Wang, Qi Jie Wang, Xincai Tan, Chuan Seng Kim, Munho A heavily doped germanium pyramid array for tunable optical antireflection in the broadband mid-infrared range |
| title | A heavily doped germanium pyramid array for tunable optical antireflection in the broadband mid-infrared range |
| title_full | A heavily doped germanium pyramid array for tunable optical antireflection in the broadband mid-infrared range |
| title_fullStr | A heavily doped germanium pyramid array for tunable optical antireflection in the broadband mid-infrared range |
| title_full_unstemmed | A heavily doped germanium pyramid array for tunable optical antireflection in the broadband mid-infrared range |
| title_short | A heavily doped germanium pyramid array for tunable optical antireflection in the broadband mid-infrared range |
| title_sort | heavily doped germanium pyramid array for tunable optical antireflection in the broadband mid infrared range |
| topic | Engineering::Electrical and electronic engineering::Semiconductors Silicon Germanium |
| url | https://hdl.handle.net/10356/156827 |
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