Transferable single-layer GeSn nanomembrane resonant-cavity-enhanced photodetectors for 2 μm band optical communication and multi-spectral short-wave infrared sensing
Semiconductor nanomembranes (NMs) have emerged as an attractive nanomaterial for advanced electronic and photonic devices with attractive features such as transferability and flexibility, enabling heterogeneous integration of multi-functional components. Here, we demonstrate the transferable sing...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2022
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/156843 |
| _version_ | 1811685562750337024 |
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| author | Chen, Qimiao Wu, Shaoteng Zhang, Lin Zhou, Hao Fan, Weijun Tan, Chuan Seng |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Chen, Qimiao Wu, Shaoteng Zhang, Lin Zhou, Hao Fan, Weijun Tan, Chuan Seng |
| author_sort | Chen, Qimiao |
| collection | NTU |
| description | Semiconductor nanomembranes (NMs) have emerged as an attractive nanomaterial for advanced
electronic and photonic devices with attractive features such as transferability and flexibility, enabling
heterogeneous integration of multi-functional components. Here, we demonstrate the transferable
single-layer GeSn NM resonant-cavity-enhanced photodetectors for 2 μm optical communication and
multi-spectral short-wave infrared sensing/imaging applications. The single-layer strain-free GeSn
NMs with Sn concentration of 10% are released from a high-quality GeSn-on-insulator (GSOI) substrate
with the defective interface regions removed. By transferring the GeSn NMs onto a predesigned
distribution Bragg reflector (DBR)/Si substrate, a vertical microcavity is integrated to the device to
enhance the light-matter interaction in the GeSn NM. With the integrated cavity and high-quality
single-layer GeSn NM, a record responsivity of 0.51 A/W at 2 μm wavelength at room temperature
is obtained, which is more than two orders of magnitude higher than the reported values of
the multiple-layer GeSn membrane photodetectors without cavities. The potential of the device for
multi-spectral photodetection is demonstrated by tuning the responsivity spectrum with different NM
thicknesses. Theoretical simulations are utilized to analyze and verify the mechanisms of responsivity
enhancement. The approach can be applied to other GeSn-NM-based active devices, such as
electro-absorption modulators or light emitters and present a new pathway towards heterogeneous
group-IV photonic integrated circuits with miniaturized devices. |
| first_indexed | 2024-10-01T04:46:30Z |
| format | Journal Article |
| id | ntu-10356/156843 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:46:30Z |
| publishDate | 2022 |
| record_format | dspace |
| spelling | ntu-10356/1568432022-04-27T05:16:00Z Transferable single-layer GeSn nanomembrane resonant-cavity-enhanced photodetectors for 2 μm band optical communication and multi-spectral short-wave infrared sensing Chen, Qimiao Wu, Shaoteng Zhang, Lin Zhou, Hao Fan, Weijun Tan, Chuan Seng School of Electrical and Electronic Engineering Institute of Microelectronics, A*STAR Engineering::Electrical and electronic engineering Germanium-Tin Photodetector Nanomembrane Semiconductor nanomembranes (NMs) have emerged as an attractive nanomaterial for advanced electronic and photonic devices with attractive features such as transferability and flexibility, enabling heterogeneous integration of multi-functional components. Here, we demonstrate the transferable single-layer GeSn NM resonant-cavity-enhanced photodetectors for 2 μm optical communication and multi-spectral short-wave infrared sensing/imaging applications. The single-layer strain-free GeSn NMs with Sn concentration of 10% are released from a high-quality GeSn-on-insulator (GSOI) substrate with the defective interface regions removed. By transferring the GeSn NMs onto a predesigned distribution Bragg reflector (DBR)/Si substrate, a vertical microcavity is integrated to the device to enhance the light-matter interaction in the GeSn NM. With the integrated cavity and high-quality single-layer GeSn NM, a record responsivity of 0.51 A/W at 2 μm wavelength at room temperature is obtained, which is more than two orders of magnitude higher than the reported values of the multiple-layer GeSn membrane photodetectors without cavities. The potential of the device for multi-spectral photodetection is demonstrated by tuning the responsivity spectrum with different NM thicknesses. Theoretical simulations are utilized to analyze and verify the mechanisms of responsivity enhancement. The approach can be applied to other GeSn-NM-based active devices, such as electro-absorption modulators or light emitters and present a new pathway towards heterogeneous group-IV photonic integrated circuits with miniaturized devices. Ministry of Education (MOE) National Research Foundation (NRF) Submitted/Accepted version This work was supported by National Research Foundation Singapore (NRF–CRP19–2017–01), Ministry of Education AcRF Tier 2 (T2EP50121-0001 (MOE-000180-01)) and Ministry of Education AcRF Tier 1 (2021-T1-002-031 (RG112/21)). 2022-04-27T05:12:30Z 2022-04-27T05:12:30Z 2022 Journal Article Chen, Q., Wu, S., Zhang, L., Zhou, H., Fan, W. & Tan, C. S. (2022). Transferable single-layer GeSn nanomembrane resonant-cavity-enhanced photodetectors for 2 μm band optical communication and multi-spectral short-wave infrared sensing. Nanoscale. https://dx.doi.org/10.1039/D1NR07293E 2040-3364 https://hdl.handle.net/10356/156843 10.1039/D1NR07293E en NRF-CRP19- 2017-01 T2EP50121-0001 (MOE-000180-01) 2021-T1-002-031 (RG112/21) Nanoscale © 2022 Royal Society of Chemistry. All rights reserved. This paper was published in Nanoscale and is made available with permission of Royal Society of Chemistry application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering Germanium-Tin Photodetector Nanomembrane Chen, Qimiao Wu, Shaoteng Zhang, Lin Zhou, Hao Fan, Weijun Tan, Chuan Seng Transferable single-layer GeSn nanomembrane resonant-cavity-enhanced photodetectors for 2 μm band optical communication and multi-spectral short-wave infrared sensing |
| title | Transferable single-layer GeSn nanomembrane resonant-cavity-enhanced photodetectors for 2 μm band optical communication and multi-spectral short-wave infrared sensing |
| title_full | Transferable single-layer GeSn nanomembrane resonant-cavity-enhanced photodetectors for 2 μm band optical communication and multi-spectral short-wave infrared sensing |
| title_fullStr | Transferable single-layer GeSn nanomembrane resonant-cavity-enhanced photodetectors for 2 μm band optical communication and multi-spectral short-wave infrared sensing |
| title_full_unstemmed | Transferable single-layer GeSn nanomembrane resonant-cavity-enhanced photodetectors for 2 μm band optical communication and multi-spectral short-wave infrared sensing |
| title_short | Transferable single-layer GeSn nanomembrane resonant-cavity-enhanced photodetectors for 2 μm band optical communication and multi-spectral short-wave infrared sensing |
| title_sort | transferable single layer gesn nanomembrane resonant cavity enhanced photodetectors for 2 μm band optical communication and multi spectral short wave infrared sensing |
| topic | Engineering::Electrical and electronic engineering Germanium-Tin Photodetector Nanomembrane |
| url | https://hdl.handle.net/10356/156843 |
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