Ultraviolet antireflective porous nanoscale periodic hole array of 4H-SiC by photon-enhanced metal-assisted chemical etching
Benefitting from the outstanding stability and suitable bandgap energy, silicon carbide (SiC) shows promising applications especially for ultraviolet light detection in harsh environments. Traditionally, 4H-SiC surface antireflection textures which boost light harvesting have been realized by plasma...
| Main Authors: | , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2022
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/156829 |